1
Jun Zhao, Tom Cho, Charles Dornfest, Stefan Wolff, Kevin Fairbairn, Xin S Guo, Alex Schreiber, John M White: CVD Processing chamber. Applied Materials, Janis Biksa, September 24, 1996: US05558717 (354 worldwide citation)

A process chamber is disclosed which provides a 360.degree. circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly. The substrate faces a one-piece gas distribution faceplate being connected to ...


2
Jun Zhao, Ashok Sinha, Avi Tepman, Mei Chang, Lee Luo, Alex Schreiber, Talex Sajoto, Stefan Wolff, Charles Dornfest, Michal Danek: Thermally floating pedestal collar in a chemical vapor deposition chamber. Applied Materials, Charles S Guenzer, Michael B Einschlag, December 8, 1998: US05846332 (195 worldwide citation)

A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material on peripheral portions of the pedestal sup ...


3
Jun Zhao, Alex Schreiber: Faceplate thermal choke in a CVD plasma reactor. Applied Materials, Charles S Guenzer, March 16, 1999: US05882411 (86 worldwide citation)

A reactor for plasma-enhanced chemical vapor deposition having a showerhead electrode facing the wafer being CVD deposited, the showerhead having a large number of jetting holes for jetting processing gas towards the wafer. Two deep grooves are formed around the area of the showerhead containing the ...


4
Jun Zhao, Ashok Sinha, Avi Tepman, Mei Chang, Lee Luo, Alex Schreiber, Talex Sajoto, Stefan Wolff, Charles Dornfest, Michal Danek: Apparatus for substrate processing with improved throughput and yield. Applied Materials, Townsend and Townsend and Crew, October 10, 2000: US06129044 (84 worldwide citation)

The present invention provides an approach which provides an increase in the number of usable substrates with a film, such as titanium nitride, deposited thereon at a sufficient deposition rate and where the film meets uniformity and resistivity specifications as well as providing good step coverage ...


5
Jun Zhao, Tom Cho, Charles Dornfest, Stefan Wolff, Kevin Fairbairn, Xin Sheng Guo, Alex Schreiber, John M White: CVD processing chamber. Applied Materials, Peters Verney Jones & Biksa, December 29, 1998: US05853607 (56 worldwide citation)

A process chamber is disclosed which provides a 360.degree. circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly. The substrate faces a one-piece gas distribution faceplate being connected to ...


6
Jun Zhao, Tom Cho, Xin Sheng Guo, Atsushi Tabata, Jianmin Qiao, Alex Schreiber: Method of reducing residue accumulation in CVD chamber using ceramic lining. Applied Materials, Townsend & Townsend & Crew, March 23, 1999: US05885356 (55 worldwide citation)

The present invention provides a method and apparatus for limiting residue build-up by lining with a ceramic material the exhaust plenun and exhaust manifold of a processing chamber. In another aspect of the invention, the inventors have used an air gap between the ceramic liner and the processing c ...


7
Jun Zhao, Ashok Sinha, Avi Tepman, Mei Chang, Lee Luo, Alex Schreiber, Talex Sajoto, Stefan Wolff, Charles Dornfest, Michal Danek: Removable pumping channel liners within a chemical vapor deposition chamber. Applied Materials, Charles S Guenzer, October 12, 1999: US05964947 (29 worldwide citation)

A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material in a pumping channel exhausting the chambe ...


8
Harald Herchen, David Palagashvili, Dmitry Lubomirsky, Alex Schreiber: Gas distribution plate. Applied Materials, Joseph Bach, Moser Patterson & Sheridan, September 3, 2002: US06444040 (18 worldwide citation)

An apparatus for use in a substrate processing system. The apparatus is generally a fluid distribution plate comprising an inner disk and an outer ring. The fluid distribution plate has a plurality of openings for fluid distribution and at least one slot defined therein.


9
Jun Zhao, Ashok Sinha, Avi Tepman, Mei Chang, Lee Luo, Alex Schreiber, Talex Sajoto, Stefan Wolff, Charles Dornfest, Michal Danek: Plasma treatment of titanium nitride formed by chemical vapor deposition. Applied Materials, Charles S Guenzer Esq, August 7, 2001: US06270859 (17 worldwide citation)

A method of depositing titanium nitride by chemical vapor deposition in a chamber having several design features directed to the conductive nature of titanium nitride, particularly when a plasma treatment step is performed after the thermal deposition of the film. Preferably, during the post-deposit ...


10
Jun Zhao, Ashok Sinha, Avi Tepman, Mei Chang, Lee Luo, Alex Schreiber, Talex Sajoto, Stefan Wolff, Charles Dornfest, Michal Danek: Plasma treatment of titanium nitride formed by chemical vapor deposition. Applied Materials, June 21, 2001: US20010004478-A1

A method of depositing titanium nitride by chemical vapor deposition in a chamber having several design features directed to the conductive nature of titanium nitride, particularly when a plasma treatment step is performed after the thermal deposition of the film. Preferably, during the post-deposit ...