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Quanxi Jia, Alp T Findikoglu: Formation of nonlinear dielectric films for electrically tunable microwave devices. The Regents of the Universitiy of California, Bruce H Cottrell, April 4, 2000: US06045932 (75 worldwide citation)

A thin film structure including a lanthanum aluminum oxide substrate, a thin layer of homoepitaxial lanthanum aluminum oxide thereon, and a layer of a nonlinear dielectric material thereon the thin layer of homoepitaxial lanthanum aluminum oxide is provided together with microwave and electro-optica ...


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Alp T Findikoglu, Thirumalai Venkatesan: Superconductor/insulator metal oxide hetero structure for electric field tunable microwave device. University of Maryland, Foley & Lardner, July 23, 1996: US05538941 (26 worldwide citation)

A superconductor/insulator metal oxide hetero structure for electric field tunable microwave device, including a dielectric substrate, a first superconducting electrode of an oxide superconductor provided on said dielectric substrate, an insulating layer formed on the first superconducting electrode ...


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Alp T Findikoglu: Localized electrical fine tuning of passive microwave and radio frequency devices. The Regents of the University of California, Milton D Wyrick, April 10, 2001: US06216020 (25 worldwide citation)

A method and apparatus for the localized electrical fine tuning of passive multiple element microwave or RF devices in which a nonlinear dielectric material is deposited onto predetermined areas of a substrate containing the device. An appropriate electrically conductive material is deposited over p ...


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Alp T Findikoglu, Takao Nakamura: Joint device including superconductive probe-heads for capacitive microwave coupling. Sumitomo Electric, University of Maryland, Foley & Lardner, August 6, 1996: US05543386 (10 worldwide citation)

A joint device structure for capacitive microwave coupling of a superconducting device arranged on a substrate with room temperature circuitry; including a superconducting wave guide of an oxide superconductor on said substrate from one side to the superconducting device launching microwave to the s ...


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Alp T Findikoglu, Michitomo Iiyama: Superconducting active lumped component for microwave device application. Sumitomo Electric, University of Maryland, Foley & Lardner, February 18, 1997: US05604375 (8 worldwide citation)

A superconducting active lumped component for microwave device application including a dielectric substrate, a first superconducting portion of an oxide superconductor provided on said dielectric substrate, an insulator layer formed on the first superconducting portion and a second conductive portio ...


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Alp T Findikoglu, Quanxi Jia, Paul N Arendt, Vladimir Matias, Woong Choi: Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate. Los Alamos National Security, Bruce H Cottrell, Samuel L Borkowsky, Holly L Teeter, October 27, 2009: US07608335 (5 worldwide citation)

A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the bas ...


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Alp T Findikoglu, Vladimir Matias: Conductive layer for biaxially oriented semiconductor film growth. Los Almos National Security, Robert P Santandrea, Holly L Teeter, October 30, 2007: US07288332 (4 worldwide citation)

A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. ...


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Alp T Findikoglu: Aligned crystalline semiconducting film on a glass substrate and method of making. Los Alamos National Security, Robert P Santandrea, Samuel L Borkowsky, August 24, 2010: US07781067

A semiconducting structure having a glass substrate. In one embodiment, the glass substrate has a softening temperature of at least about 750° C. The structure includes a nucleation layer formed on a surface of the substrate, a template layer deposited on the nucleation layer by one of ion assisted ...


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Quanxi Jia, Brady J Gibbons, Alp T Findikoglu, Bae Ho Park: Thin film dielectric composite materials. Bruce H Cottrell, Los Alamos National Laboratory, August 22, 2002: US20020114957-A1

A dielectric composite material comprising at least two crystal phases of different components with TiO2 as a first component and a material selected from the group consisting of Ba1xSrxTiO3 where x is from 0.3 to 0.7, Pb1xCaxTiO3 where x is from 0.4 to 0.7, Sr1xPbxTiO3 where x is from 0.2 to 0.4, B ...



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