1
Ashok Challa, Alan Elbanhawy, Steven P Sapp, Peter H Wilson, Babak S Sani, Christopher B Kocon: Power semiconductor devices and methods of manufacture. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, March 18, 2008: US07345342 (196 worldwide citation)

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other tech ...


2
Ashok Challa, Alan Elbanhawy, Dean E Probst, Steven P Sapp, Peter H Wilson, Babak S Sani, Becky Losee, Robert Herrick, James J Murphy, Gordon K Madson, Bruce D Marchant, Christopher B Kocon, Debra S Woolsey: Methods of making power semiconductor devices with thick bottom oxide layer. Fairchild Semiconductor Corporation, Kilpatrick Townsend & Stockton, March 27, 2012: US08143124 (110 worldwide citation)

A method of manufacturing a semiconductor device having a charge control trench and an active control trench with a thick oxide bottom includes forming a drift region, a well region extending above the drift region, an active trench extending through the well region and into the drift region, a char ...


3
Ashok Challa, Alan Elbanhawy, Steven P Sapp, Peter H Wilson, Babak S Sani, Christopher B Kocon: Trenched shield gate power semiconductor devices and methods of manufacture. Fairchild Semiconductor Corporation, Kilpatrick Townsend & Stockton, July 19, 2011: US07982265 (43 worldwide citation)

A semiconductor power device includes a drift region of a first conductivity type, a well region extending above the drift region and having a second conductivity type opposite the first conductivity type, an active trench extending through the well region and into the drift region. The active trenc ...


4
Thomas E Grebs, Rodney S Ridley, Steven P Sapp, Peter H Wilson, Babak S Sani, Gary M Dolny, John Mytych, Becky Losee, Adam Selsley, Christopher B Kocon: Methods of forming inter-poly dielectric (IPD) layers in power semiconductor devices. Fairchild Semiconductor Corporation, Kilpatrick Townsend & Stockton, March 27, 2012: US08143123 (10 worldwide citation)

A method for forming power semiconductor devices having an inter-electrode dielectric (IPD) layer inside a trench includes providing a semiconductor substrate with a trench, lining the sidewalls and bottom of the trench with a first layer of dielectric material, filling the trench with a first layer ...


5
Ashok Challa, Alan Elbanhawy, Dean E Probst, Steven P Sapp, Peter H Wilson, Babak S Sani, Becky Losee, Robert Herrick, James J Murphy, Gordon K Madson, Bruce D Marchant, Christopher B Kocon, Debra S Woolsey: Methods related to power semiconductor devices with thick bottom oxide layers. Fairchild Semiconductor Corporation, January 20, 2015: US08936985

A method can include forming a drift region, forming a well region above the drift region, and forming an active trench extending through the well region and into the drift region. The method can include forming a first source region in contact with a first sidewall of the active trench and a second ...


6
Ashok Challa, Alan Elbanhawy, Thomas E Grebs, Nathan L Kraft, Dean E Probst, Rodney S Ridley, Steven P Sapp, Qi Wang, Chongman Yun, J G Lee, Peter H Wilson, Joseph A Yedinak, J Y Jung, H C Jang, Babak S Sani, Richard Stokes, Gary M Dolny, John Mytych, Becky Losee, Adam Selsley, Robert Herrick, James J Murphy, Gordon K Madson, Bruce D Marchant, Christopher L Rexer, Christopher B Kocon, Debra S Woolsey: Trenched Shield Gate Power Semiconductor Devices and Methods of Manufacture. Townsend And Townsend And Crew, June 26, 2008: US20080150020-A1

A semiconductor power device includes a drift region of a first conductivity type, a well region extending above the drift region and having a second conductivity type opposite the first conductivity type, an active trench extending through the well region and into the drift region. The active trenc ...


7
Ashok Challa, Alan Elbanhawy, Thomas E Grebs, Nathan L Kraft, Dean E Probst, Rodney S Ridley, Steven P Sapp, Qi Wang, Chongman Yun, JG Lee, Peter H Wilson, Joseph A Yedinak, JY Jung, HC Jang, Babak S Sani, Richard Stokes, Gary M Dolny, John Mytych, Becky Losee, Adam Selsley, Robert Herrick, James J Murphy, Gordon K Madson, Bruce D Marchant, Christopher L Rexer, Christopher B Kocon, Debra S Woolsey: Power semiconductor devices and methods of manufacture. Fairchild Semiconductor, Townsend And Townsend And Crew, August 4, 2005: US20050167742-A1

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other tech ...


8
Ashok Challa, Alan Elbanhawy, Dean E Probst, Steven P Sapp, Peter H Wilson, Babak S Sani, Becky Losee, Robert Herrick, James J Murphy, Gordon K Madson, Bruce D Marchant, Christopher B Kocon, Debra S Woolsey: Methods of Making Power Semiconductor Devices with Thick Bottom Oxide Layer. Townsend And Townsend And Crew, June 12, 2008: US20080138953-A1

A method for forming thick oxide at the bottom of a trench formed in a semiconductor substrate includes forming a conformal oxide film that fills the trench and covers a top surface of the substrate. and etching the oxide film off the top surface of the substrate and inside the trench to leave a sub ...


9
Thomas E Grebs, Rodney S Ridley, Steven P Sapp, Peter H Wilson, Babak S Sani, Gary M Dolny, John Mytych, Becky Losee, Adam Selsley, Christopher B Kocon: Methods of Forming Inter-poly Dielectric (IPD) Layers in Power Semiconductor Devices. Townsend And Townsend And Crew, August 21, 2008: US20080199997-A1

A method for forming power semiconductor devices having an inter-electrode dielectric (IPD) layer inside a trench includes providing a semiconductor substrate with a trench, lining the sidewalls and bottom of the trench with a first layer of dielectric material, filling the trench with a first layer ...


10
Ashok Challa, Alan Elbanhawy, Steven P Sapp, Qi Wang, Peter H Wilson, Babak S Sani, Christopher B Kocon: Power Semiconductor Devices with Barrier Layer to Reduce Substrate Up-Diffusion and Methods of Manufacture. Townsend And Townsend And Crew, August 21, 2008: US20080197407-A1

A method for controlling the thickness of an expitaxially grown semiconductor material includes providing a semiconductor substrate that is doped by dopants of a first type; forming a buffer layer atop the semiconductor substrate, the buffer layer being doped with dopants of a second type that has m ...