1
Peter M Pani, Benjamin S Ting, Benny Ma: Programmable non-volatile bidirectional switch for programmable logic. BTR, Blakely Sokoloff Taylor & Zafman, June 17, 1997: US05640344 (34 worldwide citation)

A bidirectional passgate switch for connecting two conductors utilizes technology such as electrically erasable programmable read only memory (EEPROM). The switch includes two EEPROM components wherein the floating gates of the components are shared. In one embodiment a first n-channel passgate tran ...


2
Cyrus Tsui, Benny Ma, Om P Agrawal, Ju Shen, Sam Tsai, Jack Wong, Chan Chi Jason Cheng: Non-volatile and reconfigurable programmable logic devices. Lattice Semiconductor Corporation, Greg J Michelson, MacPherson Kwok Chen & Heid, December 7, 2004: US06828823 (32 worldwide citation)

An integrated circuit includes non-volatile and volatile memory, with the volatile memory controlling the integrated circuit's functionality. Various techniques are disclosed for programming the different types of memory through one or more data ports to provide in-system programmability and dy ...


3
Benny Ma, San Ta Kow, Ann Wu, Thomas Tsui: Data decompression. Lattice Semiconductor Corporation, September 15, 2009: US07589648 (5 worldwide citation)

In one embodiment, a data decompression circuit for a data stream having a repeated data word is provided. The data stream is compressed into a series of data frames such that the repeated data word is removed from the series of data frames and such that each data frame corresponds to a header. The ...


4
Benny Ma: Electrically erasable non-volatile memory cell with no static power dissipation. Lattice Semiconductor Corporation, Edward C Kwok, Skjerven Morrill MacPherson Franklin & Friel, May 23, 2000: US06067252 (5 worldwide citation)

An electrically erasable non-volatile memory cell dissipates virtually no power by disabling a pull-up current when the non-volatile memory cell is programmed. In one embodiment, to properly initialize the electrically erasable non-volatile memory cell, the power of an inverting output buffer is pro ...


5
Benny Ma, Clement Lee: Internal tristate bus with arbitration logic. Lattice Semiconductor Corporation, Philip W Skjerven Morrill et al Woo Esq, November 28, 2000: US06154050 (2 worldwide citation)

A programmable logic device having an internal tristate bus is provided. The internal tristate bus may be driven by a plurality of driving elements. Such a tristate bus, and the circuitry for supporting it, can be implemented on less surface area than the multitude of unidirectional buses, and suppo ...


6
Benny Ma: Current-controlled high voltage discharge scheme. Lattice Semiconductor Corporation, MacPherson Kwok Chen & Heid, April 22, 2003: US06552595 (2 worldwide citation)

In a programmable integrated circuit, a discharge circuit for discharging high voltage nodes provides a current path whose current is limited by a control voltage. In one embodiment, the current path is implemented by a transistor coupled to the high voltage nodes, with the control voltage provided ...


7
Benny Ma: Electrically erasable non-volatile memory cell with integrated SRAM cell to reduce testing time. Lattice Semiconductor Corporation, Edward C Kwok, Skjerven Morrill MacPherson Franklin & Friel, September 12, 2000: US06118693

In a programmable integrated circuit, by providing a static random access memory (SRAM) cell in each electrically erasable (E.sup.2) non-volatile memory cell, testing time of circuits configured by the E.sup.2 non-volatile memory cells can be reduced substantially. In one embodiment, the SRAM cell c ...