1
Ravi Laxman
Chongying Xu, Thomas H Baum, Alexander S Borovik, Ziyun Wang, James T Y Lin, Scott Battle, Ravi K Laxman: Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films. Advanced Technology Materials, Steven J Hultquist, Intellectual Property Technology Law, Margaret Chappuis, September 19, 2006: US07108771 (11 worldwide citation)

A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films hav ...


2
Ravi Laxman
Tianniu Chen, Chongying Xu, Thomas H Baum, Ravi K Laxman, Alexander S Borovik: Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films. Advanced Technology Materials, Steven J Hultquist, Intellectual Property Technology Law, Maggie Chappuis, September 9, 2008: US07423166 (2 worldwide citation)

A siloxane dielectric precursor for use in a chemical vapor deposition (CVD) process, which has been dosed with a stabilizing agent(s) selected from free-radical inhibitors, end-capping agents and mixtures thereof. The stabilized siloxane dielectric precursor reduces the occurrence of premature depo ...


3
Ravi Laxman
Tianniu Chen, Chongying Xu, Thomas H Baum, Ravi K Laxman, Alexander S Borovik: Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films. Atmi, February 26, 2004: US20040039219-A1 (2 worldwide citation)

A siloxane dielectric precursor for use in a chemical vapor deposition (CVD) process, which has been dosed with a stabilizing agent(s) selected from free-radical inhibitors, end-capping agents and mixtures thereof. The stabilized siloxane dielectric precursor reduces the occurrence of premature depo ...


4
Ravi Laxman
Chongying Xu, Thomas H Baum, Alexander S Borovik, Ziyun Wang, James TY Lin, Scott Battle, Ravi K Laxman: Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films. Intellectual Property Technology Law, June 26, 2003: US20030116421-A1 (1 worldwide citation)

A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films hav ...


5
Ravi Laxman
Chongying Xu, Thomas H Baum, Alexander S Borovik, Ziyun Wang, James TY Lin, Scott Battle, Ravi K Laxman: Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films. Intellectual Property Technology Law, October 19, 2006: US20060235182-A1

A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films hav ...


6
Alexander S Borovik, Ziyun Wang, Chongying Xu, Thomas H Baum, Brian L Benac: Silicon source reagent compositions, and method of making and using same for microelectronic device structure. Advanced Technology Materials, Maggie Chappuis, Tristan A Fuierer, John Boyd, August 1, 2006: US07084080 (8 worldwide citation)

A method of synthesizing an aminosilane source reagent composition, by reacting an aminosilane precursor compound with an amine source reagent compound in a solvent medium comprising at least one activating solvent component, to yield an aminosilane source reagent composition having less than 1000 p ...


7
Alexander S Borovik, Ziyun Wang, Chongying Xu, Thomas H Baum: Method for trace water analysis in cyclic siloxanes useful as precursors for low dielectric constant thin films. Advanced Technology Materials, Steven J Hultquist, Intellectual Property Technology Law, Magaret Chappuis, March 13, 2007: US07189571 (2 worldwide citation)

An analytical technique for the accurate and precise measurement of trace water in chemical reagents, comprising the steps of combining a chemical reagent comprising ≦5 ppm water, with hexafluoroacetone (HFA), to form a sample mixture comprising at least the chemical reagent and a water derivative o ...


8
Alexander S Borovik, Chongying Xu, Thomas H Baum, Steven Bilodeau, Jeffrey F Roeder, Abigail Ebbing, Daniel Vestyck: Ethyleneoxide-silane and bridged silane precursors for forming low k films. Advanced Technology Materials, Steven J Hultquist, Intellectual Property Technology Law, April 4, 2006: US07022864 (2 worldwide citation)

An organosilicon precursor for vapor deposition, e.g., low pressure (<100 Torr), plasma-enhanced chemical vapor deposition (PECVD) of a low k, high strength dielectric film, wherein the precursor includes at least one of: (i) silicon-pendant oxiranyl functionality; and (ii) a disilyl moiety of the f ...


9
Chongying Xu, Alexander S Borovik, Thomas H Baum: Porogen material. Advanced Technology Materials, Steven J Hultquist, Intellectual Property Technology Law, Maggie Chappuis, March 11, 2008: US07342295 (1 worldwide citation)

A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film as well as semico ...


10
Alexander S Borovik, Shiu Chin H Su: Method of applying an anti-corrosion and/or adhesion promoting coating to a metal and resulting coated metal. Momentive Performance Materials, Dominick G Vicari, Joseph S Ostroff, January 25, 2011: US07875318 (1 worldwide citation)

A method of coating at least a portion of the exposed surface of a metal comprises: a) applying to said surface a curable coating composition comprising an aqueous solution of at least one partially or substantially completely hydrolyzed, and optionally partially condensed, silane possessing one or ...



Click the thumbnails below to visualize the patent trend.