1
Ravi Laxman
Ziyun Wang, Chongying Xu, Ravi K Laxman, Thomas H Baum, Bryan Hendrix, Jeffrey Roeder: Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride. Advanced Technology Materials, Steven J Hultquist, Intellectual Property Technology Law, Maggie Chappuis, May 12, 2009: US07531679 (26 worldwide citation)

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon ...


2
Ravi Laxman
Ziyun Wang, Chongying Xu, Ravi K Laxman, Thomas H Baum, Bryan Hendrix, Jeffrey Roeder: COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS SUCH AS FILMS INCLUDING SILICON, SILICON NITRIDE, SILICON DIOXIDE AND/OR SILICON-OXYNITRIDE. ADVANCED TECHNOLOGY MATERIALS, July 12, 2012: US20120178267-A1

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon ...


3
Ravi Laxman
Ziyun Wang, Chongying Xu, Ravi K Laxman, Thomas H Baum, Bryan Hendrix, Jeffrey Roeder: Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride. Advanced Technology Materials, May 20, 2004: US20040096582-A1

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon ...


4
Ravi Laxman
Ziyun Wang, Chongying Xu, Ravi K Laxman, Thomas H Baum, Bryan Hendrix, Jeffrey Roeder: Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride. Advanced Technology Materials, Intellectual Property Technology Law, November 12, 2009: US20090281344-A1

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon ...


5
Ravi Laxman
Ziyun WANG, Chongying Xu, Ravi K Laxman, Thomas H Baum, Bryan Hendrix, Jeffrey Roeder: Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride. Advanced Technology Materials, Intellectual Property Technology Law, November 11, 2010: US20100285663-A1

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon ...


6
Frank Hintermaier, Bryan Hendrix, Jeff Roeder, Peter Van Buskirk, Thomas H Baum: Method for the selective deposition of bismuth based ferroelectric thin films by chemical vapor deposition. Advanced Technology Materials, Infineon Technologies Corporation, Robert A Whitman, Dexter K Chin, September 19, 2000: US06120846 (48 worldwide citation)

A method is described for the selective deposition of bismuth based ferroelectric films by selective chemical vapor deposition on a substrate. Selectivity in the deposition process is attained by selection of substrate-precursor combinations which assure high bismuth deposition efficiency in certain ...


7
Peter Van Buskirk, Jeff Roeder, Frank Hintermaier, Bryan Hendrix, Thomas H Baum: Method for nucleation controlled chemical vapor deposition of metal oxide ferroelectric thin films. Advanced Technology Materials, Infineon Technolgies Corporation, Oliver A Zitzmann, Dexter Chin, January 4, 2000: US06010744 (25 worldwide citation)

A method is described for the nucleation controlled deposition of ferroelectric thin films by chemical vapor deposition in a novel processing sequence wherein a higher density of bismuth nucleation sites is achieved either by the use of a substrate member which has been treated in a manner to yield ...


8
Ziyun Wang, Chongying Xu, Thomas H Baum, Bryan Hendrix, Jeffrey F Roeder: Composition and method for low temperature deposition of silicon-containing films. Advanced Technology Materials, Kelly K Reynolds, Steven J Hultquist, Intellectual Property Technology Law, November 4, 2008: US07446217 (17 worldwide citation)

This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative c ...


9
Ziyun Wang, Chongying Xu, Bryan Hendrix, Jeffrey Roeder, Tianniu Chen, Thomas H Baum: Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films. Advanced Technology Materials, Steven J Hultquist, Intellectual Property Technology Law, Maggie Chappuis, October 13, 2009: US07601860 (7 worldwide citation)

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° ...


10
Bryan Hendrix: Method and apparatus for drying poultry manure. Rose Acre Farms, Woodard Emhardt Naughton Moriarty & McNett, April 14, 1998: US05737850 (4 worldwide citation)

A chicken manure drying system is placed in a hen house. A platform of the system is disposed underneath a plurality of chicken cages. As chicken manure drops from the chicken cages, it collects on the platform. Drying fans of the system are disposed adjacent to the platform. The drying fans provide ...



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