1
Ajit P Paranjpe: Self-guided, self-propelled, convertible cleaning apparatus. June 3, 1997: US05634237 (163 worldwide citation)

A self-guided, self-propelled, convertible cleaning apparatus powered by a flexible electrical power cable connected to a conventional electrical power socket is described. In the self-guided mode, the cleaning apparatus automatically traverses the entire area to be cleaned, avoids obstacles located ...


2
Ajit P Paranjpe: Method for cleaning semiconductor wafers using liquified gases. Texas Instruments Incorporated, Jacqueline J Garner, Richard L Donaldson, William E Hiller, February 27, 1996: US05494526 (94 worldwide citation)

A semiconductor processing system (10) is provided that comprises a cleaning chamber (12) and a load lock wafer handler chamber (14). A cleaning agent (34) is placed in a cleaning bath chamber (28). A semiconductor substrate (16) is placed in contact with the cleaning agent (34). Cleaning agent (34) ...


3
Ajit P Paranjpe, Mehrdad M Moslehi, Randhir S Bubber, Lino A Velo: Semiconductor chip interconnect barrier material and fabrication method. CVC Products, Baker Botts L, September 25, 2001: US06294836 (78 worldwide citation)

A microelectronic semiconductor interconnect structure barrier and method of deposition provide improved conductive barrier material properties for high-performance device interconnects. The barrier comprises a dopant selected from the group consisting of platinum, palladium, iridium, rhodium, and t ...


4
Ajit P Paranjpe, Mehrdad M Moslehi, Boris Relja, Randhir S Bubber, Lino A Velo, Thomas R Omstead, David R Campbell Sr, David M Leet, Sanjay Gopinath: Microelectronic interconnect material with adhesion promotion layer and fabrication method. CVC Products, Baker Botts L, April 2, 2002: US06365502 (72 worldwide citation)

A microelectronic semiconductor interconnect structure barrier and method of deposition provide improved conductive barrier material properties for high-performance device interconnects. The barrier includes a refractory metal such as cobalt, cobalt-based alloys, ruthenium or ruthenium-based alloys ...


5
Ajit P Paranjpe: Plasma source and method of manufacturing. Texas Instruments Incorporated, Stanton C Braden, Richard L Donaldson, Jay Cantor, July 27, 1993: US05231334 (71 worldwide citation)

A plasma source for generating a plasma in a chamber in conjunction with a radio frequency generator is described. The plasma source comprises a coil spiral, at least one insulator and at least one capacitor. The coil spiral conducts the radio frequency wave from the radio frequency generator and in ...


6
Ajit P Paranjpe: Method for planarization. Texas Instruments Incorporated, John D Crane, Richard L Donaldson, James C Kesterson, July 18, 1995: US05434107 (68 worldwide citation)

A method for planarization of the upper surface of a semiconductor wafer. A wafer with features formed thereon is loaded into the apparatus after having been coated with an interlevel dielectric. Thereafter, the wafer is subjected to suitably elevated temperature while a uniform elevated pressure is ...


7
Ajit P Paranjpe: RF induction plasma source for plasma processing. Texas Instruments Incorporated, Douglas A Sorensen, Richard L Donaldson, William E Hiller, July 4, 1995: US05430355 (61 worldwide citation)

Plasma generator (10) includes chamber (14) for containing the plasma source and a plurality of coils (12) located inside of chamber (14). Located external to chamber (14) are a plurality of permanent multipolar magnets (34) operable to establish a magnetic field in the plasma source along the surfa ...


8
Ajit P Paranjpe, Sanjay Gopinath, Thomas R Omstead, Randhir S Bubber, Ming Mao: Atomic layer deposition for fabricating thin films. Veeco Instruments, Baker Botts L, May 2, 2006: US07037574 (56 worldwide citation)

An atomic layer deposition (ALD) process deposits thin films for microelectronic structures, such as advanced gap and tunnel junction applications, by plasma annealing at varying film thicknesses to obtain desired intrinsic film stress and breakdown film strength. The primary advantage of the ALD pr ...


9
Mehrdad M Moslehi, Cecil J Davis, Christopher J Mann, Dwain R Jakubik, Ajit P Paranjpe: Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure. CVC Products, Baker Botts L, June 14, 2005: US06905578 (51 worldwide citation)

An apparatus and method for depositing plural layers of materials on a substrate within a single vacuum chamber allows high-throughput deposition of structures such as these for GMR and MRAM application. An indexing mechanism aligns a substrate with each of plural targets according to the sequence o ...


10
Ajit P Paranjpe, Randhir S Bubber, Sanjay Gopinath, Thomas R Omstead, Mehrdad M Moslehi: Method of chemical-vapor deposition of a material. CVC Products, Baker Botts L, September 3, 2002: US06444263 (49 worldwide citation)

A method for chemical-vapor deposition of a material film adds precursor decomposition by-product to the precursor flow to suppress premature gas-phase precursor decomposition and improve process repeatability and film quality. In one embodiment, CVD cobalt films are deposited with carbonyl precurso ...