1
Katherina Babich
Katherina E Babich, Alessandro Cesare Callegari, Julien Fontaine, Alfred Grill, Christopher V Jahnes, Vishnubhai Vitthalbhai Patel: Tunable and removable plasma deposited antireflective coatings. International Business Machines Corporation, Thomas A Beck, Daniel P Morris, August 6, 2002: US06428894 (63 worldwide citation)

Disclosed is vapor deposited BARC and method of preparing tunable and removable antireflective coatings based on amorphous carbon films. These films can be hydrogenated, fluorinated, nitrogenated carbon films. Such films have an index of refraction and an extinction coefficient tunable from about 1. ...


2
Katherina Babich
Marie Angelopoulos, Katherina Babich, Alfred Grill, Scott David Halle, Arpan Pravin Mahorowala, Vishnubhai Vitthalbhai Patel: Tunable vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and applications thereof. International Business Machines Corporation, Daniel P Morris, February 4, 2003: US06514667 (53 worldwide citation)

A lithographic structure and method of fabrication and use thereof having a plurality of layers at least one of which is a an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and ...


3
Katherina Babich
Katherina E Babich, Roy Arthur Carruthers, Timothy Joseph Dalton, Alfred Grill, Jeffrey Curtis Hedrick, Christopher Vincent Jahnes, Ebony Lynn Mays, Laurent Perraud, Sampath Purushothaman, Katherine Lynn Saenger: Multilayer interconnect structure containing air gaps and method for making. International Business Machines Corporation, Robert M Trepp, Scully Scott Murphy & Presser, November 9, 2004: US06815329 (41 worldwide citation)

A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming such an interconnect structure. The method is readily scalable to ...


4
Katherina Babich
Katherina Babich, Alessandro Callegari, Stephen Alan Cohen, Alfred Grill, Christopher Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Sampath Purushothaman, Katherine Lynn Saenger: Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation. International Business Machines Corporation, Robert M Trepp, Scully Scott Murphy & Presser, September 10, 2002: US06448655 (21 worldwide citation)

A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes th ...


5
Katherina Babich
Katherina E Babich, Roy Arthur Carruthers, Timothy Joseph Dalton, Alfred Grill, Jeffrey Curtis Hedrick, Christopher Vincent Jahnes, Ebony Lynn Mays, Laurent Perraud, Sampath Purushothaman, Katherine Lynn Saenger: Multilayer interconnect structure containing air gaps and method for making. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Robert M Trepp Esq, August 29, 2006: US07098476 (18 worldwide citation)

A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming such an interconnect structure. The method is readily scalable to ...


6
Katherina Babich
Katherina Babich, Alessandro Callegari, Stephen Alan Cohen, Alfred Grill, Christopher Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Sampath Purushothaman, Katherine Lynn Saenger: Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation. International Business Machines Corporation, Robert M Trepp Esq, Scully Scott Murphy & Presser, July 6, 2004: US06759321 (11 worldwide citation)

A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes th ...


7
Katherina Babich
Katherina E Babich, Alfred Grill, Arpan P Mahorowala, Dirk P Pfeiffer: Water and aqueous base soluble antireflective coating/hardmask materials. International Business Machines Corporation, Ohlandt Greeley Ruggiero & Perle L, February 13, 2007: US07175966 (5 worldwide citation)

A multilayer lithographic structure which includes a substrate, having on a major surface thereof a first layer including a water and/or aqueous base soluble material which includes Ge, O, and H, and optionally X, wherein X is at least one of Si, N, and F; and disposed on the first layer a second la ...


8
Katherina Babich
Katherina E Babich, Roy Arthur Carruthers, Timothy Joseph Dalton, Alfred Grill, Jeffrey Curtis Hedrick, Christopher Vincent Jahnes, Ebony Lynn Mays, Laurent Perraud, Sampath Purushothaman, Katherine Lynn Saenger: Multilayer interconnect structure containing air gaps and method for making. Robert M Trepp, IBM Corporation, October 31, 2002: US20020158337-A1 (4 worldwide citation)

A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming such an interconnect structure. The method is readily scalable to ...


9
Katherina Babich
Katherina E Babich, Alfred Grill, Arpan P Mahorowala, Dirk P Pfeiffer: Water and aqueous base soluble antireflective coating/hardmask materials. Paul D Greeley Esq, Ohlandt Greeley Ruggiero & Perle, March 24, 2005: US20050064322-A1

A multilayer lithographic structure which includes a substrate, having on a major surface thereof a first layer including a water and/or aqueous base soluble material which includes Ge, O, and H, and optionally X, wherein X is at least one of Si, N, and F; and disposed on the first layer a second la ...


10
Katherina Babich
Katherina Babich, Alessandro Callegari, Stephen Alan Cohen, Alfred Grill, Christopher Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Sampath Purushothaman, Katherine Lynn Saenger: Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation. Robert M Trepp, Intellectual Property Law Department, March 21, 2002: US20020033535-A1

A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes th ...