1
Barry M Singer, Rajsekhar Jayaraman: Combined bipolar-field effect transistor resurf devices. North American Philips Corporation, Robert T Mayer, Steven R Biren, January 27, 1987: US04639761 (118 worldwide citation)

A combined bipolar-field effect transistor RESURF device includes a lightly-doped epitaxial buried layer of a first conductivity type located between a semiconductor substrate of the first conductivity type and an epitaxial surface layer of a second conductivity type opposite to that of the first. T ...


2
Andrew L Dalisa, Barry M Singer: X-Y addressable electrophoretic display device with control electrode. North American Philips Corporation, Thomas A Briody, Jack Oisher, James J Cannon Jr, May 13, 1980: US04203106 (109 worldwide citation)

An electrophoretic display device in which an colloidal suspension of pigment particles is contained between a pair of electrodes, and means are provided in the structure of the electrodes of the cell for the establishment of a voltage threshold for the transport of pigment particles. This threshold ...


3
Barry M Singer, Gert W Bruning, Satyendranath Mukherjee: Semiconductor switch with parallel DMOS and IGT. North American Philips Corporation, Robert T Mayer, July 3, 1990: US04939566 (30 worldwide citation)

A semiconductor switch comprising a lateral DMOS and a lateral IGT both of which can be fabricated in a monolithic integrated circuit. In operation the lateral DMOS stays on while the lateral IGT is switched off in order to reduce turn off power dissipation.


4
Barry M Singer: Lateral junction field effect transistor device. North American Philips Corporation, Robert T Mayer, Steven R Biren, November 27, 1984: US04485392 (29 worldwide citation)

A lateral junction field effect transister device includes both a surface semiconductor layer located between the gate and drain contact regions of the device and a buried semiconductor layer which extends beneath at least the drain contact region and the surface semiconductor layer of the device. T ...


5
Barry M Singer, Gert W Bruning, Satyendranath Mukherjee: Semiconductor switch with parallel lateral double diffused MOS transistor and lateral insulated gate transistor. North American Philips Corporation, Robert T Mayer, May 15, 1990: US04926074 (24 worldwide citation)

A semiconductor switch comprising a lateral DMOS and a lateral IGT both of which can be fabricated in a monolithic integrated circuit. In operation the lateral DMOS stays on while the lateral IGT is switched off in order to reduce turn off power dissipation.


6
Johnny K O Sin, Barry M Singer, Satyendranath Mukherjee: Power integrated circuit with latch-up prevention. North American Philips, Steven R Biren, September 7, 1993: US05243214 (22 worldwide citation)

A power integrated circuit includes a substrate with an overlying epitaxial surface layer of opposite conductivity type. A semiconductor power device, such as a high-power diode or lateral MOS transistor, is located in the epitaxial layer and forms a p-n junction diode with the substrate. The power ...


7
Raj Jayaraman, Barry M Singer: Conductivity-enhanced combined lateral MOS/bipolar transistor. North American Philips Corporation, Robert T Mayer, Steven R Biren, September 2, 1986: US04609929 (18 worldwide citation)

A combined lateral MOS/bipolar transistor includes an intermediate semiconductor layer of the same conductivity type as the channel region which extends laterally from the channel region to beneath the drain contact region of the device. Additionally, a floating semiconductor layer of opposite condu ...


8
Barry M Singer, Yannick J Thefaine: Method of reticulating a pyroelectric vidicon target. North American Philips Corporation, Carl P Steinhauser, February 13, 1979: US04139444 (11 worldwide citation)

A method of fabricating a pyroelectric vidicon target wherein a layer of pyroelectric material is attached to a substrate, reduced in thickness, reticulated, covered with an electron permeable support layer, removed from the substrate, and covered with a layer of silicon oxide on the side scanned by ...


9
Barry M Singer, Joseph J Lalak: Method of reducing the thickness of a wafer of fragile material. North American Philips Corporation, Frank R Trifari, Carl P Steinhauser, April 19, 1977: US04018638 (5 worldwide citation)

A method of reducing the thickness of a wafer of fragile material, e.g. pyroelectric material, by placing the wafer, supported only at its rim, in a holder filled with a non-corrosive liquid. The holder with the exposed surface of wafer is placed in an etch bath to reduce the thickness of the wafer. ...


10
Thomas H Conklin, Barry M Singer: Pyroelectric vidicon having a protective covering on the pyroelectric target. North American Philips Corporation, Frank R Trifari, Carl P Steinhauser, April 19, 1977: US04019084 (4 worldwide citation)

In a pyroelectric vidicon, the target is covered with a layer of vacuum compatible material which has a high secondary emission coefficient, a low first cross-over and low conductivity to prevent decomposition of the target.