1
Trung T Doan, D Mark Durcan, Brent D Gilgen: Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same. Micron Technology, Trask Britt, November 21, 2000: US06150253 (265 worldwide citation)

An ovonic phase-change semiconductor memory device having a reduced area of contact between electrodes of chalcogenide memories, and methods of forming the same. Such memory devices are formed by forming a tip protruding from a lower surface of a lower electrode element. An insulative material is ap ...


2
Brent D Gilgen, Tyler A Lowrey, Joseph J Karniewicz, Anthony M McQueen: Reduced-mask, split-polysilicon CMOS process, incorporating stacked-capacitor cells, for fabricating multi-megabit dynamic random access memories. Micron Technology, Angus C Fox III, July 28, 1992: US05134085 (232 worldwide citation)

This invention constitutes a 10-12 mask, split-polysilicon process for fabricating dynamic random access memories of the stacked capacitor type for the one-megabit generation and beyond. The process flow is characterized: reduced mask count due to the elimination of the N+ and p+ source-drain maskin ...


3
Trung T Doan, D Mark Durcan, Brent D Gilgen: Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same. Micron Technology, TraskBritt, July 23, 2002: US06423621 (226 worldwide citation)

An ovonic phase-change semiconductor memory device having a reduced area of contact between electrodes of chalcogenide memories, and methods of forming the same. Such memory devices are formed by forming a tip protruding from a lower surface of a lower electrode element An insulative material is app ...


4
Trung T Doan, D Mark Durcan, Brent D Gilgen: Controllable ovanic phase-change semiconductor memory device. Micron Technology, TraskBritt, May 24, 2005: US06897467 (48 worldwide citation)

An ovonic phase-change semiconductor memory device having a reduced area of contact between electrodes of chalcogenide memories, and methods of forming the same, are disclosed. Such memory devices are formed by forming a tip protruding from a lower surface of a lower electrode element. An insulative ...


5
Trung T Doan, D Mark Durcan, Brent D Gilgen: Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same. Micron Technology, TraskBritt, December 11, 2001: US06329666 (29 worldwide citation)

An ovonic phase-change semiconductor memory device having a reduced area of contact between electrodes of chalcogenide memories, and methods of forming the same. Such memory devices are formed by forming a tip protruding from a lower surface of a lower electrode element. An insulative material is ap ...


6
Trung T Doan, D Mark Durcan, Brent D Gilgen: Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same. Micron Technology, TraskBritt, September 25, 2001: US06294452 (16 worldwide citation)

An ovonic phase-change semiconductor memory device having a reduced area of contact between electrodes of chalcogenide memories, and methods of forming the same. Such memory devices are formed by forming a tip protruding from a lower surface of a lower electrode element. An insulative material is ap ...


7
Trung T Doan, D Mark Durcan, Brent D Gilgen: Controlable ovonic phase-change semiconductor memory device. Micron Technology, TraskBritt, August 24, 2004: US06781145 (10 worldwide citation)

An ovonic phase-change semiconductor memory device having a reduced area of contact between electrodes of chalcogenide memories, and methods of forming the same are disclosed. Such memory devices are formed by forming a tip protruding from a lower surface of a lower electrode element. An insulative ...


8
Brent D Gilgen, Paul Grisham, Werner Juengling, Richard H Lane: Methods of providing electrical isolation and semiconductor structures including same. Micron Technology, TraskBritt, April 3, 2012: US08148775 (6 worldwide citation)

Methods of isolating gates in a semiconductor structure. In one embodiment, isolation is achieved using a spacer material in combination with fins having substantially vertical sidewalls. In another embodiment, etch characteristics of various materials utilized in fabrication of the semiconductor st ...


9
Belford T Coursey, Brent D Gilgen: Methods for preventing cross-linking between multiple resists and patterning multiple resists. Micron Technology, TraskBritt, May 17, 2005: US06893958 (2 worldwide citation)

The present invention prevents cross-linking between multiple resists that are used in the fabrication of a semiconductor device. In order to prevent resists in close proximity or contact with one another from cross-linking, a non-reactive separation layer is disposed between the resists. The separa ...


10
Trung T Doan, D Mark Durcan, Brent D Gilgen: Controllable ovonic phase-change semiconductor memory device and methods of programming the same. Round Rock Research, Lerner David Littenberg Krumholz & Mentlik, May 3, 2011: US07935950 (1 worldwide citation)

An ovonic phase-change semiconductor memory device having a reduced area of contact between electrodes of chalcogenide memories, and methods of programming the same are disclosed. Such memory devices include a lower electrode including non-parallel sidewalls. An insulative material overlies the lowe ...