1
Ravi Laxman
Ashutosh Misra, Benjamin J Jurcik Jr, Ravi Laxman: Chemical storage device with integrated load cell. Air Liquide Electronics U S, Patricia E McQueeney, August 10, 2010: US07770448 (3 worldwide citation)

A chemical storage device and a method for monitoring chemical usage are described herein. The device and disclosed method utilize a chemical storage canister and a load cell integrated into one transportable unit. The load cell is capable of compensating for the added weight of attached dispensing ...


2
Ravi Laxman
Ravi Laxman, Ashutosh Misra, Jean Marc Girard: Alkylsilanes as solvents for low vapor pressure precursors. Air Liquide Electronics U S, Brandon Clark, November 13, 2007: US07293569

Compositions and methods for cleaning deposition systems utilizing alkylsilanes are described herein. In an embodiment, a method of cleaning a semiconductor fabrication system comprises flushing the system with a solvent comprising at least one alkylsilane. In another embodiment, a method of removin ...


3
Ravi Laxman
Ziyun Wang, Ashutosh Misra, Ravi Laxman: Silicon precursors and method for low temperature CVD of silicon-containing films. Air Liquide Electronics U S, Patricia E McQueeney, January 24, 2012: US08101788

Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an a ...


4
Ravi Laxman
Ziyun Wang, Ashutosh Misra, Ravi Laxman: Silicon precursors and method for low temperature CVD of silicon-containing films. Air Liquide Electronics U S, Patricia E McQueeney, July 24, 2012: US08227358

Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an a ...


5
Ravi Laxman
Ravi Laxman, Ashutosh Misra: Alkylsilanes As Solvents For Low Vapor Pressure Precursors. Air Liquide, June 14, 2007: US20070131252-A1

Compositions and methods for cleaning deposition systems utilizing alkylsilanes are described herein. In an embodiment, a method of cleaning a semiconductor fabrication system comprises flushing the system with a solvent comprising at least one alkylsilane. In another embodiment, a method of removin ...


6
Ravi Laxman
Ziyun Wang, Ashutosh Misra, Ravi Laxman: Silicon precursors and method for low temperature cvd of silicon-containing films. Air Liquide Electronics Us, Air Liquide, Intellectual Property, April 3, 2008: US20080081106-A1

Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an a ...


7
Ravi Laxman
Ashutosh Misra, Benjamin J Jurcik, Ravi Laxman: Chemical storage device with integrated load cell. Air Liquide, March 22, 2007: US20070062270-A1

A chemical storage device and a method for monitoring chemical usage are described herein. The device and disclosed method utilize a chemical storage canister and a load cell integrated into one transportable unit. The load cell is capable of compensating for the added weight of attached dispensing ...


8
Ravi Laxman
Ziyun WANG, Ashutosh Misra, Ravi Laxman: Silicon precursors and method for low temperature cvd of silicon-containing films. Air Liquide Electronics US, July 14, 2011: US20110171381-A1

Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an a ...


9
Ashutosh Misra, Matthew Fisher, Benjamin Jurcik, Christian Dussarrat, Eri Tsukada, Jean Marc Girard: Method for forming dielectric or metallic films. L Air Liquide Societe Anonyme A Directoire et Conseil de Surveillance pour l Etude et l Exploitation des Procedes Georges Claude, Brandon Clark, January 27, 2009: US07482286 (21 worldwide citation)

Method for producing a metal silicon (oxy)nitride by introducing a carbon-free silicon source (for example, (SiH3)3N), a metal precursor with the general formula MXn (for example, Hf(NEt2)4), and an oxidizing agent (for example, O2) into a CVD chamber and reacting same at the surface of a substrate. ...


10
Ashutosh Misra: Plasma cleaning and etching methods using non-global-warming compounds. Air Liquide America Corporation, Burns Doane Swecker & Mathis L, June 5, 2001: US06242359 (18 worldwide citation)

Provided is a novel method of cleaning a chemical vapor deposition processing chamber having deposits on an inner surface thereof is provided. The process involves forming a plasma from one or more gases comprising a fluorine-containing but otherwise halogen-free non-global-warming compound, and con ...