1
Jingyan Zhang, Utthaman Thirunavukkarasu, April D Schricker: Non-volatile storage system using opposite polarity programming signals for MIM memory cell. SanDisk 3D, Vierra Magen Marcus, April 15, 2014: US08699259 (25 worldwide citation)

A reversible resistance-switching metal-insulator-metal (MIM) stack is provided which can be set to a low resistance state with a first polarity signal and reset to a higher resistance state with a second polarity signal. The first polarity signal is opposite in polarity than the second polarity sig ...


2
Huiwen Xu, April D Schricker, Er Xuan Ping: Carbon-based interface layer for a memory device and methods of forming the same. SanDisk 3D, Dugan & Dugan PC, October 29, 2013: US08569730 (3 worldwide citation)

In a first aspect, a memory cell is provided that includes (1) a first conductor; (2) a reversible resistance-switching element formed above the first conductor including (a) a carbon-based resistivity switching material; and (b) a carbon-based interface layer coupled to the carbon-based resistivity ...


3
Yubao Li, April D Schricker: Carbon nano-film reversible resistance-switchable elements and methods of forming the same. SanDisk 3D, Dugan & Dugan PC, March 13, 2012: US08133793 (3 worldwide citation)

Methods of forming a microelectronic structure are provided, the microelectronic structure including a first conductor, a discontinuous film of metal nanoparticles disposed on a surface above the first conductor, a carbon nano-film formed atop the surface and the discontinuous film of metal nanopart ...


4
April D Schricker, Steven Maxwell: Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistance. SanDisk 3D, Dugan & Dugan PC, May 22, 2012: US08183121 (3 worldwide citation)

Methods in accordance with aspects of this invention form microelectronic structures in accordance with other aspects this invention, such as non-volatile memories, that include (1) a bottom electrode, (2) a resistivity-switchable layer disposed above and in contact with the bottom electrode, and (3 ...


5
April D Schricker, Mark H Clark: Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same. SanDisk 3D, Dugan & Dugan PC, July 12, 2011: US07977667 (3 worldwide citation)

Methods of forming planar carbon nanotube (“CNT”) resistivity-switching materials for use in memory cells are provided, that include depositing first dielectric material, patterning the first dielectric material, etching the first dielectric material to form a feature within the first dielectric mat ...


6
April D Schricker, Mark H Clark, Andy Fu, Huiwen Xu: Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom. SanDisk 3D, Dugan & Dugan PC, June 18, 2013: US08467224 (2 worldwide citation)

In some aspects, a microelectronic structure is provided that includes (1) a first conducting layer; (2) a first dielectric layer formed above the first conducting layer and having a feature that exposes a portion of the first conducting layer; (3) a graphitic carbon film disposed on a sidewall of t ...


7
Er Xuan Ping, Huiwen Xu, April D Schricker, Wipul Pemsiri Jayasekara: Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same. SanDisk 3D, Dugan & Dugan PC, April 16, 2013: US08421050 (1 worldwide citation)

Methods in accordance with this invention form a microelectronic structure by forming a carbon nano-tube (“CNT”) layer, and forming a carbon layer (“carbon liner”) above the CNT layer, wherein the carbon liner comprises: (1) a first portion disposed above and in contact with the CNT layer; and/or (2 ...


8
Roy E Scheuerlein, Alper Ilkbahar, April D Schricker: Memory cell that includes a carbon-based memory element and methods of forming the same. SanDisk 3D, Dugan & Dugan PC, September 17, 2013: US08536015 (1 worldwide citation)

In accordance with aspects of the invention, a method of forming a metal-insulator-metal stack is provided. The method includes forming a first conducting layer, forming a resistivity-switching carbon-based material above the first conducting layer, and forming a second conducting layer above the ca ...


9
April D Schricker: Electronic devices including carbon-based films having sidewall liners, and methods of forming such devices. SanDisk 3D, Dugan & Dugan PC, November 13, 2012: US08309407 (1 worldwide citation)

Methods in accordance with aspects of this invention form microelectronic structures in accordance with other aspects of this invention, such as non-volatile memories, that include (1) a layerstack having a pattern including sidewalls, the layerstack comprising a resistivity-switchable layer dispose ...


10
April D Schricker: Methods for increasing carbon nano-tube (CNT) yield in memory devices. SanDisk 3D, Dugan & Dugan PC, April 30, 2013: US08431417 (1 worldwide citation)

In some aspects, a method of forming a carbon nano-tube (CNT) memory cell is provided that includes (1) forming a first conductor; (2) forming a steering element above the first conductor; (3) forming a first conducting layer above the first conductor; (4) forming a CNT material above the first cond ...