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Chung Young Sir, Baird Robert W, Durlam Mark A, Grynkewich Gregory W, Salter Eric J: Passive elements in mram embedded integrated circuits. Freescale Semiconductor, Chung Young Sir, Baird Robert W, Durlam Mark A, Grynkewich Gregory W, Salter Eric J, KING Robert L, March 8, 2007: WO/2007/027381 (113 worldwide citation)

An integrated circuit device (300) comprises a substrate (301) and MRAM architecture (314) formed on the substrate (308). The MRAM architecture (314) includes a MRAM circuit (318) formed on the substrate (301); and a MRAM cell (316) coupled to and formed above the MRAM circuit (318). Additionally a ...


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Min Won Gi, Baird Robert W, Zuo Jiang Kai, Lee Gordon P: Antifuse element and electrically redundant antifuse array for controlled rupture location. Freescale Semiconductor, Min Won Gi, Baird Robert W, Zuo Jiang Kai, Lee Gordon P, KING Robert L, October 12, 2006: WO/2006/107384 (2 worldwide citation)

An antifuse element (102) having end corners (120, 122) of a gate electrode (104) positioned directly above an active area (106) or bottom electrode. The minimum programming voltage between the gate electrode (104) and the active area (106) creates a current path through an insulating layer (110) po ...


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Dawkins John, Wooding Gary George, Baird Robert W, Moore Richard Alan: Defining topology of a data processing system. Ibm, January 11, 1995: GB2279781-A

The invention relates to a method and apparatus for the maintenance of a data processing system 203. A topology map of the physical connections of direct access storage devices of storage subsystems 211 is created. This map enables the system to keep track of the physical configuration of DASDs and ...


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Chung Young Sir, Baird Robert W, Durlam Mark A: Methods of implementing magnetic tunnel junction current sensors. Freescale Semiconductor, lujin hua mude jun, November 5, 2008: CN200680040479

An integrated circuit device (800) is provided which comprises a substrate (801), a conductive line (807) configured to experience a pressure, and a magnetic tunnel junction (''MTJ'') core (802) formed between the substrate and the current line. The conductive line (807) is configured to move in res ...


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Chung Young Sir, Baird Robert W, Engel Bradley N: Magnetic tunnel junction pressure sensors and methods. Freescale Semiconductor, tuchang cun, October 29, 2008: CN200680040311

An integrated circuit device is provided which comprises a substrate, a conductive line configured to experience a pressure, and a magnetic tunnel junction ('MTJ') core formed between the substrate and the current line. The conductive line is configured to move in response to the pressure, and carri ...


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Durlam Mark A, Chung Young Sir, Baird Robert W, Engel Bradley N: 3d inductor and transformer devices in mram embedded integrated circuits. Freescale Semiconductor, fujian jun, August 6, 2008: CN200680017817

An integrated circuit device includes a magnetic random access memory (MRAM) architecture and at least one inductance element formed on the same substrate using the same fabrication process technology. The inductance element, which may be an inductor or a transformer, is formed at the same metal lay ...


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Chung Young Sir, Baird Robert W, Durlam Mark A: Magnetic tunnel junction temperature sensors and methods. Freescale Semiconductor, Huang Qihang, Mu Dejun, November 25, 2009: CN200680036312

Techniques of sensing a temperature of a heat source disposed in a substrate of an integrated circuit are provided. According to one exemplary method, a Magnetic Tunnel Junction ('MTJ') temperature sensor is provided over the heat source. The MTJ temperature sensor comprises an MTJ core configured t ...


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Chung Young Sir, Baird Robert W, Durlam Mark A: Magnetic tunnel junction temperature sensors. Freescale Semiconductor, qinchen, October 1, 2008: CN200680036269

An integrated circuit device (600) is provided which includes a heat source (604) disposed in a substrate (602), and a Magnetic Tunnel Junction (''MTJ'') temperature sensor (608) disposed over the heat source.


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Chung Young Sir, Baird Robert W, Grynkewich Gregory W: Method for tunnel junction sensor with magnetic cladding. Freescale Semiconductor, huangqi hang mude jun, September 3, 2008: CN200680027836

Methods and apparatus are provided for sensing physical parameters. The apparatus (30) comprises a magnetic tunnel junction (MTJ) [32] and a magnetic field source (34) whose magnetic field (35) overlaps the MTJ and whose proximity to the MTJ varies in response to an input to the sensor. A magnetic s ...