1
Valery M Dubin, Yosi Schacham Diamand, Bin Zhao, Prahalad K Vasudev, Chiu H Ting: Use of cobalt tungsten phosphide as a barrier material for copper metallization. Cornell Research Foundation, Sematech, Intel Corporation, William W Kidd, December 9, 1997: US05695810 (447 worldwide citation)

A technique for electrolessly depositing a CoWP barrier material on to copper and electrolessly depositing copper onto a CoWP barrier material to prevent copper diffusion when forming layers and/or structures on a semiconductor wafer.


2
Bin Zhao, Prahalad K Vasudev, Valery M Dubin, Yosef Shacham Diamand, Chiu H Ting: Selective electroless copper deposited interconnect plugs for ULSI applications. Sematech, Kidd & Booth, October 7, 1997: US05674787 (425 worldwide citation)

A method or utilizing electroless copper deposition to selectively form encapsulated copper plugs to connect conductive regions on a semiconductor. A via opening in an inter-level dielectric (ILD) provides a path for connecting two conductive regions separated by the ILD. Once the underlying metal l ...


3
Yosef Schacham Diamand, Valery M Dubin, Chiu H Ting, Bin Zhao, Prahalad K Vasudev, Melvin Desilva: Protected encapsulation of catalytic layer for electroless copper interconnect. Cornell Research Foundation, Intel Corporation, Sematech, October 20, 1998: US05824599 (305 worldwide citation)

A method for utilizing electroless copper deposition to form interconnects on a semiconductor. Once a via or a trench is formed in a dielectric layer, a titanium nitride (TiN) or tantalum (Ta) barrier layer is deposited. Then, a catalytic copper seed layer is conformally blanket deposited in vacuum ...


4
Valery M Dubin, Yosef Shacham Diamand, Chiu H Ting, Bin Zhao, Prahalad K Vasudev: Electroless CU deposition on a barrier layer by CU contact displacement for ULSI applications. Cornell Research Foundation, Intel Corporation, Sematech, April 6, 1999: US05891513 (269 worldwide citation)

A method of utilizing electroless copper deposition to form interconnects on a semiconductor wafer. Once a via or a trench is formed in a dielectric layer, a titanium nitride (TiN) or tantalum (Ta) barrier layer is blanket deposited. Then, a contact displacement technique is used to form a thin acti ...


5
Yosi Shacham Diamand, Valery M Dubin, Chiu H Ting, Bin Zhao, Prahalad K Vasudev: Electroless deposition equipment or apparatus and method of performing electroless deposition. Cornell Research Foundation, Sematech, Intel Corporation, November 3, 1998: US05830805 (181 worldwide citation)

An electroless deposition apparatus and a method of electroless deposition that uses a single process chamber for performing multiple processes by moving through the process chamber a variety of fluids one at a time in a sequential order.


6
Bin Zhao, Prahalad K Vasudev, Ronald S Horwath, Thomas E Seidel, Peter M Zeitzoff: Dual damascene interconnect structure using low dielectric constant material for an inter-level dielectric layer. March 14, 2000: US06037664 (141 worldwide citation)

A technique for fabricating a dual damascene interconnect structure using a low dielectric constant material as a dielectric layer or layers. A low dielectric constant (low-.epsilon.) dielectric material is used to form an inter-level dielectric (ILD) layer between metallization layers and in which ...


7
Min Zhu, Bin Zhao: Quality of service maintenance for distributed collaborative computing. WebEx Communications, Sidley Austin, Philip W Woo, Brown & Wood, May 20, 2003: US06567813 (127 worldwide citation)

A distributed collaborative computer system is provided that comprises a plurality of server computers interconnected via a high-speed link. Client computers can connect to any available server computer and start or join a conference hosted on either the server computer to which the client computer ...


8
Bin Zhao: Microelectronic air-gap structures and methods of forming the same. Newport Fab, Farjami & Farjami, January 21, 2003: US06509623 (125 worldwide citation)

An improved microelectronic structure is disclosed. The improved structure includes an air-gap region formed by removing an insulating material through an aperture residing in a mask.


9
Bin Zhao, Prahalad K Vasudev, Ronald S Horwath, Thomas E Seidel, Peter M Zeitzoff: Method of making a dual damascene interconnect structure using low dielectric constant material for an inter-level dielectric layer. Sematech, Lucent Technologies, August 8, 2000: US06100184 (102 worldwide citation)

A technique for fabricating a dual damascene interconnect structure using a low dielectric constant material as a dielectric layer or layers. A low dielectric constant (low-.di-elect cons.) dielectric material is used to form an inter-level dielectric (ILD) layer between metallization layers and in ...


10
Bin Zhao, Rusong Fang, Lihong Wang: Video editing GUI with layer view. ArcSoft, Patent Law Group, David C Hsia, July 4, 2006: US07073127 (87 worldwide citation)

A graphical user interface for editing a video story includes a storyboard pane, a timeline pane, and a layer pane. The storyboard pane displays video clips of the video story and their transitions. The timeline pane displays tracks including a video track, a video overlay track, a text track, an ef ...