1
Bantval J Baliga: Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance. North Carolina State University, Bell Seltzer Park & Gibson, June 10, 1997: US05637898 (280 worldwide citation)

A power transistor having high breakdown voltage and low on-state resistance includes a vertical field effect transistor in a semiconductor substrate having a plurality of source, channel, drift and drain regions therein. A trench having a bottom in the drift region and opposing sidewalls which exte ...


2
Bantval J Baliga: Silicon carbide power MOSFET with floating field ring and floating field plate. North Carolina State University at Raleigh, Bell Seltzer Park & Gibson, August 3, 1993: US05233215 (210 worldwide citation)

A silicon carbide power MOSFET device includes a first silicon carbide layer, epitaxially formed on the silicon carbide substrate of opposite conductivity type. A second silicon carbide layer of the same conductivity type as the substrate is formed on the first silicon carbide layer. A power field e ...


3
Hsueh Rong Chang, Bantval J Baliga, Tat Sing P Chow: Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method. General Electric Company, Robert Ochis, James C Davis Jr, Marvin Snyder, January 31, 1989: US04801986 (209 worldwide citation)

A power field effect device has a gate grid having a plurality of elongate openings therein through which a base region forming a high voltage blocking junction with the underlying body was diffused. The openings have round ends in order to prevent the formation of spherical portions in the high vol ...


4
Manoj Mehrotra, Bantval J Baliga: Schottky barrier rectifier with MOS trench. North Carolina State University, Bell Seltzer Park & Gibson, November 15, 1994: US05365102 (165 worldwide citation)

A trench MOS Schottky barrier rectifier includes a semiconductor substrate having first and second faces, a cathode region of first conductivity type at the first face and a drift region of first conductivity type on the cathode region, extending to the second face. First and second trenches are for ...


5
Charles S Korman, Bantval J Baliga, Hsueh Rong Chang: Multicellular FET having a Schottky diode merged therewith. General Electric Company, Marvin Snynder, James C Davis Jr, May 5, 1992: US05111253 (162 worldwide citation)

A semiconductor power switching device comprises a multicellular FET structure with a Schottky barrier diode structure interspersed therewith with at least some of the FET cells being free of Schottky barrier portions. The ratio of Schottky barrier contact area to FET cell area in the overall device ...


6
Bantval J Baliga: Silicon carbide switching device with rectifying-gate. North Carolina State University, Bell Seltzer Park & Gibson, March 7, 1995: US05396085 (148 worldwide citation)

A silicon carbide switching device includes a three-terminal interconnected silicon MOSFET and silicon carbide MESFET (or JFET) in a composite substrate of silicon and silicon carbide. For three terminal operation, the gate electrode of the silicon carbide MESFET is electrically shorted to the sourc ...


7
Hsueh Rong Chang, Bantval J Baliga, David W Tong: Power rectifier with trenches. General Electric Company, John S Beulick, James C Davis Jr, Paul R Webb II, January 1, 1991: US04982260 (102 worldwide citation)

A semiconductor power rectifier attains low forward voltage drop, low reverse leakage current and improved switching speed by utilizing Schottky contact regions in a p-i-n rectifier along with other means for reducing the required forward bias voltage. In a preferred embodiment, the other means for ...


8
Bantval J Baliga, Tat Sing P Chow, Hsueh Rong Chang: Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area. General Electric Company, Robert Ochis, James C Davis Jr, Marvin Snyder, April 18, 1989: US04823176 (94 worldwide citation)

A power field effect device has a high voltage blocking junction which intersects the device surface under the gate electrode. That intersection is a closed plane geometric figure whose center is within the body region of the device rather than in the more heavily doped base region of the device. Th ...


9
Bantval J Baliga: Schottky barrier rectifiers and methods of forming same. North Carolina State University, Bell Seltzer Park & Gibson, March 18, 1997: US05612567 (93 worldwide citation)

A Schottky rectifier includes MOS-filled trenches and an anode electrode at a face of a semiconductor substrate and an optimally nonuniformly doped drift region therein which in combination provide high blocking voltage capability with low reverse-biased leakage current and low forward voltage drop. ...


10
Bantval J Baliga: Inversion-mode insulated-gate gallium arsenide field-effect transistors. General Electric Company, John R Rafter, James C Davis Jr, Marvin Snyder, February 4, 1986: US04568958 (93 worldwide citation)

Inversion-mode insulated field-effect transistor structures are provided wherein a lightly-doped GaAs drift or drain region is combined with a gate-controlled channel structure comprising a film or layer of a semiconductor layer other than GaAs and within which inversion regions may more readily be ...