1
Karl M J Lofgren, Robert D Norman, Gregory B Thelin, Anil Gupta: Wear leveling techniques for flash EEPROM systems. Sandisk Corporation, May 8, 2001: US06230233 (507 worldwide citation)

A mass storage system made of flash electrically erasable and programmable read only memory (“EEPROM”) cells organized into blocks, the blocks in turn being grouped into memory banks, is managed to even out the numbers of erase and rewrite cycles experienced by the memory banks in order to extend th ...


2
Robert D Norman, Karl M J Lofgren, Jeffrey D Stai, Anil Gupta, Sanjay Mehrotra: Solid state memory system including plural memory chips and a serialized bus. Sundisk Corporation, Majestic Parsons Siebert & Hsue, July 4, 1995: US05430859 (450 worldwide citation)

A memory system includes an array of solid-state memory devices which are in communication with and under the control of a controller module via a device bus with very few lines. This forms an integrated-circuit mass storage system which is contemplated to replace a mass storage system such as a dis ...


3
Karl M J Lofgren, Robert D Norman, Gregory B Thelin, Anil Gupta: Wear leveling techniques for flash EEPROM systems. Western Digital Corporation, SanDisk Corporation, Majestic Parsons Siebert & Hsue, June 27, 2000: US06081447 (339 worldwide citation)

A mass storage system made of flash electrically erasable and programmable read only memory ("EEPROM") cells organized into blocks, the blocks in turn being grouped into memory banks, is managed to even out the numbers of erase and rewrite cycles experienced by the memory banks in order to extend th ...


4
Karl M J Lofgren, Robert D Norman, Gregory B Thelin, Anil Gupta: Wear leveling techniques for flash EEPROM systems. SanDisk Corporation, Western Digital Corporation, Parsons Hsue & de Runtz, February 1, 2005: US06850443 (292 worldwide citation)

A mass storage system made of flash electrically erasable and programmable read only memory (“EEPROM”) cells organized into blocks, the blocks in turn being grouped into memory banks, is managed to even out the numbers of erase and rewrite cycles experienced by the memory banks in order to extend th ...


5
Karl M J Lofgren, Robert D Norman, Gregory B Thelin, Anil Gupta: Wear leveling techniques for flash EEPROM systems. SanDisk Corporation, Western Digital Corporation, Parsons Hsue & de Runtz, July 15, 2003: US06594183 (265 worldwide citation)

A mass storage system made of flash electrically erasable and programmable read only memory (“EEPROM”) cells organized into blocks, the blocks in turn being grouped into memory banks, is managed to even out the numbers of erase and rewrite cycles experienced by the memory banks in order to extend th ...


6
Karl M J Lofgren, Jeffrey Donald Stai, Anil Gupta, Robert D Norman, Sanjay Mehrotra: Device and method for controlling solid-state memory system. SanDisk Corporation, Western Digital Corporation, Parsons Hsue & de Runtz, March 30, 2004: US06715044 (228 worldwide citation)

A memory system includes an array of solidstate memory devices which are in communication with and under the control of a controller module via a device bus with very few lines. This forms an integrated-circuit mass storage system which is contemplated to replace a mass storage system such as a disk ...


7
Anil Gupta, Steven J Schumann: Dual buffer flash memory architecture with multiple operating modes. Atmel Corporation, D Alessandro & Ritchie, October 13, 1998: US05822245 (129 worldwide citation)

A flash memory array architecture comprising a flash memory array, first and second memory buffer, and I/O interface circuit which has several operating modes which permit data to be read from the flash memory array, several operating modes which permit data to be programmed into the flash memory ar ...


8
John S Mangan, Robert D Norman, Jeffrey Craig, Richard Albert, Anil Gupta, Jeffrey D Stai, Karl M J Lofgren: Flash EEPROM array data and header file structure. SunDisk Corporation, Western Digital Corporation, Majestic Parsons Siebert & Hsue, August 1, 1995: US05438573 (128 worldwide citation)

A file structure employed in a flash electrically erasable and programmable read only memory ("EEPROM") system and aspects of forming and using certain data fields within such a file structure. An array of rows and columns of EEPROM memory cells is divided into blocks of cells that are separately ad ...


9
John S Mangan, Robert D Norman, Jeffrey Craig, Richard Albert, Anil Gupta, Jeffrey D Stai, Karl M J Lofgren: Flash EEPROM array data and header file structure. SunDisk Corporation, Western Digital Corporation, Majestic Parsons Siebert & Hsue, November 28, 1995: US05471478 (107 worldwide citation)

A file structure employed in a flash electrically erasable and programmable read only memory ("EEPROM") system and aspects of forming and using certain data fields within such a file structure. An array of rows and columns of EEPROM memory cells is divided into blocks of cells that are separately ad ...


10
Robert D Norman, Karl M J Lofgren, Jeffrey Donald Stai, Anil Gupta, Sanjay Mehrotra: Device and method for controlling solid-state memory system. SanDisk Corporation, Western Digital Corporation, Majestic Parsons Siebert & Hsue, September 8, 1998: US05806070 (97 worldwide citation)

A memory system includes an array of solid-state memory devices which are in communication with and under the control of a controller module via a device bus with very few lines. This forms an integrated-circuit mass storage system which is contemplated to replace a mass storage system such as a dis ...