1
Tatsuo Nagasaki, Yutaka Adachi, Kuniaki Saito, Akira Shimizu, Toshiyuki Ebihara: Printer incorporated type electronic camera and member to be recorded. Olympus Optical, Volpe and Koenig P C, November 13, 2001: US06317156 (161 worldwide citation)

A printer incorporated type electronic camera composed of an imaging unit including an imaging lens and a CCD, a printer unit, a cassette information detecting/recording unit, a tape cassette in which a recording tape having an adhesive agent applied to the back surface thereof is wound and accommod ...


2
Akira Shimizu, Hideaki Fukuda, Baiei Kawano, Kazuo Sato: Method of film deposition using single-wafer-processing type CVD. ASM Japan, Knobbe Martens Olson & Bear, July 26, 2005: US06921556 (133 worldwide citation)

A method of film deposition using a single-wafer-processing type CVD apparatus includes: (a) sealing a periphery of a susceptor to separate a reaction chamber from a wafer-handling chamber when the susceptor rises; and (b) flowing a gas from the wafer-handling chamber into the reaction chamber throu ...


3
Itaru Nishizawa, Shigekazu Inohara, Nobutoshi Sagawa, Akira Shimizu: System and method for query processing using virtual table interface. Hitachi, Mattingly Stanger & Malur P C, February 17, 2004: US06694306 (110 worldwide citation)

A query processing system in which a virtual table to enable multiple mapping to a plurality of databases is provided in a data processing system to receive a query from an application program and partial replicas as copies of part of the data in the virtual table is prepared in storage so that the ...


4
Woo Jin Lee, Akira Shimizu, Atsuki Fukazawa: Method of forming conformal dielectric film having Si-N bonds by PECVD. ASM Japan, Knobbe Martens Olson & Bear, April 5, 2011: US07919416 (102 worldwide citation)

A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate ...


5
Akira Shimizu: Apparatus for and method of measuring capacitance with high accuracy. Agilent Technologies, January 27, 2004: US06683462 (101 worldwide citation)

For measuring a capacitance with high accuracy, a capacitance measuring apparatus includes a voltage source with a current limiting function for applying different voltage values to the capacitance, and an integrator capable of continuous integrating operation for repeatedly integrating a current fl ...


6
Kuo wei Hong, Akira Shimizu, Kunitoshi Namba, Woo Jin Lee: Method of forming conformal film having si-N bonds on high-aspect ratio pattern. ASM Japan, Snell & Wilmer L, March 12, 2013: US08394466 (96 worldwide citation)

A method of forming a conformal dielectric film having Si—N bonds on a substrate having a patterned surface includes: introducing a reactant gas into a reaction space; introducing a silicon precursor in pulses of less than 5-second duration into the reaction space; applying a first RF power to the r ...


7
Yasuhiro Matsuda, Takashi Yoshida, Isao Shimizu, Katsumi Watanabe, Akira Shimizu, Masashi Yoshida: Thermal printer. Hitachi, Antonelli Terry Stout & Kraus, September 27, 1994: US05351071 (80 worldwide citation)

A thermal printer of the type printing an image on a printing paper wound in the form of a roll. Curling of the printing paper wound in the roll form occurs when the thermal printer is placed in its standby mode over more than a predetermined period of time while the printing paper is held between a ...


8
Woo Jin Lee, Akira Shimizu: Method of forming conformal dielectric film having Si-N bonds by PECVD. ASM Japan, Snell & Wilmer L, July 5, 2011: US07972980 (76 worldwide citation)

A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which a semiconductor substrate is pl ...


9
Akira Shimizu: Roller feed type insulated wire cutting and insulation stripping machine. Shin Meiwa, W G Fasse, D F Gould, June 30, 1981: US04275619 (58 worldwide citation)

First feed rollers whose speed is variable, second feed rollers intermittently driven and movable in the direction of an insulated wire, a clamp which is movable in the direction of the axis of the wire and can be opened and closed during the interruption of driving by the second feed rollers, insul ...


10
Woo Jin Lee, Kuo Wei Hong, Akira Shimizu, Deakyun Jeong: Method of depositing dielectric film having Si-N bonds by modified peald method. ASM Japan, Snell & Wilmer L, May 8, 2012: US08173554 (57 worldwide citation)

A method of forming dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; intro ...