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Anil Kumar Chinthakindi, Douglas Duane Coolbaugh, Keith Edward Downes, Ebenezer E Eshun, Zhong Xiang He, Robert Mark Rassel, Anthony Kendall Stamper, Kunal Vaed: Integration of a MIM capacitor with a plate formed in a well region and with a high-k dielectric. International Business Machines Corporation, H Daniel Schnurmann, Graham S Jones II, April 22, 2008: US07361950 (9 worldwide citation)

A MIM capacitor is formed on a semiconductor substrate having a top surface and including regions formed in the surface selected from a Shallow Trench Isolation (STI) region and a doped well having exterior surfaces coplanar with the semiconductor substrate. A capacitor lower plate is either a lower ...


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Anil Kumar Chinthakindi, Douglas Duane Coolbaugh, Keith Edward Downes, Ebenezer E Eshun, Zhong Xiang He, Robert Mark Rassel, Anthony Kendall Stamper, Kunal Vaed: Method of integration of a MIM capacitor with a lower plate of metal gate material formed on an STI region or a silicide region formed in or on the surface of a doped well with a high K dielectric material. International Business Machines Corporation, H Daniel Schnurmann, Graham S Jones, March 29, 2011: US07915134 (1 worldwide citation)

A MIM capacitor is formed on a semiconductor substrate having a top surface and including regions formed in the surface selected from a Shallow Trench Isolation (STI) region and a doped well having exterior surfaces coplanar with the semiconductor substrate. A capacitor lower plate is either a lower ...


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Chinthakindi Anil Kumar, Coolbaugh Douglas Duane, Downes Keith Edward, Eshun Ebenezer, He Zhong Xiang, Rassel Robert Mark, Stamper Anthony Kendall, Vaed Kunal: Integration of a mim capacitor over a metal gate or silicide with high-k dielectric materials. International Business Machines Corporation, IBM United Kingdom, Chinthakindi Anil Kumar, Coolbaugh Douglas Duane, Downes Keith Edward, Eshun Ebenezer, He Zhong Xiang, Rassel Robert Mark, Stamper Anthony Kendall, Vaed Kunal, WILLIAMS Julian David, March 22, 2007: WO/2007/031395

A Metal Insulator-Metal (MIM) capacitor is formed on a semiconductor substrate with a base comprising a semiconductor substrate having a top surface and including regions formed in the surface selected from a Shallow Trench Isolation (STI) region and a doped well having exterior surfaces coplanar wi ...


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Barry Van Gemert, Anu Chopra, Anil Kumar: Polymerizable polyalkoxylated naphthopyrans. Transitions Optical, Frank P Mallak, Irwin M Stein, September 5, 2000: US06113814 (115 worldwide citation)

Described are novel photochromic polymerizable polyalkoxylated naphthopyran compounds, examples of which are certain 2H-naphtho[1,2-b]pyrans, 3H-naphtho[2,1-b]pyrans and indeno[2,1-f]naphtho[1,2-b]pyrans each having at least one polyalkoxylated substituent of from 1 to 50 alkoxy units per substituen ...


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Barry Van Gemert, Anil Kumar: Photochromic substituted naphthopyran compounds. Transitions Optical, Frank P Mallak, Irwin M Stein, November 14, 1995: US05466398 (113 worldwide citation)

Described are novel reversible photochromic 3H-naphtho[2,1-b]pyran compounds, of the following graphic formula: ##STR1## wherein R.sub.1 is hydrogen or alkyl, R.sub.2 is hydrogen or preferably a carboalkoxy group and R.sub.3 is hydrogen or preferably an alkyl group, provided that either R.sub.1 or R ...


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Anil Kumar, Barry Van Gemert, David B Knowles: Substituted naphthopyrans. Transitions Optical, Frank P Mallak, Irwin M Stein, October 17, 1995: US05458814 (103 worldwide citation)

Described are novel reversible photochromic naphthopyran compounds, examples of which are compounds having certain substituents at the number 5 and 6 carbon atoms of the naphtho portion of the naphthopyran and at the 2-position of the pyran ring. Certain substituents may also be present at the numbe ...


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Clara M Nelson, Anu Chopra, Olga G Petrovskaia, David B Knowles, Barry Van Gemert, Anil Kumar: Indeno-fused photochromic naphthopyrans. PPG Industries Ohio, Frank P Mallak, October 2, 2001: US06296785 (99 worldwide citation)

Described are novel photochromic indeno-fused naphthopyran compounds, examples of which include naphthopyran compounds having a substituted or unsubstituted indeno group, the 2,1 positions of which are fused to the naphtho portion of the naphthopyran as shown below. Also present on the naphthopyran ...


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Anil Kumar, David B Knowles, Barry Van Gemert: Substituted naphthopyrans. Transitions Optical, Frank P Mallak, Irwin M Stein, August 19, 1997: US05658501 (99 worldwide citation)

Described are novel reversible photochromic 2H-naphtho�1,2-b! pyran compounds, examples of which are compounds having certain substituents at the number 5 carbon atom of the naphtho-portion of the naphthopyran and at the 2-position of the pyran ring. Certain substituents may also be present at the n ...


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Anil Kumar: Benzopyran compounds. Transitions Optical, Frank P Mallak, Irwin M Stein, July 4, 1995: US05429774 (99 worldwide citation)

Described are novel reversible photochromic benzopyran compounds, examples of which are compounds having the 2,3 position of a benzofurano or benzothieno group fused to the f, g, or h side of the benzopyran, or a benzo group fused to the f side of the benzopyran, and (i) a substituted or unsubstitut ...



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