1
Ulrich Klostermann
Stephen L Brown, Arunava Gupta, Ulrich Klostermann, Stuart Stephen Papworth Parkin, Wolfgang Raberg, Mahesh Samant: Magnetic tunnel junctions for MRAM devices. Infineon Technologies, International Business Machines Corporation, Slater & Matsil L, December 12, 2006: US07149105 (19 worldwide citation)

Methods of manufacturing MTJ memory cells and structures thereof. A diffusion barrier is disposed between an anti-ferromagnetic layer and a pinned layer of an MTJ memory cell to improve thermal stability of the MTJ memory cell. The diffusion barrier may comprise an amorphous material or a NiFe alloy ...


2
Jonathan Zanhong Sun, Arunava Gupta, Gang Xiao, Philip Louis Trouilloud, Philippe P Lecoeur: Magnetic devices and sensors based on perovskite manganese oxide materials. International Business Machines Corporation, Stephen S Strunck, August 11, 1998: US05792569 (76 worldwide citation)

A tri-layer thin film magnetoresistive device using doped perovskite manganate thin films as ferromagnetic elements, wherein a current is transported through the tri-layer structure, is disclosed. A large magnetoresistance change of about a factor of two is obtained in a low magnetic field, less tha ...


3
Arunava Gupta, Gary A West, Karl W Beeson: Light induced chemical vapor deposition of conductive titanium silicide films. Allied Corporation, Gus T Hampilos, Gerhard H Fuchs, February 4, 1986: US04568565 (73 worldwide citation)

Conductive titanium silicide-containing films and composites comprising substrates and the film are produced by light induced chemical vapor deposition. The process eliminates the need to anneal the silicide film in order to produce a conductive film and overcomes the problem of substrate damage ass ...


4
Arunava Gupta, Brian W Hussey: Process control for laser wire bonding. International Business Machines Corporation, Philip J Feig, July 4, 1989: US04845354 (72 worldwide citation)

An optical process monitor primarily for use in laser wire bonding detects the reflectivity change of the wire being bonded in order to provide feedback control of the high power laser used for bonding the wire to a pad. A low power laser beam which is co-linear or combined with the high power laser ...


5
Arunava Gupta, Rajiv V Joshi: Non-volatile magnetic memory cell and devices. International Business Machines Corporation, F Chau & Associates, March 7, 2000: US06034887 (67 worldwide citation)

A magnetic tunneling junction cell for use in memory and logic switching applications is formed with a first ferromagnetic layer, a second ferromagnetic layer, and an insulating layer interposed between said first and second ferromagnetic layers to form a magnetic tunnel junction element. The cell f ...


6
Nestor A Bojarczuk, Supratik Guha, Arunava Gupta: Product and process for forming a semiconductor structure on a host substrate. International Business Machines Corporation, Ohlandt Greeley Ruggiero & Perle L, April 3, 2001: US06210479 (48 worldwide citation)

A process for cheaply fabricating a substantially single crystal or a polycrystalline semiconductor structure on a host substrate. The process begins by depositing a layer of wide band gap nitride material


7
Nestor Alexander Bojarczuk Jr, Supratik Guha, Arunava Gupta, Sampath Purushothaman: Metal embedded passivation layer structure for microelectronic interconnect formation, customization and repair. International Business Machines Corporation, Casey P August Esq, Perman & Green, July 3, 2001: US06255671 (37 worldwide citation)

A structure includes a metal nitride film of the form MN, where M is selected from the group consisting of Ga, In, AlGa, AlIn, and AlGaIn. The structure has at least one electrically conductive metal region that is formed within and from the metal nitride film by a thermal process driven by absorpti ...


8
Arunava Gupta, Belgacem Haba, Brian W Hussey, Lubomyr T Romankiw: Laser etching of materials in liquids. International Business Machines Corporation, Philip J Feig, October 15, 1991: US05057184 (37 worldwide citation)

Laser etching of a substrate in a liquid is accomplished by laser induced sonic cavitation at the substrate surface. The preferred substrate is laser energy absorbing and has a finite melting temperature. The preferred liquid is an organic or inorganic inert liquid which does not chemically react wi ...


9
Arunava Gupta: Fabrication of patterned lines of high T.sub.c superconductors. International Business Machines Corporation, Jackson E Stanland, J David Ellett Jr, March 5, 1991: US04997809 (34 worldwide citation)

A method for producing a patterned layer of high T.sub.c oxide superconductor is provided in which patterning is accomplished prior to the attainment of a superconducting state in the layer. A solution containing precursor components of the desired oxide superconductor is sprayed onto a substrate an ...


10
Arunava Gupta, Gary A West, James T Yardley: Light induced production of ultrafine powders comprising metal silicide powder and silicon. Allied Corporation, Gus T Hampilos, Gerhard H Fuchs, December 10, 1985: US04558017 (22 worldwide citation)

A method of producing ultrafine powders comprising metal silicide powder and the products produced by the method are disclosed. The ultrafine powders comprising metal silicide powders are ideally suited to form stable colloidal suspensions which are used in the production of conductive metal silicid ...