1
Suzanne R Abrams, John J Balsevich, Adrian J Cutler, Bo Lei, Patricia A Rose: Hyperabas: biologically active abscisic acid analogs with unsaturated carbon substituents at the 8-methyl or 9-methyl carbon atoms. National Research Council of Canada, J Wayne Anderson, December 21, 1999: US06004905 (15 worldwide citation)

The invention disclosed relates to a new class of abscisic acid (ABA) analogs of formula I ##STR1## wherein one of R.sub.1 is alkenyl, alkynyl, aryl, cycloalkenyl, other farther substituted carbon chain including deuterium containing residues, and carbon containing substituents with heteroatoms and ...


2
Jianmin Huang, Bo Lei, Jun Wan, Gerrit Jan Hemink, Steven T Sprouse, Dana Lee: Systems and methods for lower page writes. SanDisk Technologies, Davis Wright Tremaine, December 2, 2014: US08902652 (8 worldwide citation)

In a Multi Level Cell (MLC) memory array block in which lower pages are written first, before any upper pages, the lower page data is subject to an exclusive OR (XOR) operation so that if any lower page becomes uncorrectable by ECC (UECC) then the page can be recovered using XOR. Lower pages in such ...


3
Jun Wan, Feng Pan, Bo Lei: Word line coupling for deep program-verify, erase-verify and read. SanDisk Technologies, Vierra Magen Marcus, June 2, 2015: US09047970 (4 worldwide citation)

In a non-volatile storage system, a reduced voltage is provided on a selected word line during a sensing operation, using down coupling from one or more adjacent word lines. Voltages of one or more adjacent word lines of a selected word line are driven down while a voltage of the selected word line ...


4
Bo Lei, Guirong Liang, Anubhav Khandelwal, Jun Wan: Erase and programming techniques to reduce the widening of state distributions in non-volatile memories. SanDisk Technologies, Davis Wright Tremaine, April 9, 2013: US08416624 (3 worldwide citation)

Techniques are presented for use in memory devices to improve reliability and endurance by reducing the widening in state distributions, that occurs after multiple write/erase cycles. One set of techniques uses a pre-conditioning operation where a pulse series, which may include program and gentle e ...


5
Feng Pan, Tien Chien Kuo, Jun Wan, Bo Lei: Aggregating data latches for program level determination. SanDisk Technologies, Davis Wright Tremaine, May 27, 2014: US08737125 (3 worldwide citation)

In a nonvolatile memory array that stores randomized data, the program level—the number of states per cell stored in a population of memory cells—may be determined from the aggregated results of a single read step. A circuit for aggregating binary results of a read step includes parallel transistors ...


6
Bo Lei, Jun Wan, Feng Pan: Non-volatile storage with read process that reduces disturb. Sandisk Technologies, Vierra Magen Marcus, January 20, 2015: US08937835 (2 worldwide citation)

A apparatus and process for reading data from non-volatile storage includes applying a read compare signal to a selected data memory cell of a NAND string, applying a first set of one or more read pass voltages to unselected data memory cells at both ends of the NAND string and applying a second set ...


7
Feng Pan, Jun Wang, Shankar Guhados, Bo Lei: Charge pump based over-sampling ADC for current detection. SanDisk Technologies, Stoel Rives, November 7, 2017: US09810723 (1 worldwide citation)

Techniques are presented for determining current levels based on the behavior of a charge pump system while driving a load under regulation. While driving the load under regulation, the number of pump clocks during a set interval is counted. This can be compared to a reference that can be obtained, ...


8
Jianmin Huang, Bo Lei, Jun Wan, Gerrit Jan Hemink, Steven T Sprouse, Dana Lee: Systems and methods for lower page writes. SanDISK Technologies, Davis Wright Tremaine, May 31, 2016: US09355713 (1 worldwide citation)

In a Multi Level Cell (MLC) memory array block in which lower pages are written first, before any upper pages, the lower page data is subject to an exclusive OR (XOR) operation so that if any lower page becomes uncorrectable by ECC (UECC) then the page can be recovered using XOR. Lower pages in such ...


9
Gautam Dusija, Chris Avila, Jonathan Hsu, Neil Darragh, Bo Lei: Block refresh to adapt to new die trim settings. SanDisk Technologies, Brinks Gilson & Lione, March 7, 2017: US09589645 (1 worldwide citation)

Systems, apparatuses, and methods may be provided that adapt to trim set advancement. Trim set advancement may be a change in trim sets over time. A cell of a semiconductor memory may have a first charge level and be programmed with a first trim set. The cell may be reprogrammed by raising the first ...


10
Ian Egle, Regis C S H Leung Toung, Bo Lei, Tim Fat Tam, Tao Xin, Khashayar Karimian: Methods for the manufacture of quinolone carboxylic acids derivatives and intermediates thereof. Apotex, Nixon & Vanderhye P C, June 22, 1999: US05914401 (1 worldwide citation)

Novel process for the preparation of quinolone carboxylic acid derivatives of general formula I, and intermediates thereof as illustrated in Scheme 1 wherein the key intermediate is a compound of formula IX. ##STR1##