1
Robin Mark Adrian Dawson, Michael Gillis Kane, James Ya Kong Hsu, Fu Lung Hsueh, Alfred Charles Ipri, Roger Green Stewart: Active matrix light emitting diode pixel structure and concomitant method. Sarnoff Corporation, William J Burke, May 8, 2001: US06229506 (665 worldwide citation)

A LED pixel structure that reduces current nonuniformities and threshold voltage variations in a “drive transistor”of the pixel structure is disclosed. The LED pixel structure incorporates a current source for loading data into the pixel via a data line. Alternatively, an auto zero voltage is determ ...


2
Roger Green Stewart, Alfred Charles Ipri: Active matrix organic light emitting diode (amoled) display pixel structure and data load/illuminate circuit therefor. Sarnoff Corporation, William J Burke, September 14, 1999: US05952789 (350 worldwide citation)

A pixel structure for use in a display using organic light emitting diodes (O-LEDs) is described. Each pixel structure of an overall array includes an organic light emitting diode (O-LED). Additionally, the structure includes circuitry for allowing the structure to operate in three basic modes: writ ...


3
Robin Mark Adrian Dawson, Zilan Shen, Alfred Charles Ipri, Roger Green Stewart, Michael Gillis Kane: Thin-film transistor circuitry with reduced sensitivity to variance in transistor threshold voltage. Sarnoff Corporation, William J Burke, October 23, 2001: US06307322 (215 worldwide citation)

A circuit design technique polysilicon thin-film transistor (TFT) circuitry produces circuits that are relatively less sensitive to threshold variations among the TFT's than circuits designed using conventional techniques. The circuit is designed such that thin-film transistors that are sensiti ...


4
Robin Mark Adrian Dawson, Zilan Shen, Alfred Charles Ipri, Roger Green Stewart, James Harold Atherton, Stephen John Connor: Line scanning circuit for a dual-mode display. Sarnoff Corporation, William J Burke, February 19, 2002: US06348906 (66 worldwide citation)

A row-select circuit for an organic light emitting diode display propagates a gating pulse through a shift register. This gating pulse is synchronized with a system clock signal and is used to selectively apply a plurality of broadcast control signals to a selected row of pixels on the display. The ...


5
Fu Lung Hseuh, Alfred Charles Ipri, Gary Mark Dolny, Roger Green Stewart: High-voltage transistor. Sarnoff Corporation, William J Burke, August 3, 1999: US05932892 (40 worldwide citation)

In an active matrix electroluminescent display, a pixel containing a grounded conductive electric field shield between an EL cell and the switching electronics for the EL cell. In a method of fabricating the pixel, first, an EL cell switching circuit is formed, then an insulating layer is formed ove ...


6
Alfred Charles Ipri, Joseph Hurlong Scott, John Carl Sarace: IGFET on an insulating substrate. RCA Corporation, H Christoffersen, Robert P Williams, Thomas H Magee, August 10, 1976: US03974515 (26 worldwide citation)

The breakdown voltage of a novel insulated gate field effect transistor (IGFET), comprising silicon on sapphire (SOS), is substantially doubled by a novel structure wherein a dielectric layer, formed over a channel region of the IGFET, also extends continuously over the surface of the sapphire on op ...


7
Alfred Charles Ipri, John Carl Sarace: Semiconductor device and method of electrically isolating circuit components thereon. RCA Corporation, H Christoffersen, R P Williams, T H Magee, July 12, 1977: US04035829 (25 worldwide citation)

An integrated circuit device comprises a layer of semiconductor material on an insulating substrate. At least two spaced-apart circuit components, such as field-effect transistors, are formed in the layer of semiconductor material. The circuit components are electrically isolated from each other by ...


8
Fu Lung Hsueh, Alfred Charles Ipri: Switching circuitry layout for an active matrix electroluminescent display pixel with each pixel provided with the transistors. Sarnoff Corporation, William J Burke, August 15, 2000: US06104041 (20 worldwide citation)

In an active matrix electroluminescent display, a pixel containing a electroluminescent cell and the switching electronics for the electroluminescent cell where said switching electronics contains two transistors, a low voltage MOS transistor and a high voltage MOS transistor. A low voltage transist ...


9
Alfred Charles Ipri, Joseph Hurlong Scott Jr: Integrated circuit structure and method for making same. RCA, H Christoffersen, Sanford J Asman, October 10, 1978: US04119992 (16 worldwide citation)

The integrated circuit is manufactured upside down relative to conventional silicon-on-sapphire (SOS) processing techniques for manufacturing field effect transistors. First a conductive pattern, typically of a refractory metal, is deposited and defined on an insulating substrate, such as sapphire, ...


10
Alfred Charles Ipri: Silicon implanted and bombarded with phosphorus ions. RCA, H Christoffersen, D S Cohen, Benjamin, May 30, 1978: US04092209 (14 worldwide citation)

A composition of matter produced by a process wherein silicon is bombarded by phosphorus ions and phosphorus ions are implanted therein. A method for rendering silicon substantially unetchable in a potassium hydroxide etchant by implanting phosphorus in the silicon by brombardment with phosphorus io ...