1
Jaakko Niinistö
Jaakko Niinistö, Matti Putkonen, Mikko Ritala, Petri Räisänen, Antti Niskanen, Markku Leskelä: Method of depositing rare earth oxide thin films. ASM International, Knobbe Martens Olson & Bear, March 3, 2009: US07498272 (1 worldwide citation)

The present invention concerns a process for depositing rare earth oxide thin films, especially yttrium, lanthanum and gadolinium oxide thin films by an ALD process, according to which invention the source chemicals are cyclopentadienyl compounds or rare earth metals, especially those of yttrium, la ...


2
Jaakko Niinistō, Matti Putkonen, Mikko Ritala, Petri Räisänen, Antti Niskanen, Markku Leskelä: Method of depositing rare earth oxide thin films. ASM International, Knobbe Martens Olson & Bear, February 22, 2005: US06858546 (30 worldwide citation)

The present invention concerns a process for depositing rare earth oxide thin films, especially yttrium, lanthanum and gadolinium oxide thin films by an ALD process, according to which invention the source chemicals are cyclopentadienyl compounds of rare earth metals, especially those of yttrium, la ...


3
Suvi P Haukka, Antti Niskanen, Marko Tuominen: Selective formation of metallic films on metallic surfaces. ASM International, Knobbe Martens Olson & Bear, February 17, 2015: US08956971 (18 worldwide citation)

Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a ...


4
Suvi P Haukka, Antti Niskanen, Marko Tuominen: Selective formation of metallic films on metallic surfaces. ASM INTERNATIONAL, Knobbe Martens Olson & Bear, February 9, 2016: US09257303 (11 worldwide citation)

Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a ...


5
Suvi P Haukka, Antti Niskanen, Marko Tuominen: Selective formation of metallic films on metallic surfaces. ASM International, Knobbe Martens Olson & Bear, August 18, 2015: US09112003 (11 worldwide citation)

Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer o ...


6
Suvi P Haukka, Antti Niskanen, Marko Tuominen: Selective formation of metallic films on metallic surfaces. ASM INTERNATIONAL, Knobbe Martens Olson & Bear, November 22, 2016: US09502289 (8 worldwide citation)

Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer o ...


7
Noboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba: Methods for forming doped silicon oxide thin films. ASM International, Knobbe Martens Olson & Bear, March 25, 2014: US08679958 (6 worldwide citation)

The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and ...


8
Noboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba: Methods for forming doped silicon oxide thin films. ASM International, Knobbe Martens Olson & Bear, October 6, 2015: US09153441 (3 worldwide citation)

The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and ...


9
Suvi P Haukka, Antti Niskanen, Marko Tuominen: Selective formation of metallic films on metallic surfaces. ASM INTERNATIONAL, Knobbe Martens Olson & Bear, June 13, 2017: US09679808 (1 worldwide citation)

Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a ...


10
Suvi Haukka, Viljami J Pore, Antti Niskanen: Methods for depositing thin films comprising gallium nitride by atomic layer deposition. ASM IP Holding, Knobbe Martens Olson & Bear, September 30, 2014: US08846502 (1 worldwide citation)

Atomic layer deposition (ALD) processes for forming thin films comprising GaN are provided. In some embodiments, ALD processes for forming doped GaN thin films are provided. The thin films may find use, for example, in light-emitting diodes.