1
Kenneth Chang, David C Cosman, Helmut M Gartner, Anthony J Hoeg Jr: Method of forming thin film interconnection systems. International Business Machines Corporation, David M Bunnell, Thomas F Galvin, January 22, 1980: US04184909 (78 worldwide citation)

A method for forming thin film interconnection patterns atop substrates, particularly semiconductor substrates. It features the use of the passivation layer itself, typically glass, as a stable masking material to etch the conductive lines. Conversely, the metal conductor is used as a stable mask in ...


2
Anthony J Hoeg Jr, Charles T Kroll, Geoffrey B Stephens: Process for fabricating semi-conductive oxide between two poly silicon gate electrodes. International Business Machines Corporation, Joscelyn G Cockburn, July 10, 1984: US04458407 (16 worldwide citation)

A process for placing non-continuous Dual Electron Injection Structures (DEIS) between two layers of polysilicon used to form an array of poly devices on an integrated circuit substrate. Separate masks are used to define Poly 1 and Poly 2 devices, respectively. The DEIS structure is disposed above t ...