1
Bernard Dieny, Bruce A Gurney, Steven E Lambert, Daniele Mauri, Stuart S P Parkin, Virgil S Speriosu, Dennis R Wilhoit: Magnetoresistive sensor based on the spin valve effect. International Business Machines Corporation, Otto Schmid Jr, Leslie G Murray, April 27, 1993: US05206590 (295 worldwide citation)

A magnetoresistive (MR) sensor comprising a first and a second thin film layer of a magnetic material separated by a thin film layer of a non-magnetic metallic material. The first ferromagnetic layer is magnetically soft. The magnetization direction of the first layer of magnetic material is set sub ...


2
Bernard Dieny, Bruce A Gurney, Serhat Metin, Stuart S P Parkin, Virgil S Speriosu: Magnetoresistive sensor based on the spin valve effect. International Business Machines Corporation, Otto Schmid Jr, Leslie G Murray, October 27, 1992: US05159513 (173 worldwide citation)

A magnetoresistive (MR) sensor comprising a layered structure formed on a substrate includes a first and a second thin film layer of magnetic material separated by a thin film layer of non-magnetic metallic material such as Cu, Au, or Ag, with at least one of the layers of ferromagnetic material for ...


3
Peter M Baumgart, Bernard Dieny, Bruce A Gurney, Jean Pierre Nozieres, Virgil S Speriosu, Dennis R Wilhoit: Dual spin valve magnetoresistive sensor. International Business Machines Corporation, Leslie G Murray, February 15, 1994: US05287238 (155 worldwide citation)

A magnetoresistive read sensor based on the spin valve effect and having a multilayered, dual spin valve structure is described. The sensor read element includes first, second and third layers of ferromagnetic material separated from each other by layers of non-magnetic metallic material. The first ...


4
Olivier Redon, Bernard Dieny, Bernard Rodmacq: Magnetic spin polarization and magnetization rotation device with memory and writing process, using such a device. Commissariat a l&apos Energie Atomique, Oblon Spivak McClelland Maier & Neustadt P C, March 11, 2003: US06532164 (148 worldwide citation)

A magnetic spin polarizing a magnetization rotation device with a memory and a writing process using such a device. The device is configured to include an apparatus for polarizing the spin of electrons, including a magnetic layer having magnetization perpendicular to the plane of magnetization of re ...


5
Olivier Redon, Bernard Dieny, Bernard Rodmacq: Three-layered stacked magnetic spin polarization device with memory. Commissariat a l&apos Energie Atomique, Oblon Spivak McClelland Maier & Neustadt P C, August 5, 2003: US06603677 (133 worldwide citation)

A magnetic device including at least a memory cell having a first magnetic layer with a fixed magnetization direction. The first magnetic layer spin polarizes a writing current of electrons. The memory cell includes a second magnetic layer having a three-layered stack with a variable magnetization d ...


6
Bernard Dieny, Olivier Redon: Magnetic tunnel junction magnetic device, memory and writing and reading methods using said device. Commissariat a l Energie Atomique, Thelen Reid & Priest, September 27, 2005: US06950335 (105 worldwide citation)

Magnetic tunnel junction magnetic device (16) for writing and reading uses a reference layer (20c) and a storage layer (20a) separated by a semiconductor or insulating layer (20b). The blocking temperature of the magnetisation of the storage layer is less than that of the reference layer. The storag ...


7
William C Cain, Bernard Dieny, Robert E Fontana Jr, Virgil S Speriosu: Current biased magnetoresistive spin valve sensor. International Business Machines Corporation, Leslie G Murray, April 5, 1994: US05301079 (76 worldwide citation)

A magnetoresistive read sensor based on the spin valve effect in which a component of the read element resistance varies as the cosine of the angle between the magnetization directions in two adjacent magnetic layers is described. The sensor read element includes two adjacent ferromagnetic layers se ...


8
Jean Pierre Nozieres, Bernard Dieny, Olivier Redon, Ricardo Sousa, Ioan Lucian Prejbeanu: Magnetic memory with a magnetic tunnel junction written in a thermally assisted manner, and method for writing the same. Centre National de la Recherche Scientifique, Commissariat a l Energie Atomique, Burr & Brown, August 12, 2008: US07411817 (35 worldwide citation)

A system and method for writing to a magnetic memory written in a thermally assisted manner, each memory point formed by a magnetic tunnel junction, and having a substantially circular cross-section of the memory which is parallel to the plane of the layers forming the tunnel junction. The tunnel ju ...


9
Bernard Dieny, Bruce A Gurney, Stuart S P Parkin, Ian L Sanders, Virgil S Speriosu, Dennis R Wilhoit: Magnetoresistive sensor having multilayer thin film structure. International Business Machines Corporation, Leslie G Murray, August 23, 1994: US05341261 (35 worldwide citation)

A magnetoresistive (MR) sensor comprising a layered structure having at least one trilayer comprising a first and a second thin film ferromagnetic layers separated by and in interfacial contact with a third thin film non-metallic layer. A fourth thin film layer of material is within the first ferrom ...


10
Jei Wei Chang, Bernard Dieny, Mao Min Chen, Cheng Horng, Kochan Ju, Simon Liao: GMR configuration with enhanced spin filtering. Headway Technologies, George O Saile, Stephen B Ackerman, August 3, 2004: US06770382 (35 worldwide citation)

A Spin Valve GMR and Spin Filter SVGMR configuration where in the first embodiment an important buffer layer is composed of an metal oxide having a crystal lattice constant that is close the 1