1
Xavier Baie
Brent A Anderson, Xavier Baie, Randy W Mann, Edward J Nowak, Jed H Rankin: High mobility transistors in SOI and method for forming. International Business Machines Corporation, Mark F Chadurjian, Schmeiser Olsen & Watts, September 23, 2003: US06624478 (25 worldwide citation)

The present invention provides a device design and method for forming Field Effect Transistors (FETs) that have improved performance without negative impacts to device density. The present invention forms high-gain p-channel transistors by forming them on silicon islands where hole mobility has been ...


2
Xavier Baie
Brent A Anderson, Xavier Baie, Randy W Mann, Edward J Nowak, Jed H Rankin: High mobility transistors in SOI and method for forming. International Business Machines Corporation, Schmeiser Olson & Watts, William D Sabo, November 8, 2005: US06962838 (4 worldwide citation)

The present invention provides a device design and method for forming Field Effect Transistors (FETs) that have improved performance without negative impacts to device density. The present invention forms high-gain p-channel transistors by forming them on silicon islands where hole mobility has been ...


3
Xavier Baie
Brent A Anderson, Xavier Baie, Randy W Mann, Edward J Nowak, Jed H Rankin: High mobility transistors in SOI and method for forming. Schmeiser Olsen Watts, December 18, 2003: US20030232467-A1

The present invention provides a device design and method for forming Field Effect Transistors (FETs) that have improved performance without negative impacts to device density. The present invention forms high-gain p-channel transistors by forming them on silicon islands where hole mobility has been ...


4
Xavier Baie
Brent A Anderson, Xavier Baie, Randy W Mann, Edward J Nowak, Jed H Rankin: High mobility transistors in soi and method for forming. International Business Machines Corporation, Jack P Friedman, Schmeiser Olsen & Watts, July 31, 2003: US20030141548-A1

The present invention provides a device design and method for forming Field Effect Transistors (FETs) that have improved performance without negative impacts to device density. The present invention forms high-gain p-channel transistors by forming them on silicon islands where hole mobility has been ...


5
Brent A Anderson, Matthew J Breitwisch, Edward J Nowak: Substrate backgate for trigate FET. International Business Machines Corporation, Gibb & Rahman, August 12, 2008: US07411252 (136 worldwide citation)

Disclosed is a tri-gate field effect transistor with a back gate and the associated methods of forming the transistor. Specifically, a back gate is incorporated into a lower portion of a fin. A tri-gate structure is formed on the fin and is electrically isolated from the back gate. The back gate can ...


6
Brent A Anderson, William F Clark Jr, Edward J Nowak: Four-bit FinFET NVRAM memory device. International Business Machines Corporation, Schmeiser Olsen & Watts, William D Sabo, August 15, 2006: US07091551 (114 worldwide citation)

A four-bit FinFET memory cell, method of fabricating four-bit FinFET memory cell and an NVRAM formed of four-bit FINFET memory cells. The four-bit memory cell including two charge storage regions in opposite ends of a dielectric layer on a first sidewall of a fin of a FinFET and two additional charg ...


7
Brent A Anderson, Edward J Nowak: Multiple-gate device with floating back gate. International Business Machines Corporation, Gibb & Rahman, William D Sabo Esq, August 21, 2007: US07259420 (103 worldwide citation)

Disclosed is a multiple-gate transistor that includes a channel region and source and drain regions at ends of the channel region. A gate oxide is positioned between a logic gate and the channel region and a first insulator is formed between a floating gate and the channel region. The first insulato ...


8
Brent A Anderson, Andres Bryant, Edward J Nowak: FinFET SRAM cell with chevron FinFET logic. International Business Machines Corporation, Schmeiser Olsen & Watts, William D Sabo, March 15, 2005: US06867460 (99 worldwide citation)

An electronic device, and SRAM and a method of forming the electronic device and SRAM. The semiconductor device including: a pass gate transistor having a fin body having opposing sidewalls aligned in a first direction and having a first majority carrier mobility and a gate adjacent to both sidewall ...


9
Brent A Anderson, MeiKei Leong, Edward J Nowak: High mobility plane CMOS SOI. International Business Machines Corporation, Gibb I P Law Firm, William D Sabo Esq, February 14, 2006: US06998684 (83 worldwide citation)

Disclosed is an integrated circuit structure that has a substrate having at least two types of crystalline orientations. First-type transistors (e.g., NFETs) are formed on first portions of the substrate having a first type of crystalline orientation, and second-type transistors (e.g., PFETs) are fo ...


10
Brent A Anderson, Andres Bryant, John J Ellis Monaghan, Edward J Nowak: Fin-type field effect transistor structure with merged source/drain silicide and method of forming the structure. International Business Machines Corporation, Gibb I P Law Firm, December 14, 2010: US07851865 (78 worldwide citation)

Disclosed herein are embodiments of a design structure of a multiple fin fin-type field effect transistor (i.e., a multiple fin dual-gate or tri-gate field effect transistor) in which the multiple fins are partially or completely merged by a highly conductive material (e.g., a metal silicide). Mergi ...