1
Paul Brunemeier, Ph.D.
Paul E Brunemeier, Archita Sengupta, Justin F Gaynor, Robert H Havemann: Inhomogeneous materials having physical properties decoupled from desired functions. Novellus Systems, Silicon Valley Patent Group, March 29, 2005: US06873026 (16 worldwide citation)

A composition comprises a first component that provides a predetermined response to radiation, and a second component. Upon curing of the composition, portions of the first component bind together portions of the second component to form an inhomogeneous material having physical properties substanti ...


2
Archita Sengupta, Henry Yun: Removal of ionic residues or oxides and prevention of photo-induced defects, ionic crystal or oxide growth on photolithographic surfaces. Intel Corporation, Cool Patent P C, Joseph P Curtin, July 27, 2010: US07763399 (4 worldwide citation)

Techniques associated with surface treatments for photomasks, semiconductor wafers, and/or optics are generally described. In one example, a method includes preparing a surface of a photomask or semiconductor wafer for cleaning, and removing ionic contamination from a surface of a photomask or semic ...


3
Judy Huang, Justin F Gaynor, Archita Sengupta: Binder-enriched silicalite adhesion layer and apparatus for fabricating the same. Novellus Systems, Silicon Valley Patent Group, December 7, 2004: US06827982 (1 worldwide citation)

The adhesion of overlying layers to a silicalite-plus-binder dielectric layer is enhanced by forming a layer that includes the binder in a higher concentration. The overlying layer, e.g., silicon dioxide, silicon carbide or silicon nitride, adheres more tightly to the higher-concentration binder lay ...


4
Henry K Yun, Archita Sengupta, Florence Eschbach: Removal and prevention of photo-induced defects on photomasks used in photolithography. Intel Bstz, Blakely Sokoloff Taylor & Zafman, October 2, 2008: US20080241711-A1

Photoinduced defects that occur on photomasks used in photolithography may be removed or prevented. In one example a photomask is installed into a vacuum chamber, the contaminants on the photomask are broken down with heat, illumination or both and the broken-down contaminants are removed with a vac ...


5
Archita Sengupta, Henry Yun: Removal of ionic residues or oxides and prevention of photo-induced defects, ionic crystal or oxide growth on photolithographic surfaces. Cool Patent PC, c o INTELLEVATE, March 5, 2009: US20090061327-A1

Techniques associated with surface treatments for photomasks, semiconductor wafers, and/or optics are generally described. In one example, a method includes preparing a surface of a photomask or semiconductor wafer for cleaning, and removing ionic contamination from a surface of a photomask or semic ...



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