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Souriau Jean Charles, Baleras François: (Fr) Dispositif comportant des composants integres encastres dans des cavites d une plaquette semi-conductrice d accueil et procede correspondant, (En) Device including integrated components imbedded in cavities of a reception semi-conductor plate and corresponding method. Commissariat A L Energie Atomique, Souriau Jean Charles, Baleras François, ILGART Jean Christophe, December 24, 2008: WO/2008/155231 (2 worldwide citation)

(EN) The invention relates to an electronic device including discrete integrated components and comprising: a so-called reception plate (2) including cavities (5, 5') containing said components having an active face (10) located in the same plane as a face (8) of the reception plate; and a side coat ...


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Souriau Jean Charles, Delevoye Elisabeth, Baleras François, Henry David: (Fr) Protection dun getter en couche mince, (En) Thin film getter protection. Commissariat A L Energie Atomique, Souriau Jean Charles, Delevoye Elisabeth, Baleras François, Henry David, sPOULIN Gérard, September 21, 2006: WO/2006/097652 (1 worldwide citation)

(EN) The invention relates to a method of maintaining the optimal properties of a thin film getter (10) in a cavity (8) of a microelectronic device (1), consisting in coating the getter film (10) with a protective layer (12) and installing a reaction element (14). According to the invention, an incr ...


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Baleras François, Renard Pierre, Rossat Cyrille: (Fr) Procede de fabrication de film conducteur anisotrope a inserts conducteurs pointus, (En) Method for making an anisotropic conductive film with pointed conductive inserts. Commissariat A L Energie Atomique, Baleras François, Renard Pierre, Rossat Cyrille, RICHARD Patrick, January 15, 2004: WO/2004/006324

(EN) The invention concerns a method for making an anisotropic conductive film with pointed conductive inserts. The method comprises engraving at least one pattern (C1, K1) in a monocrystalline substrate (15) to form at least one cell (22, 26) having a base designed to form the contour of one end of ...


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Baleras François, Delaguillaumie Fanny, Zussy Marc: (Fr) Procede de reroutage de dispositifs microelectroniques sans lithographie, (En) Method for re-routing lithography-free microelectronic devices. Commissariat A L Energie Atomique, Baleras François, Delaguillaumie Fanny, Zussy Marc, sPOULIN Gérard, July 8, 2004: WO/2004/057667

(EN) The invention concerns a method for making a wafer level electronic chip scale package, the wafer comprising at least one chip and said at least one chip including input/output contact pads on one surface of the wafer called front side, the method comprising the following steps: a) forming, by ...


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Baleras François, Kopp Christophe: (Fr) Assemblage dun composant monte sur une surface de report, (En) Assembly of a component mounted on a transfer surface. Commissariat A L Energie Atomique, Baleras François, Kopp Christophe, LEHU Jean, July 14, 2005: WO/2005/064676

(EN) The invention relates to an optical component (30) which is intended to be mounted on a transfer surface (20). According to the invention, at least one face (A) of the component comprises at least one metallised anchoring area (37, 38) which is disposed in a slot such as to enable assembly by t ...


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Baleras François, Brunet Manquat Catherine: (Fr) Procede de realisation dun sabot de test de composants, (En) Method for making a block for testing components. Commissariat A L Energie Atomique, Baleras François, Brunet Manquat Catherine, sWEBER Etienne, May 2, 2002: WO/2002/035244

(EN) The invention concerns a test block (10) for an electronic component, comprising an embossed support layer (12) including a plurality of projecting protrusions (12), said protrusions being respectively equipped in their top parts with at least a conductive testing pad (14), capable of being ele ...


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Baleras François, Renard Pierre: (Fr) Systeme dassemblage de substrats a zones daccrochage pourvues de cavites, (En) System for assembling substrates to bonding zones provided with cavities. Commissariat A L Energie Atomique, Baleras François, Renard Pierre, LEHU Jean, May 11, 2000: WO/2000/026958

(EN) The invention concerns a device comprising a first substrate (100) with at least a bonding zone (110a, 110b), capable of being assembled with a second substrate (200), the bonding zone (110a, 110b) having a surface made of material (104) capable of being wetted by a fusible material. The invent ...


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Baleras François: (Fr) Procede dinterconnexion a travers un materiau semi-conducteur, (En) Method for producing an interconnection path through a semiconductor material. Commissariat A L Energie Atomique, Baleras François, BREVATOME, February 18, 1999: WO/1999/008318

(EN) The invention concerns a method for producing a connection between the top part and the bottom part of a microelectronic structure (22, 24, 26), comprising the following steps: carrying out an anistropic etching of the structure to obtain a via (30) with substantially parallel walls; depositing ...


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Baleras François, Massit Claude, Poupon Gilles, Sibuet Henri: (Fr) Structure de composants haute-densite formee par assemblage et son procede de fabrication, (En) High density component structure formed by assembling and method for making same. Commissariat A L Energie Atomique, Baleras François, Massit Claude, Poupon Gilles, Sibuet Henri, RICHARD Patrick, October 18, 2001: WO/2001/076878

(EN) The invention concerns a structure comprising a succession of elements for transmitting or receiving a signal along an axis. The structure comprises at least an assembly of two arrays (10, 11) stacked along the direction perpendicular to the axis, each array comprising a succession of elements ...



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