1
Bikram Kapoor, M Ziaul Karim, Anchuan Wang: Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology. Applied Materials, Townsend and Townsend & Crew, October 26, 2004: US06808748 (150 worldwide citation)

A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a hi ...


2
Hemant P Mungekar, Anjana M Patel, Manoj Vellaikal, Anchuan Wang, Bikram Kapoor: Reactive ion etching for semiconductor device feature topography modification. Applied Materials, Townsend and Townsend and Crew, December 8, 2009: US07628897 (125 worldwide citation)

A film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a trench formed between adjacent raised surfaces. A first portion of the film is deposited over the substrate from a first gaseous mixture flowed into the process chamber by chemical-vapor deposition. Th ...


3
Zhijun Chen, Zihui Li, Anchuan Wang, Nitin K Ingle, Shankar Venkataraman: Selective etch of silicon nitride. Applied Materials, Kilpatrick Townsend & Stockton, February 17, 2015: US08956980 (107 worldwide citation)

A method of etching silicon nitride on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a nitrogen-and-oxygen-containing precursor. Plasma effluents from two remote plasmas are flowed into a substrate processing region ...


4
Yunyu Wang, Anchuan Wang, Jingchun Zhang, Nitin K Ingle, Young S Lee: Dry-etch for silicon-and-nitrogen-containing films. Applied Materials, Kilpatrick Townsend & Stockton, February 4, 2014: US08642481 (90 worldwide citation)

A method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrat ...


5
Jie Liu, Xikun Wang, Seung Park, Mikhail Korolik, Anchuan Wang, Nitin K Ingle: Tungsten oxide processing. Applied Materials, Kilpatrick Townsend & Stockton, February 10, 2015: US08951429 (87 worldwide citation)

Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor in combination with ammonia (NH3). Plasma effluents fr ...


6
Xikun Wang, Anchuan Wang, Nitin K Ingle, Dmitry Lubomirsky: Selective titanium nitride removal. Applied Materials, Kilpatrick Townsend & Stockton, May 26, 2015: US09040422 (86 worldwide citation)

Methods are described herein for selectively etching titanium nitride relative to dielectric films, which may include, for example, alternative metals and metal oxides lacking in titanium and/or silicon-containing films (e.g. silicon oxide, silicon carbon nitride and low-K dielectric films). The met ...


7
Sang Hyuk Kim, Dongqing Yang, Young S Lee, Weon Young Jung, Sang jin Kim, Ching Mei Hsu, Anchuan Wang, Nitin K Ingle: Dry-etch for selective oxidation removal. Applied Materials, Kilpatrick Townsend & Stockton, June 23, 2015: US09064816 (86 worldwide citation)

Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into ...


8
Anchuan Wang, Jingchun Zhang, Nitin K Ingle, Young S Lee: Selective etch of silicon by way of metastable hydrogen termination. Applied Materials, Kilpatrick Townsend & Stockton, August 19, 2014: US08808563 (86 worldwide citation)

Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the pla ...


9
Yunyu Wang, Anchuan Wang, Jingchun Zhang, Nitin K Ingle, Young S Lee: Selective suppression of dry-etch rate of materials containing both silicon and oxygen. Applied Materials, Kilpatrick Townsend & Stockton, March 25, 2014: US08679982 (86 worldwide citation)

A method of suppressing the etch rate for exposed silicon-and-oxygen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. Examples of materials whose selectivity is increased using this technique include silicon nitride and silicon. The ...


10
Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching Mei Hsu, Jiayin Huang, Nitin K Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur: Processing systems and methods for halide scavenging. Applied Materials, Kilpatrick Townsend & Stockton, May 5, 2015: US09023732 (85 worldwide citation)

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional proc ...