1
Eb Eshun
Anil K Chinthakindi, Douglas D Coolbaugh, Timothy J Dalton, Ebenezer E Eshun, Jeffrey P Gambino, Anthony K Stamper, Richard P Volant: Structure and method for self aligned vertical plate capacitor. International Business Machines Corporation, Cantor Colburn, Katherine Brown, March 2, 2010: US07670921 (21 worldwide citation)

A method of forming a metal-insulator-metal (MIM) capacitor includes forming a first planar dielectric layer with a first metallization layer therein; forming a first passivation layer on top thereof; forming a planar conductive layer above the first passivation layer; patterning and selectively rem ...


2
Eb Eshun
Anil K Chinthakindi, Douglas D Coolbaugh, Ebenezer E Eshun, Zhong Xiang He, Jeffrey B Johnson, Jonghae Kim, Jean Oliver Plouchart, Anthony K Stamper: Passive components in the back end of integrated circuits. International Business Machines Corporation, Anthony J Canale, August 3, 2010: US07768055 (10 worldwide citation)

Passive components are formed in the back end by using the same deposition process and materials as in the rest of the back end. Resistors are formed by connecting in series individual structures on the nth, (n+1)th, etc levels of the back end. Capacitors are formed by constructing a set of vertical ...


3
Eb Eshun
Anthony K Stamper, Anil K Chinthakindi, Douglas D Coolbaugh, Timothy J Dalton, Daniel C Edelstein, Ebenezer E Eshun, Jeffrey P Gambino, William J Murphy, Kunal Vaed: Air gap under on-chip passive device. International Business Machines Corporation, Lisa U Jaklitsch, Daryl K Neff, February 16, 2010: US07662722 (9 worldwide citation)

A method is provided for fabricating a microelectronic chip which includes a passive device such, as an inductor, overlying an air gap. In such method, a plurality of front-end-of-line (“FEOL”) devices are formed in a semiconductor region of the microelectronic chip, and a plurality of stacked inter ...


4
Eb Eshun
Daniel C Edelstein, Anil K Chinthakindi, Timothy J Dalton, Ebenezer E Eshun, Jeffrey P Gambino, Sarah L Lane, Anthony K Stamper: Integrated circuit comb capacitor. International Business Machines Corporation, Lisa U Jaklitsch, September 8, 2009: US07585722 (6 worldwide citation)

The invention is directed to an integrated circuit comb capacitor with capacitor electrodes that have an increased capacitance between neighboring capacitor electrodes as compared with other interconnects and via contacts formed in the same metal wiring level and at the same pitches. The invention a ...


5
Eb Eshun
Anil K Chinthakindi, Ebenezer E Eshun: Thin film resistor with current density enhancing layer (CDEL). International Business Machines Corporation, Scully Scott Murphy & Presser P C, Lisa U Jaklitsch, September 18, 2007: US07271700 (5 worldwide citation)

A thin film resistor device and method of manufacture includes a layer of a thin film conductor material and a current density enhancing layer (CDEL). The CDEL is an insulator material adapted to adhere to the thin film conductor material and enables the said thin film resistor to carry higher curre ...


6
Eb Eshun
Anil K Chinthakindi, Timothy J Dalton, Ebenezer E Eshun, Jeffrey P Gambino, Anthony K Stamper, Kunal Vaed: Methods of fabricating passive element without planarizing and related semiconductor device. International Business Machines Corporation, Lisa Jaklitsch, Hoffman Warnick, July 1, 2008: US07394145 (5 worldwide citation)

Methods of fabricating a passive element and a semiconductor device including the passive element are disclosed including the use of a dummy passive element. A dummy passive element is a passive element or wire which is added to the chip layout to aid in planarization but is not used in the active c ...


7
Eb Eshun
Anil K Chinthakindi, Douglas D Coolbaugh, John M Cotte, Ebenezer E Eshun, Zhong Xiang He, Anthony K Stamper, Eric J White: Integrated BEOL thin film resistor. International Business Machines Corporation, Anthony J Canale, March 8, 2011: US07902629 (4 worldwide citation)

In the course of forming a resistor in the back end of an integrated circuit, an intermediate dielectric layer is deposited and a trench etched through it and into a lower dielectric layer by a controllable amount, so that the top of a resistor layer deposited in the trench is close in height to the ...


8
Eb Eshun
Anil K Chinthakindi, Douglas D Coolbaugh, Ebenezer E Eshun, Zhong Xiang He, Jeffrey B Johnson, Jonghae Kim, Jean Oliver Plouchart, Anthony K Stamper: Passive components in the back end of integrated circuits. International Business Machines Corporation, Anthony J Canale, October 18, 2011: US08039354 (3 worldwide citation)

Passive components are formed in the back end by using the same deposition process and materials as in the rest of the back end. Resistors are formed by connecting in series individual structures on the nth, (n+1)th, etc levels of the back end. Capacitors are formed by constructing a set of vertical ...


9
Eb Eshun
Anil K Chinthakindi, Douglas D Coolbaugh, Ebenezer E Eshun, John E Florkey, Robert M Rassel, Kunal Vaed: Polysilicon containing resistor with enhanced sheet resistance precision and method for fabrication thereof. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Joseph P Abate Esq, April 6, 2010: US07691717 (3 worldwide citation)

A polysilicon containing resistor includes: (1) a p dopant selected from the group consisting of boron and boron difluoride; and (2) an n dopant selected from the group consisting of arsenic and phosphorus. Each of the p dopant and the n dopant has a dopant concentration from about 1e18 to about 1e2 ...


10
Eb Eshun
Anil K Chinthakindi, Timothy J Dalton, Ebenezer E Eshun, Jeffrey P Gambino, Anthony K Stamper, Kunal Vaed: Methods of fabricating passive element without planarizing. International Business Machines Corporation, Lisa U Jaklitsch, Hoffman Warnick & D Alessandro, September 23, 2008: US07427550 (3 worldwide citation)

Methods of fabricating a passive element and a semiconductor device including the passive element are disclosed including the use of a dummy passive element. A dummy passive element is a passive element or wire which is added to the chip layout to aid in planarization but is not used in the active c ...



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