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Yasuhiro Funahashi, Akihiko Tsuruoka, Masayuki Matsukura, Toru Haneda, Yoshio Fukuda, Junichi Kamata, Keiko Takahashi, Tomohiro Matsushima, Kazuki Miyazaki, Ken ichi Nomoto, Tatsuo Watanabe, Hiroshi Obaishi, Atsumi Yamaguchi, Sachi Suzuki, Katsuji Nakamura, Fusayo Mimura, Yuji Yamamoto, Junji Matsui, Kenji Matsui, Takako Yoshiba, Yasuyuki Suzuki, Itaru Arimoto: Nitrogen-containing aromatic derivatives. Eisai, Andrea L C Robidoux, Choate Hall & Stewart, August 7, 2007: US07253286 (78 worldwide citation)

Compounds represented by the following general formula: [wherein Ag is an optionally substituted 5- to 14-membered heterocyclic group, etc.; Xg is —O—, —S—, etc.; Yg is an optionally substituted C6-14 aryl group, an optionally substituted 5- to 14-membered heterocyclic group, etc.; and Tg1 is a grou ...


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Yasuhiro Funahashi, Akihiko Tsuruoka, Masayuki Matsukura, Toru Haneda, Yoshio Fukuda, Junichi Kamata, Keiko Takahashi, Tomohiro Matsushima, Kazuki Miyazaki, Ken ichi Nomoto, Tatsuo Watanabe, Hiroshi Obaishi, Atsumi Yamaguchi, Sachi Suzuki, Katsuji Nakamura, Fusayo Mimura, Yuji Yamamoto, Junji Matsui: Nitrogen-containing aromatic derivatives. Eisai R & D Management, Andrea L C Robidoux, Choate Hall & Stewart, November 3, 2009: US07612092 (25 worldwide citation)

Compounds represented by the following general formula: [wherein Ag is an optionally substituted 5- to 14-membered heterocyclic group, etc.; Xg is —O—, —S—, etc.; Yg is an optionally substituted C6-14 aryl group, an optionally substituted 5- to 14-membered heterocyclic group, etc.; and Tg1 is a grou ...


3
Atsumi Yamaguchi: Method for forming resist pattern. Mitsubishi Denki Kabushiki Kaisha, Oblon Spivak McClelland Maier & Neustadt P C, January 8, 2002: US06337175 (19 worldwide citation)

An object is to enhance focus latitude and to suppress variations of widths due to different intervals in a resist pattern. A positive resist is applied on a substrate (


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Atsumi Yamaguchi: Method for manufacturing semiconductor device. Mitsubishi Denki Kabushiki Kaisha, Oblon Spivak McClelland Maier & Neustadt P C, November 9, 1999: US05981149 (15 worldwide citation)

When a resist pattern used to manufacture a semiconductor integrated circuit element is formed, high alignment precision can be achieved. A method for manufacturing a semiconductor device comprises the steps of: irradiating exposure light onto a resist film coated on a substrate to be etched via a p ...


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Atsumi Yamaguchi, Kouichirou Tsujita: Method of manufacturing semiconductor device. Renesas Technology, Oblon Spivak McClelland Maier & Neustadt P C, August 10, 2004: US06774043 (11 worldwide citation)

Ions are implanted into a resist pattern for forming a wiring pattern. Argon is employed as the ion species, for performing ion implantation under 50 keV at 1×10


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Takashi Okagawa, Tetsuya Yamada, Atsushi Ueno, Atsumi Yamaguchi, Kouichirou Tsujita: Method of manufacturing electronic device. Renesas Technology, Oblon Spivak McClelland Maier & Neustadt P C, August 30, 2005: US06938238 (4 worldwide citation)

In a method of forming a circuit pattern including fine pattern features and fine space, a hard mask layer is patterned with a first pattern defined by eliminating the fine space for merging the pattern features. Thereafter the hard mask layer is shrank. Next, the hard mask layer is patterned with a ...


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Atsumi Yamaguchi: Method of forming photomask and pattern and method of forming a semiconductor device. Mitsubishi Denki Kabushiki Kaisha, McDermott Will & Emery, October 24, 2000: US06136479 (3 worldwide citation)

A photomask where interconnection patterns and a contact hole pattern are drawn is used. According to the method, an overlay error due to a manufacturing error among reticles can be restricted.


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Atsumi Yamaguchi, Kouichirou Tsujita: Method of manufacturing semiconductor device. Mitsubishi Denki Kabushiki Kaisha, Oblon Spivak Mcclelland Maier & Neustadt PC, January 31, 2002: US20020013055-A1 (2 worldwide citation)

Ions are implanted into a resist pattern for forming a wiring pattern. Argon is employed as the ion species, for performing ion implantation under 50 keV at 1×1016/cm2. Due to the ion implantation, the thickness of the resist pattern contracts to about 334 nm, i.e., about 75% of the thickness of 445 ...


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Atsumi Yamaguchi: Methods and developer for developing a positive photoresist. Mitsubishi Denki Kabushiki Kaisha, McDermott Will & Emery, May 11, 1999: US05902718 (1 worldwide citation)

Methods for developing a positive photoresist comprise providing a positive photoresist and developing the positive photoresist with a developer comprising a quaternary ammonium hydroxide and a quaternary ammonium halogenide. The positive photoresist has an unexposed portion dissolution rate with a ...


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Atsumi Yamaguchi: Evaluation method. Renesas Technology, Oblon Spivak McClelland Maier & Neustadt P C, November 1, 2005: US06960481 (1 worldwide citation)

A high-reliability evaluation technique is proposed which is related to semiconductor device manufacture. A photoresist formed on a wafer is subjected to exposure and development thereby to form a pair of opposed patterns (1, 2) with distance x in the photoresist, followed by measurement of distance ...