1
Eugene Fitzgerald
Andrew Y Kim, Eugene A Fitzgerald: Method of producing device quality (Al)InGaP alloys on lattice-mismatched substrates. Massachusetts Institute of Technology, Gauthier & Connors, October 19, 2004: US06805744 (4 worldwide citation)

A method of forming a semiconductor structure including providing a single crystal semiconductor substrate of GaP, and fabricating a graded composition buffer including a plurality of epitaxial semiconductor In


2
Eugene Fitzgerald
Andrew Y Kim, Eugene A Fitzgerald: Method of producing device quality (Al)InGaP alloys on lattice-mismatched substrates. Samuels Gauthier & Stevens, October 10, 2002: US20020144645-A1

A method of forming a semiconductor structure including providing a single crystal semiconductor substrate of GaP, and fabricating a graded composition buffer including a plurality of epitaxial semiconductor Inx(AlyGa1y)1xP alloy layers. The buffer includes a first alloy layer immediately contacting ...


3
Eugene Fitzgerald
Andrew Y Kim, Eugene A Fitzgerald: Method of producing device quality (a1) ingap alloys on lattice-mismatched substrates. Matthew E Connors, Samuels Gauthier & Stevens, December 6, 2001: US20010047751-A1

A method of forming a semiconductor structure including providing a single crystal semiconductor substrate of GaP, and fabricating a graded composition buffer including a plurality of epitaxial semiconductor Inx(AlyGa1-y)1-xP alloy layers. The buffer includes a first alloy layer immediately contacti ...


4
Werner K Goetz, Michael D Camras, Nathan F Gardner, R Scott Kern, Andrew Y Kim, Stephen A Stockman: Indium gallium nitride smoothing structures for III-nitride devices. Lumileds Lighting U S, Rachel V Leiterman, Patent Law Group, October 21, 2003: US06635904 (134 worldwide citation)

A smoothing structure containing indium is formed between the substrate and the active region of a III-nitride light emitting device to improve the surface characteristics of the device layers. In some embodiments, the smoothing structure is a single layer, separated from the active region by a spac ...


5
Werner K Goetz, Michael D Camras, Nathan F Gardner, R Scott Kern, Andrew Y Kim, Stephen A Stockman: Indium gallium nitride smoothing structures for III-nitride devices. LumiLeds Lighting U S, Norman R Klivans Jr, Gergely T Zimanyi, Skjerven Morrill, December 3, 2002: US06489636 (106 worldwide citation)

A smoothing structure containing indium is formed between the substrate and the active region of a III-nitride light emitting device to improve the surface characteristics of the device layers. In some embodiments, the smoothing structure is a single layer, separated from the active region by a spac ...


6
Andrew Y Kim, Steven A Maranowski: Growth of III-nitride light emitting devices on textured substrates. Philips Lumileds Lighting Company, Patent Law Group, Rachel V Leiterman, December 15, 2009: US07633097 (11 worldwide citation)

A III-nitride light emitting device is grown on a textured substrate, in order to reduce the amount of total internal reflection at the interface between the substrate and the III-nitride layers. In some embodiments, the device includes a first growth region substantially free of voids, and a second ...


7
Andrew Y Kim: Method of growing composite substrate using a relaxed strained layer. Koninklijke Philips, September 17, 2013: US08536022

A method according to embodiments of the invention includes providing an epitaxial structure comprising a donor layer and a strained layer. The epitaxial structure is treated to cause the strained layer to relax. Relaxation of the strained layer causes an in-plane lattice constant of the donor layer ...


8
Andrew Y Kim, Patrick N Grillot: Light emitting device grown on a relaxed layer. Koninklijke Philips, Philips Lumileds Lighting Company, April 8, 2014: US08692261

In some embodiments of the invention, a device includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, and a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. The second semiconductor ...


9
Werner K Goetz, Michael D Camras, Nathan F Gardner, R Scott Kern, Andrew Y Kim, Stephen A Stockman: Indium gallium nitride smoothing structures for iii-nitride devices. Skjerven Morrill, November 21, 2002: US20020171091-A1

A smoothing structure containing indium is formed between the substrate and the active region of a III-nitride light emitting device to improve the surface characteristics of the device layers. In some embodiments, the smoothing structure is a single layer, separated from the active region by a spac ...


10
Werner K Goetz, Michael D Camras, Nathan F Gardner, R Scott Kern, Andrew Y Kim, Stephen A Stockman: Indium gallium nitride smoothing structures for III-nitride devices. Skjerven Morrill, November 21, 2002: US20020171092-A1

A smoothing structure containing indium is formed between the substrate and the active region of a III-nitride light emitting device to improve the surface characteristics of the device layers. In some embodiments, the smoothing structure is a single layer, separated from the active region by a spac ...