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Tripsas Nicholas H, Bill Colin S, Vanbuskirk Michael A, Buynoski Matthew, Fang Tzu Ning, Cai Wei Daisy, Pangrle Suzette K, Avanzino Steven: Diode array architecture for addressing nanoscale resistive memory arrays. Spansion, Tripsas Nicholas H, Bill Colin S, Vanbuskirk Michael A, Buynoski Matthew, Fang Tzu Ning, Cai Wei Daisy, Pangrle Suzette K, Avanzino Steven, LAM Christine S, May 26, 2006: WO/2006/055482 (12 worldwide citation)

The present memory structure includes thereof a first conductor (BL), a second conductor (WL), a resistive memory cell (130) connected to the second conductor (WL), a first diode (134) connected to the resistive memory cell (130) and the first conductor (BL), and oriented in the forward direction fr ...


2
Bill Colin S, Cai Wei Daisy: Page buffer architecture for programming, erasing and reading nanoscale resistive memory devices. Spansion, Bill Colin S, Cai Wei Daisy, JAIPERSHAD Rajendra, December 7, 2006: WO/2006/130438 (10 worldwide citation)

In the present method of programming and erasing the resistive memory devices (30) of an array thereof, upon a single command, high current is provided in both the program and erase functions to program and erase only those memory devices (30) whose state is to be changed from the previous state the ...


3
Bill Colin S, Cai Wei Daisy: Temperature compensation of thin film diode voltage threshold in memory sensing circuit. Spansion, Bill Colin S, Cai Wei Daisy, DRAKE Paul S, September 28, 2006: WO/2006/102391 (7 worldwide citation)

Systems and methodologies are provided for temperature compensation of thin film diode voltage levels in memory sensing circuits. The subject invention includes a temperature sensitive bias circuit (408) and an array core (500) with a temperature variable select device (430). The array core (500) ca ...


4
Vanbuskirk Michael A, Fang Tzu Ning, Bill Colin S, Lan Zhida: Control of memory arrays utilizing zener diode-like devices. Advanced Micro Devices, sCOLLOPY Daniel R, May 21, 2004: WO/2004/042738 (4 worldwide citation)

The present invention facilitates semiconductor devices by aiding the efficiency in the way individual devices change states in a semiconductor array (100, 200, 212, 300, 400). State change voltages can be applied to a single device in the array (100, 200, 212, 300, 400) of semiconductor devices wit ...


5
Yamada Shigekazu, Akaogi Takao, Bill Colin S: Wordline driver for flash memory read mode. Advanced Micro Devices, Fujitsu, July 21, 2002: TW495754 (3 worldwide citation)

The present invention discloses a wordline voltage regulation method and system that provides a predetermined voltage as a wordline voltage to a plurality of wordlines during read mode. A supply voltage (Vcc) is regulated and temperature compensated by a wordline driver circuit to provide the predet ...


6
Lan Zhida, Van, Buskirk Michael A, Bill Colin S: Memory device and methods of using and making the device. Advanced Micro Devices, Lan Zhida, Van, Buskirk Michael A, Bill Colin S, sCOLLOPY Daniel R, February 3, 2005: WO/2005/011014 (3 worldwide citation)

A memory cell (104) made of two electrodes(106, 202, 108, 204) with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media (110) contains an active low conductive layer (112) and passive layer (114). The controllably conductive media (110) changes ...


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Fang Tzu Ning, Vanbuskirk Michael A, Bill Colin S: Control of memory devices possessing variable resistance characteristics. Advanced Micro Devices, Fang Tzu Ning, Vanbuskirk Michael A, Bill Colin S, DRAKE Paul S, April 6, 2006: WO/2006/036622 (3 worldwide citation)

Systems and methods employing at least one constant current source (114, 404) to facilitate programming of an organic memory cell (102, 302, 402, 904, 1102, 1206) and/or employing at least one constant voltage source (112, 304) to facilitate erasing of a memory device (200, 300, 400, 900, 1100). The ...


8
Lan Zhida, Bill Colin S, Vanbuskirk Michael A: Erasing and programming an organic memory device and methods of operating and fabricating. Advanced Micro Devices, Lan Zhida, Bill Colin, S, Vanbuskirk Michael, A, sCOLLOPY Daniel R, November 25, 2004: WO/2004/102579 (2 worldwide citation)

An organic memory cell (100, 1300, 1500) made of two electrodes (104, 110, 1304, 1306, 1502, 1504) with a selectively conductive media (106/108, 1308) between the two electrodes (104, 110, 1304, 1306, 1502, 1504) is disclosed. The selectively conductive media (106/108, 1308) contains an organic laye ...


9
Vanbuskirk Michael A, Bill Colin S, Lan Zhida, Fang Tzu Ning: Write-once read-many times memory. Spansion, Vanbuskirk Michael A, Bill Colin S, Lan Zhida, Fang Tzu Ning, DRAKE Paul S, October 5, 2006: WO/2006/104858 (2 worldwide citation)

A write-once read-many times memory device (130) is made up of first and second electrodes (132, 138), a passive layer (134) between the first and second electrodes (132, 138), and an active layer (136) between the first and second electrodes. The memory device (130) is programmed by providing a cha ...


10
Yamada Shigekasu, Bill Colin S, Vanbuskirk Michael A: Semiconductor memory device. Advanced Micro Devices, Fujitsu, October 21, 2002: TW507201 (1 worldwide citation)

A wordline tracking structure for use in an array or flash EEPROM memory calls is provided. The tracking structure serves to match reference and sector core wordline voltages across the entire chip regardless of sector location. The tracking structure includes a second VPXG conductor line operativel ...