1
Hisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang: Method for manufacturing a semiconductor device. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson PC, July 1, 1997: US05643826 (1053 worldwide citation)

A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film the ...


2
Hisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang: Method for manufacturing a semiconductor device. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson, July 13, 1999: US05923962 (775 worldwide citation)

A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film the ...


3
Hisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang: Active Matry Display. Semiconductor Energy Laboratory, Eric J Robinson, Nixon Peabody, September 4, 2001: US06285042 (289 worldwide citation)

A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film the ...


4
Hisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang: Semiconductor thin film transistor with crystal orientation. Semiconductor Energy Laboratory, Eric J Robinson, Nixon Peabody, January 1, 2002: US06335541 (247 worldwide citation)

A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film the ...


5
Hongyong Zhang, Toru Takayama, Yasuhiko Takemura, Akiharu Miyanaga: Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson P C, February 18, 1997: US05604360 (216 worldwide citation)

Nickel is introduced to a predetermined region of a peripheral circuit section, other than a picture element section, on an amorphous silicon film to crystallize from that region. After forming gate electrodes and others, sources, drains and channels are formed by doping impurities, and laser is irr ...


6
Akiharu Miyanaga, Hisashi Ohtani, Yasuhiko Takemura: Semiconductor device formed using a catalyst element capable of promoting crystallization. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Karlton C Butts, Sixbey Friedman Leedom & Ferguson P C, January 6, 1998: US05705829 (201 worldwide citation)

A semiconductor device using a crystalline semiconductor film is manufactured. The crystalline semiconductor film is formed by providing an amorphous silicon film with a catalyst metal for promoting a crystallization thereof and then heated for performing a thermal crystallization, following which t ...


7
Hisahi Ohtani, Akiharu Miyanaga, Hongyong Zhang, Naoaki Yamaguchi: Method for manufacturing semiconductor device. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson PC, February 25, 1997: US05605846 (201 worldwide citation)

A process for manufacturing a semiconductor device, particularly a thin film transistor, by using a crystalline silicon film having excellent characteristics. The process comprises forming a silicon nitride film and an amorphous silicon film in contact thereto, introducing a catalyst element capable ...


8
Hisashi Ohtani, Akiharu Miyanaga, Hongyong Zhang, Naoaki Yamaguchi, Atsunori Suzuki: Method for manufacturing a semiconductor device using a catalyst. Semiconductor Energy Laboratory, Sharp Corporation, Gerald J Ferguson Jr, Eric J Robinson, Sixbey Friedman Leedom & Ferguson PC, August 6, 1996: US05543352 (200 worldwide citation)

A method for manufacturing a thin film transistor having a crystalline silicon layer as an active layer comprises the steps of disposing a solution containing a catalyst for promoting a crystallization of silicon in contact with an amorphous silicon film, crystallizing the amorphous silicon at a rel ...


9
Hisashi Ohtani, Akiharu Miyanaga, Hongyong Zhang, Naoaki Yamaguchi, Atsunori Suzuki: Method for manufacturing a semiconductor device using a catalyst. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Sixbey Friedman Leedom & Ferguson P C, March 18, 1997: US05612250 (177 worldwide citation)

A method for manufacturing a thin film transistor having a crystalline silicon layer as an active layer comprises the steps of disposing a solution containing a catalyst for promoting a crystallization of silicon in contact with an amorphous silicon film, crystallizing the amorphous silicon at a rel ...


10
Hisashi Ohtani, Hiroki Adachi, Akiharu Miyanaga, Toru Takayama: Method for manufacturing a thin film transistor using catalyst elements to promote crystallization. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson, August 5, 1997: US05654203 (173 worldwide citation)

In a method for crystallizing an amorphous silicon film by a heat treatment that is effected for a duration of about 4 hours at about 550.degree. C. using a catalyst element for accelerating the crystallization, the quantity of the catalyst element to be introduced into the amorphous silicon is prec ...



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