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Ana Londergan
Ion Bita, Evgeni Gousev, Ana Londergan, Xiaoming Yan: Etching processes used in mems production. Qualcomm MEMS Technologies, Knobbe Martens Olson & Bear, April 23, 2009: US20090101623-A1

The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. ...


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Alain E Kaloyeros, Ana Londergan, Barry Arkles: Method of interlayer mediated epitaxy of cobalt silicide from low temperature chemical vapor deposition of cobalt. Research Foundation of SUNY New York, Heslin Rothenberg Farley & Mesiti P C, February 12, 2002: US06346477 (113 worldwide citation)

A process for the preparation of cobalt disilicide films comprises chemical vapor deposition (CVD) of cobalt from cobalt tricarbonyl nitrosyl as cobalt source precursor, capping the cobalt layer and annealing to form epitaxial cobalt disilicide on the silicon substrate.


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Ion Bita, Evgeni Gousev, Ana Londergan, Xiaoming Yan: Etching processes used in MEMS production. QUALCOMM MEMS Technologies, Knobbe Martens Olson & Bear, December 4, 2012: US08323516

The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. ...