1
Katherina Babich
Dirk Pfeiffer, Marie Angelopoulos, Katherina Babich, Phillip Brock, Wu Song Huang, Arpan P Mahorowala, David R Medeiros, Ratnam Sooriyakumaran: Antireflective SiO-containing compositions for hardmask layer. International Business Machines Corporation, Steven Capella, May 4, 2004: US06730454 (47 worldwide citation)

Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity prope ...


2
Katherina Babich
Katherina Babich, Arpan P Mahorowala, David R Medeiros, Dirk Pfeiffer: Lithographic antireflective hardmask compositions and uses thereof. International Business Machines Corporation, Ryan Mason & Lewis, Daniel P Morris Esq, May 29, 2007: US07223517 (7 worldwide citation)

Compositions and techniques for the processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask composition is provided. The composition comprises a fully condensed polyhedral oligosilsesquioxane, {RSiO1.5}n, wherein n equals 8; and at least one chrom ...


3
Katherina Babich
Katherina E Babich, Sean D Burns, Elbert E Huang, Arpan P Mahorowala, Dirk Pfeiffer, Karen Temple: Antireflective composition and process of making a lithographic structure. International Business Machines Corporation, Connolly Bove Lodge & Hutz, Daniel P Morris, February 5, 2008: US07326442 (6 worldwide citation)

An antireflective composition and a lithographic structure comprising a silicon-metal oxide, antireflective material derived from the composition. The antireflective composition comprises a polymer of formula I, wherein 1≦x≦2; 1≦y≦5; 1≧0; m>0; n>0; R is a chromophore, M is a metal selected from Grou ...


4
Katherina Babich
Scott D Allen, Katherina E Babich, Steven J Holmes, Arpan P Mahorowala, Dirk Pfeiffer, Richard Stephan Wise: Techniques for patterning features in semiconductor devices. International Business Machines Corporation, Ryan Mason & Lewis, Daniel P Morris, April 18, 2006: US07030008 (6 worldwide citation)

Techniques for semiconductor processing are provided. In one aspect, a method for patterning one or more features in a semiconductor device comprises the following step. At least one critical dimension of the one or more features is reduced during etching of the antireflective material. A lithograph ...


5
Katherina Babich
Katherina E Babich, Alfred Grill, Arpan P Mahorowala, Dirk P Pfeiffer: Water and aqueous base soluble antireflective coating/hardmask materials. International Business Machines Corporation, Ohlandt Greeley Ruggiero & Perle L, February 13, 2007: US07175966 (5 worldwide citation)

A multilayer lithographic structure which includes a substrate, having on a major surface thereof a first layer including a water and/or aqueous base soluble material which includes Ge, O, and H, and optionally X, wherein X is at least one of Si, N, and F; and disposed on the first layer a second la ...


6
Katherina Babich
Deok kee Kim, Kenneth T Settlemyer Jr, Kangguo Cheng, Ramachandra Divakaruni, Carl J Radens, Dirk Pfeiffer, Timothy Dalton, Katherina Babich, Arpan P Mahorowala, Harald Okorn Schmidt: Methods and structures for protecting one area while processing another area on a chip. International Business Machines Corporation, Whitman Curtis Christofferson & Cook PC, Joseph P Abate, March 3, 2009: US07497959 (4 worldwide citation)

Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased selectivity and controllability in regard to underlying materials, or both. Mask structures are provided whi ...


7
Katherina Babich
Katherina E Babich, Scott D Halle, David V Horak, Arpan P Mahorowala, Wesley C Natzle, Dirk Pfeiffer, Hongwen Yan: Etch selectivity enhancement for tunable etch resistant anti-reflective layer. International Business Machines Corporation, Yuanmin Cai Esq, Hoffman Warnick & D Alessandro, July 18, 2006: US07077903 (4 worldwide citation)

Methods for generating a nanostructure and for enhancing etch selectivity, and a nanostructure are disclosed. The invention implements a tunable etch-resistant anti-reflective (TERA) material integration scheme which gives high etch selectivity for both etching pattern transfer through the TERA laye ...


8
Katherina Babich
Katherina Babich, Elbert Huang, Arpan P Mahorowala, David R Medeiros, Dirk Pfeiffer, Karen Temple: Antireflective hardmask and uses thereof. International Business Machines Corporation, Ryan Mason & Lewis, January 19, 2010: US07648820 (4 worldwide citation)

Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a ca ...


9
Katherina Babich
Katherina Babich, Elbert Huang, Arpan P Mahorowala, David R Medeiros, Dirk Pfeiffer, Karen Temple: Antireflective hardmask and uses thereof. International Business Machines Corporation, Ryan Mason & Lewis, Daniel P Morris Esq, February 6, 2007: US07172849 (4 worldwide citation)

Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a ca ...


10
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Sean D Burns, Allen H Gabor, Scott D Halle, Arpan P Mahorowala, Dirk Pfeiffer: Process of making a lithographic structure using antireflective materials. International Business Machines Corporation, Connolly Bove Lodge & Hutz, Daniel P Morris Esq, October 23, 2012: US08293454 (2 worldwide citation)

A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a trans ...



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