1
Stephen P Cole, William J Murphy, Barbara A Waterhouse: Bond pad. International Business Machines Corporation, Schmeiser Olsen & Watts, William D Sabo, June 6, 2006: US07056820 (9 worldwide citation)

A bond pad upon which a wirebond interconnection is formed, consisting of a first bond pad layer formed on a chip, and a second bond pad layer formed on the first bond pad layer, wherein the first bond pad layer is more resistant to removal than the second bond pad layer during probe testing, and th ...


2
Douglas D Coolbaugh, Zhong Xiang He, Wolfgang Sauter, Barbara A Waterhouse: Optimum padset for wire bonding RF technologies with high-Q inductors. International Business Machines Corporation, Scully Scott Murphy & Presser P C, William D Sabo Esq, January 30, 2007: US07170181 (3 worldwide citation)

An RF structure that includes an optimum padset for wire bonding and a high performance inductor that contains relatively thick metal inductor wires, both of which are located atop the final interconnect level of an interconnect structure. Specifically, the RF structure includes a dielectric layer h ...


3
Wagdi W Abadeer, Eric Adler, Zhong Xiang He, Bradley Orner, Vidhya Ramachandran, Barbara A Waterhouse, Michael Zierak: Non-Continuous encapsulation layer for MIM capacitor. International Busniess Machines Corporation, Anthony J Canale, July 5, 2005: US06913965 (2 worldwide citation)

The present invention relates to metal-insulator-metal (MIM) capacitors and field effect transistors (FETs) formed on a semiconductor substrate. The FETs are formed in Front End of Line (FEOL) levels below the MIM capacitors which are formed in upper Back End of Line (BEOL) levels. An insulator laye ...


4
Wagdi Abadeer, Eric Adler, Zhong Xiang He, Bradley Orner, Vidhya Ramachandran, Barbara A Waterhouse, Michael Zierak: Non-continuous encapsulation layer for MIM capacitor. International Business Machines Corporation, Anthony J Canale, February 5, 2008: US07326987 (1 worldwide citation)

The present invention relates to metal-insulator-metal (MIM) capacitors and field effect transistors (FETs) formed on a semiconductor substrate. The FETs are formed in Front End of Line (FEOL) levels below the MIM capacitors which are formed in upper Back End of Line (BEOL) levels. An insulator laye ...


5
Douglas D Coolbaugh, Zhong Xiang He, Wolfgang Sauter, Barbara A Waterhouse: Optimum padset for wire bonding RF technologies with high-Q inductors. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Richard M Kotulak Esq, July 13, 2010: US07754574

An RF structure that includes an optimum padset for wire bonding and a high performance inductor that contains relatively thick metal inductor wires, both of which are located atop the final interconnect level of an interconnect structure. Specifically, the RF structure includes a dielectric layer h ...


6
Douglas D Coolbaugh, Zhong Xiang He, Wolfgang Sauter, Barbara A Waterhouse: Optimum padset for wire bonding rf technologies with high-q inductors. International Business Machines Corporation, Scully Scott Murphy & Presser PC, May 19, 2005: US20050104188-A1

An RF structure that includes an optimum padset for wire bonding and a high performance inductor that contains relatively thick metal inductor wires, both of which are located atop the final interconnect level of an interconnect structure. Specifically, the RF structure includes a dielectric layer h ...


7
Wagdi W Abadeer, Eric Adler, Zhong Xiang He, Bradley Orner, Vidhya Ramachandran, Barbara A Waterhouse, Michael Zierak: Non-continuous encapsulation layer for mim capacitor. International Business Machines Corporation, Ibm Microelectronics, September 1, 2005: US20050189615-A1

The present invention relates to metal-insulator-metal (MIM) capacitors and field effect transistors (FETs) formed on a semiconductor substrate. The FETs are formed in Front End of Line (FEOL) levels below the MIM capacitors which are formed in upper Back End of Line (BEOL) levels. An insulator laye ...


8
Stephen P Cole, William J Murphy, Barbara A Waterhouse: Improved bond pad. International Business Machines Corporation, Schmeiser Olsen Watts, May 26, 2005: US20050112794-A1

A bond pad upon which a wirebond interconnection is formed, consisting of a first bond pad layer formed on a chip, and a second bond pad layer formed on the first bond pad layer, wherein the first bond pad layer is more resistant to removal than the second bond pad layer during probe testing, and th ...


9
Douglas D Coolbaugh, Zhong Xiang He, Wolfgang Sauter, Barbara A Waterhouse: Optimum padset for wire bonding rf technologies with high-q inductors. International Business Machines Corporation, Scully Scott Murphy & Presser PC, June 5, 2008: US20080132026-A1

An RF structure that includes an optimum padset for wire bonding and a high performance inductor that contains relatively thick metal inductor wires, both of which are located atop the final interconnect level of an interconnect structure. Specifically, the RF structure includes a dielectric layer h ...