1
Tue Nguyen, Chien Hsiung Peng, Bruce Dale Ulrich: Hard mask method for transferring a multi-level photoresist pattern. Sharp Microelectronics Technology, Sharp Kabushiki Kaisha, Gerald Maliszewski, David C Ripma, October 13, 1998: US05821169 (49 worldwide citation)

A method is provided for forming intermediate levels in an integrated circuit dielectric during a damascene process using a hard mask layer to transfer the pattern of a photoresist mask having at least one intermediate thickness. The dielectric is covered with a hard mask layer, and the hard mask la ...


2
Bruce Dale Ulrich: Multiple exposure masking system for forming multi-level resist profiles. Sharp Microelectronics Technology, Sharp Kabushiki Kaisha, David C Ripma, Gerald W Maliszewski, May 19, 1998: US05753417 (38 worldwide citation)

A method is provided for forming multi-level profiles from a photoresist mask. The method includes exposing selected areas of a photoresist layer to two or more different patterns of light at different light dosage levels. For example, one pattern will be exposed to a relatively low dose of light, o ...


3
Tue Nguyen, Bruce Dale Ulrich, David Russell Evans: Multi-level reticle system and method for forming multi-level resist profiles. Sharp Laboratories of America, Sharp Kabushiki Kaisha, Gerald Maliszewski, David C Ripma, August 10, 1999: US05936707 (30 worldwide citation)

A method is providing for making a multi-level reticle which transmits a plurality of incident light intensities, which in turn, are used to form a plurality of thicknesses in a photoresist profile. A partially transmitting film, used as one of the layers of the reticle, is able to provide an interm ...


4
Bruce Dale Ulrich, Tue Nguyen, Masato Kobayashi: Low temperature system and method for CVD copper removal. Sharp Microelectronics Technology, Sharp Kabushiki Kaisha, Gerald Maliszewski, David C Ripma, April 27, 1999: US05897379 (24 worldwide citation)

A method of using diluted nitric acid and an edge bead removal tool to remove copper from the perimeter of a semiconductor wafer is provided. In one embodiment, sensitive areas of the wafer are covered with photoresist, and the wafer perimeter cleared of photoresist, before the acid is applied. In a ...


5
Tue Nguyen, Bruce Dale Ulrich, David Russell Evans: Multi-level photoresist profile method. Sharp Kabushiki Kaisha, Sharp Microelectronics Technology, Gerald Maliszewski, David C Ripma, May 25, 1999: US05906910 (21 worldwide citation)

A method is providing for making a multi-level reticle which transmits a plurality of incident light intensities, which in turn, are used to form a plurality of thicknesses in a photoresist profile. A partially transmitting film, used as one of the layers of the reticle, is able to provide an interm ...


6
Tue Nguyen, Bruce Dale Ulrich, David Russell Evans: Method for forming a multi-level reticle. Sharp Microeletronics Technology, Sharp Kabushiki Kaisha, Gerald Maliszewski, David C Ripma, June 22, 1999: US05914202 (14 worldwide citation)

A method is providing for making a multi-level reticle which transmits a plurality of incident light intensities, which in turn, are used to form a plurality of thicknesses in a photoresist profile. A partially transmitting film, used as one of the layers of the reticle, is able to provide an interm ...


7
Tue Nguyen, Sheng Teng Hsu, Jer shen Maa, Bruce Dale Ulrich, Chien Hsiung Peng: Method for transferring a multi-level photoresist pattern. Sharp Laboratories of America, David C Ripma, Mathew D Rabdau, March 28, 2000: US06043164 (14 worldwide citation)

A method is provided for forming an intermediate level in an integrated circuit dielectric during a damascene process using a photoresist mask having an intermediate thickness. The method forms an interconnect to a first depth in the dielectric through an opening in the photoresist pattern. The phot ...


8
Bruce Dale Ulrich, Tue Nguyen, Masato Kobayashi: Semiconductor wafer with removed CVD copper. Sharp Laboratories of America, Sharp Kabushiki Kaisha, David C Ripma, February 1, 2000: US06020639 (14 worldwide citation)

A method of using diluted nitric acid and an edge bead removal tool to remove copper from the perimeter of a semiconductor wafer is provided. In one embodiment, sensitive areas of the wafer are covered with photoresist, and the wafer perimeter cleared of photoresist, before the acid is applied. In a ...


9
Sheng Teng Hsu, Douglas James Tweet, Bruce Dale Ulrich, Hong Ying: Method of fabricating high performance SiGe heterojunction bipolar transistor BiCMOS on a silicon-on-insulator substrate. Sharp Laboratories of America, David C Ripma, Matthew D Rabdau, Scott C Krieger, April 29, 2003: US06555874 (10 worldwide citation)

A semiconductor structure includes, on a SOI substrate, a CMOS formed on the substrate; and a SiGe HBT formed on the substrate. A method of fabricating a semiconductor structure includes preparing a SOI substrate having plural active regions thereon; forming a CMOS on the SOI substrate in a first ac ...


10
Bruce Dale Ulrich, Gerald William Maliszewski: Method of making a multi-level reticle using bi-level photoresist, including a phase-shifted multi-level reticle. Sharp Laboratories of America, David C Ripma, Matthew D Rabdau, Scott C Krieger, August 20, 2002: US06436587 (10 worldwide citation)

A method of forming a reticle includes providing a reticle blank having a quartz layer, an attenuated phase shift layer, and a metal layer; covering the reticle blank with photoresist; patterning the photoresist into multiple levels; and etching the reticle blank according to the multi-level photore ...