1
Katherina Babich
Katherina Babich, Alessandro Callegari, Stephen Alan Cohen, Alfred Grill, Christopher Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Sampath Purushothaman, Katherine Lynn Saenger: Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation. International Business Machines Corporation, Robert M Trepp, Scully Scott Murphy & Presser, September 10, 2002: US06448655 (21 worldwide citation)

A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes th ...


2
Katherina Babich
Katherina Babich, Alessandro Callegari, Stephen Alan Cohen, Alfred Grill, Christopher Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Sampath Purushothaman, Katherine Lynn Saenger: Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation. International Business Machines Corporation, Robert M Trepp Esq, Scully Scott Murphy & Presser, July 6, 2004: US06759321 (11 worldwide citation)

A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes th ...


3
Katherina Babich
Katherina Babich, Alessandro Callegari, Zhihong Chen, Edward Kiewra, Yanning Sun: Method to improve nucleation of materials on graphene and carbon nanotubes. International Business Machines Corporation, Vazken Alexanian, Michael J Chang, August 26, 2014: US08816333 (1 worldwide citation)

Techniques for forming a thin coating of a material on a carbon-based material are provided. In one aspect, a method for forming a thin coating on a surface of a carbon-based material is provided. The method includes the following steps. An ultra thin silicon nucleation layer is deposited to a thick ...


4
Katherina Babich
Katherina Babich, Alessandro Callegari, Stephen Alan Cohen, Alfred Grill, Christopher Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Sampath Purushothaman, Katherine Lynn Saenger: Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation. Robert M Trepp, Intellectual Property Law Department, March 21, 2002: US20020033535-A1

A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes th ...


5
Katherina Babich
Katherina Babich, Alessandro Callegari, Zhihong Chen, Edward Kiewra, Yanning Sun: Method to Improve Nucleation of Materials on Graphene and Carbon Nanotubes. International Business Machines Corporation, September 20, 2012: US20120235119-A1

Techniques for forming a thin coating of a material on a carbon-based material are provided. In one aspect, a method for forming a thin coating on a surface of a carbon-based material is provided. The method includes the following steps. An ultra thin silicon nucleation layer is deposited to a thick ...


6
David L O Meara, Cory Wajda, Tsuyoshi Takahashi, Alessandro Callegari, Kristen Scheer, Sufi Zafar, Paul Jamison: Interfacial oxidation process for high-k gate dielectric process integration. Tokyo Electron, International Business Machines Corporation, Pillsbury Winthrop Shaw Pittman, December 13, 2005: US06974779 (6 worldwide citation)

A method is provided for forming a microstructure with an interfacial oxide layer by using a diffusion filter layer to control the oxidation properties of a substrate associated with formation of a high-k layer into the microstructure. The diffusion filter layer controls the oxidation of the surface ...


7
Katherina Babich, Alessandro Callegari, Zhihong Chen, Edward Kiewra, Yanning Sun: Method to improve nucleation of materials on graphene and carbon nanotubes. International Business Machines Corporation, Vazken Alexanian, Michael J Chang, November 25, 2014: US08895352 (1 worldwide citation)

Techniques for forming a thin coating of a material on a carbon-based material are provided. In one aspect, a method for forming a thin coating on a surface of a carbon-based material is provided. The method includes the following steps. An ultra thin silicon nucleation layer is deposited to a thick ...


8
David L O Meara, Cory Wajda, Anthony Dip, Michael Toeller, Toshihara Furukawa, Kristen Scheer, Alessandro Callegari, Fred Buehrer, Sufi Zafar, Evgeni Gousev, Anthony Chou, Paul Higgins: Formation of ultra-thin oxide layers by self-limiting interfacial oxidation. Tokyo Electron, International Business Machines Corporation, Pillsbury Winthrop Shaw Pittman, June 26, 2007: US07235440 (1 worldwide citation)

Ultra-thin oxide layers are formed utilizing low pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxide. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, a nitride layer, a high-k layer, or ...


9
Praneet Adusumilli, Alessandro Callegari, Josephine B Chang, Changhwan Choi, Martin Michael Frank, Michael A Guillorn, Vijay Narayanan: Field-effect transistor device having a metal gate stack with an oxygen barrier layer. International Business Machines Corporation, Law Offices of Ira D Blecker P C, April 9, 2013: US08415677 (1 worldwide citation)

A field effect transistor device and method which includes a semiconductor substrate, a dielectric gate layer, preferably a high dielectric constant gate layer, overlaying the semiconductor substrate and an electrically conductive oxygen barrier layer overlaying the gate dielectric layer. In one emb ...


10
Vijay Narayanan, Vamsi K Paruchuri, Chen Tze Chiang, Alessandro Callegari, Joseph S Newbury, Michelle L Steen, Doris Bruce B, Michael Patrik Chudzik, Linder Barry P, John C Arnold: High-performance cmos circuit, and manufacturing method therefor. Internatl Business Mach Corp &Lt IBM&Gt, July 19, 2007: JP2007-184583 (1 worldwide citation)

PROBLEM TO BE SOLVED: To provide a CMOS circuit which includes an n-FET gate stack having a gate dielectric and a metal gate conductor, and a p-FET gate stack having a gate dielectric layer and a silicon-containing gate conductor.SOLUTION: In the high-performance complementary metal oxide film semic ...