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Ando Yuji: Data stream processing device and method, and program storage medium. Sony, August 7, 2002: EP1229690-A1 (27 worldwide citation)

The present invention provides a data stream processing apparatus which records a data stream supplied via a network. An MPEG2 partial TS and channel bandwidth information are read from a recording medium, and a bandwidth of an IEEE 1394 serial data bus is secured on the basis of the read channel ba ...


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Okamoto Yasuhiro, Miyamoto Hironobu, Ando Yuji, Nakayama Tatsuo, Inoue Takashi, Kuzuhara Masaaki: Field effect transistor. NEC, July 15, 2004: JP2004-200248 (19 worldwide citation)

PROBLEM TO BE SOLVED: To provide a transistor superior in balance of collapse and gate withstand voltage.SOLUTION: A field plate 5 overhung to a drain side in an eaves shape is formed in a gate electrode 2. A laminated layer formed of an SiN film 21 and an SiO2 film 22 is formed below the field plat ...


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Okamoto Yasuhiro, Miyamoto Hironobu, Ando Yuji, Nakayama Tatsuo, Inoue Takashi, Kuzuhara Masaaki: Field effect transistor. NEC, July 29, 2004: JP2004-214471 (18 worldwide citation)

PROBLEM TO BE SOLVED: To provide a field effect transistor excellent in a balance of collapse and gate withstand voltage.SOLUTION: An electric field control electrode 5 is formed between a gate electrode 2 and a drain electrode 3. A laminate film composed of an SiN film 21 and an SiO2 film 22 is for ...


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Ono Yasuo, Hayama Nobuyuki, Kasahara Takemoto, Nakayama Tatsumine, Miyamoto Hironobu, Takahashi Hiroyuki, Ando Yuji, Matsunaga Takaharu, Kuzuhara Masaaki: Semiconductor device. NEC, March 15, 2002: JP2002-076329 (16 worldwide citation)

PROBLEM TO BE SOLVED: To improve productivity, a heat radiating characteristic and the high speed operability of an element in a group III nitride semiconductor element.SOLUTION: An epitaxial growing layer constituted of a group III nitride semiconductor is formed on a sapphire substrate with a face ...


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Ando Yuji: Scene change adaptive video encoder. Sony, April 3, 1996: EP0705041-A2 (15 worldwide citation)

A method and apparatus for encoding a picture is provided. A plurality of input picture data are stored, and the quantity of the information of the input picture data from the plural stored picture data is evaluated for detecting a scene change. A GOP of a preset unit length, made up of a picture fo ...


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Ando Yuji: Heterojunction field effect transistor. NEC, August 11, 2000: JP2000-223697 (13 worldwide citation)

PROBLEM TO BE SOLVED: To provide an HJFET structure in which a depletion type FET and enhancement type FET can be fabricated separately by improving the controllability of threshold voltage. SOLUTION: In a heterojunction field effect transistor having a substrate 10, a buffer layer 11 including at l ...


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Kasahara Takemoto, Ono Yasuo, Kuzuhara Masaaki, Miyamoto Hironobu, Ando Yuji, Nakayama Tatsumine, Kunihiro Kazuaki, Hayama Nobuyuki, Takahashi Hiroyuki, Matsunaga Takaharu: Semiconductor device. NEC, January 18, 2002: JP2002-016245 (13 worldwide citation)

PROBLEM TO BE SOLVED: To form a desired device structure by producing a two-dimensional distribution profile of electrons, which is to become carriers in a horizontal plane vertical to the layer thickness direction: for example, the realize a low contact resistance by increasing a channel density in ...


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Miyamoto Hironobu, Ando Yuji, Okamoto Yasuhiro, Nakayama Tatsuo, Inoue Takashi, Ota Kazuki, Wakejima Akio, Kasahara Kensuke, Murase Yasuhiro, Matsunaga Kohji, Yamanoguchi Katsumi, Shimawaki Hidenori: Field effect transistor. Nippon Electric Co, March 19, 2008: EP1901341-A1 (12 worldwide citation)

The present invention provides a field effect transistor exhibiting a good performance at high voltage operation as well as a high frequency characteristic. In the present invention, in a field effect transistor (100) comprising a first field plate electrode (116) and a second field plate electrode ...


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Miyamoto Hironobu, Ando Yuji, Okamoto Yasuhiro, Nakayama Tatsuo, Inoue Takashi, Ota Kazuki, Wakejima Akio, Kasahara Kensuke, Murase Yasuhiro, Matsunaga Kohji, Yamanoguchi Katsumi, Shimawaki Hidenori: Field effect transistor. Nippon Electric Co, March 19, 2008: EP1901342-A1 (11 worldwide citation)

The present invention provides a field effect transistor both exhibiting an excellent performance at high voltage operation as well as a high frequency characteristic. In the present invention, a field effect transistor comprises a layer structure made of compound semiconductor (111) provided on a s ...