1
Seung Beom Baek, Bo Min Park, Young Ho Lee, Jong Chul Lee: Method for fabricating semiconductor device. SK Hynix, IP & T Group, December 30, 2014: US08921208

A method for fabricating a semiconductor device includes forming a first insulating layer in a first area of the semiconductor substrate, lowering a height of the semiconductor substrate in a second area and a height of the first insulating layer in the first area, selectively forming a sacrificial ...


2
Jong Han Shin, Bo Min Park: Semiconductor device with buried gate and method for fabricating the same. SK Hynix, IP & T Group, March 10, 2015: US08975173

A semiconductor device includes buried gates formed over a substrate, storage node contact plugs which are formed over the substrate and include a pillar pattern and a line pattern disposed over the pillar pattern, and a bit line structure which is formed over the substrate and isolates adjacent one ...


3
Sang Deok Kim, Bo Min Park: Method of forming isolation structure of semiconductor device. Hynix Semiconductor, Townsend And Townsend And Crew, August 23, 2007: US20070196997-A1

A method for forming an isolation structure of a semiconductor device includes forming an isolation trench on a semiconductor substrate. A first insulating layer is formed over the isolation trench and the substrate. A spin-on-dielectric (SOD) insulating layer is formed over the first insulation lay ...


4
Bo Min Park: Method of Forming Isolation Layer of Semiconductor Device. Hynix Semiconductor, Marshall Gerstein & Borun, July 2, 2009: US20090170280-A1

A method of forming isolation layers of a semiconductor device, comprising providing a semiconductor substrate in which a tunnel dielectric layer and a conductive layer are formed in active regions having two ends and trenches are formed in isolation regions; rounding both ends of each active region ...


5
Jong Han Shin, Bo Min Park: Semiconductor device with buried gate and method for fabricating the same. June 21, 2012: US20120153383-A1

A semiconductor device includes buried gates formed over a substrate, storage node contact plugs which are formed over the substrate and include a pillar pattern and a line pattern disposed over the pillar pattern, and a bit line structure which is formed over the substrate and isolates adjacent one ...



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