1
Ravi Laxman
Chongying Xu, Thomas H Baum, Alexander S Borovik, Ziyun Wang, James T Y Lin, Scott Battle, Ravi K Laxman: Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films. Advanced Technology Materials, Steven J Hultquist, Intellectual Property Technology Law, Margaret Chappuis, September 19, 2006: US07108771 (11 worldwide citation)

A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films hav ...


2
Ravi Laxman
Tianniu Chen, Chongying Xu, Thomas H Baum, Ravi K Laxman, Alexander S Borovik: Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films. Advanced Technology Materials, Steven J Hultquist, Intellectual Property Technology Law, Maggie Chappuis, September 9, 2008: US07423166 (2 worldwide citation)

A siloxane dielectric precursor for use in a chemical vapor deposition (CVD) process, which has been dosed with a stabilizing agent(s) selected from free-radical inhibitors, end-capping agents and mixtures thereof. The stabilized siloxane dielectric precursor reduces the occurrence of premature depo ...


3
Ravi Laxman
Tianniu Chen, Chongying Xu, Thomas H Baum, Ravi K Laxman, Alexander S Borovik: Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films. Atmi, February 26, 2004: US20040039219-A1 (2 worldwide citation)

A siloxane dielectric precursor for use in a chemical vapor deposition (CVD) process, which has been dosed with a stabilizing agent(s) selected from free-radical inhibitors, end-capping agents and mixtures thereof. The stabilized siloxane dielectric precursor reduces the occurrence of premature depo ...


4
Ravi Laxman
Chongying Xu, Thomas H Baum, Alexander S Borovik, Ziyun Wang, James TY Lin, Scott Battle, Ravi K Laxman: Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films. Intellectual Property Technology Law, June 26, 2003: US20030116421-A1 (1 worldwide citation)

A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films hav ...


5
Ravi Laxman
Chongying Xu, Thomas H Baum, Alexander S Borovik, Ziyun Wang, James TY Lin, Scott Battle, Ravi K Laxman: Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films. Intellectual Property Technology Law, October 19, 2006: US20060235182-A1

A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films hav ...


6
Alexander S Borovik, Ziyun Wang, Chongying Xu, Thomas H Baum, Brian L Benac: Silicon source reagent compositions, and method of making and using same for microelectronic device structure. Advanced Technology Materials, Maggie Chappuis, Tristan A Fuierer, John Boyd, August 1, 2006: US07084080 (8 worldwide citation)

A method of synthesizing an aminosilane source reagent composition, by reacting an aminosilane precursor compound with an amine source reagent compound in a solvent medium comprising at least one activating solvent component, to yield an aminosilane source reagent composition having less than 1000 p ...


7
Alexander S Borovik, Shiu Chin H Su: Method of applying an anti-corrosion and/or adhesion promoting coating to a metal and resulting coated metal. Momentive Performance Materials, Dominick G Vicari, Joseph S Ostroff, January 25, 2011: US07875318 (2 worldwide citation)

A method of coating at least a portion of the exposed surface of a metal comprises: a) applying to said surface a curable coating composition comprising an aqueous solution of at least one partially or substantially completely hydrolyzed, and optionally partially condensed, silane possessing one or ...


8
Alexander S Borovik, Ziyun Wang, Chongying Xu, Thomas H Baum: Method for trace water analysis in cyclic siloxanes useful as precursors for low dielectric constant thin films. Advanced Technology Materials, Steven J Hultquist, Intellectual Property Technology Law, Magaret Chappuis, March 13, 2007: US07189571 (2 worldwide citation)

An analytical technique for the accurate and precise measurement of trace water in chemical reagents, comprising the steps of combining a chemical reagent comprising ≦5 ppm water, with hexafluoroacetone (HFA), to form a sample mixture comprising at least the chemical reagent and a water derivative o ...


9
Alexander S Borovik, Chongying Xu, Thomas H Baum, Steven Bilodeau, Jeffrey F Roeder, Abigail Ebbing, Daniel Vestyck: Ethyleneoxide-silane and bridged silane precursors for forming low k films. Advanced Technology Materials, Steven J Hultquist, Intellectual Property Technology Law, April 4, 2006: US07022864 (2 worldwide citation)

An organosilicon precursor for vapor deposition, e.g., low pressure (<100 Torr), plasma-enhanced chemical vapor deposition (PECVD) of a low k, high strength dielectric film, wherein the precursor includes at least one of: (i) silicon-pendant oxiranyl functionality; and (ii) a disilyl moiety of the f ...


10
Chongying Xu, Alexander S Borovik, Thomas H Baum: Porogen material. Advanced Technology Materials, Steven J Hultquist, Intellectual Property Technology Law, Maggie Chappuis, March 11, 2008: US07342295 (1 worldwide citation)

A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film as well as semico ...



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