1
Ed Rutter
Edward Rutter, Ahila Krishnamoorthy, Joseph Kennedy: Processable inorganic and organic polymer formulations, methods of production and uses thereof. Honeywell International, March 3, 2011: US20110054119-A1

Polymer formulations are disclosed and described herein that comprise: at least one polymer comprising at least one hydroxy functional group, at least one acid source, and at least one acid-activated crosslinker that reacts with the polymer. In contemplated embodiments, these polymer formulations ar ...


2
Ahila Krishnamoorthy, David J Duquette, Shyam P Murarka: Copper alloy electroplating bath for microelectronic applications. Semitool, Christensen O&apos Connor Johnson Kindness PLLC, November 20, 2001: US06319387 (126 worldwide citation)

A metallized structure for use in a microelectronic circuit is set forth. The metallized structure comprises a dielectric layer, an ultra-thin film bonding layer disposed exterior to the dielectric layer, and a low-Me concentration, copper-Me alloy layer disposed exterior to the ultra-thin film bond ...


3
Ahila Krishnamoorthy, David J Duquette, Shyam P Murarka: Metallization structures for microelectronic applications and process for forming the structures. Semitool, Christensen O&apos Connor Johnson Kindness PLLC, April 9, 2002: US06368966 (28 worldwide citation)

A metallized structure for use in a microelectronic circuit is set forth. The metallized structure comprises a dielectric layer, an ultra-thin film bonding layer disposed exterior to the dielectric layer, and a low-Me concentration, copper-Me alloy layer disposed exterior to the ultra-thin film bond ...


4
Ahila Krishnamoorthy, David J Duquette, Shyam P Murarka: Metallization structures for microelectronic applications and process for forming the structures. Semitool, Christensen O&apos Connor Johnson Kindness PLLC, November 26, 2002: US06486533 (16 worldwide citation)

A metallized structure for use in a microelectronic circuit is set forth. The metallized structure comprises a dielectric layer, an ultra-thin film bonding layer disposed exterior to the dielectric layer, and a low-Me concentration, copper-Me alloy layer disposed exterior to the ultra-thin film bond ...


5
Qiang Guo, Ahila Krishnamoorthy, Xiaomei Bu, Vladimir N Bliznetsov: Method to form Cu/OSG dual damascene structure for high performance and reliable interconnects. Agency for Science Technology and Research, George O Saile, Stephen B Ackerman, July 5, 2005: US06913994 (9 worldwide citation)

An improved method of forming a dual damascene structure that includes an organosilicate glass (OSG) dielectric layer is described. A via first process is followed in which a via is formed in the OSG layer and preferably stops on a SiC layer. The SiC layer is removed prior to stripping a photoresist ...


6
Ahila Krishnamoorthy, Richard Spear, Amanuel Gebrebrhan: Compositions, layers and films for optoelectronic devices, methods of production and uses thereof. Faegre Baker Daniels, December 2, 2014: US08901268 (4 worldwide citation)

Crosslinkable compositions are disclosed herein that comprise at least one silicon-based material comprising at least one alkyl group and at least one aryl or aromatic group, at least one catalyst, and at least one solvent.


7
Ramanath Ganapathiraman, Ahila Krishnamoorthy, Kaushik Chanda, Shyam P Murarka: Diffusion barriers comprising a self-assembled monolayer. Rensselaer Polytechnic Institute, David J Aston, Peters Verny, April 10, 2007: US07202159 (3 worldwide citation)

The present invention provides a method for forming a diffusion barrier layer, a diffusion barrier in an integrated circuit and an integrated circuit. The method for forming a diffusion barrier involves the following steps: 1) preparing a silicon substrate; 2) contacting the silicon substrate with a ...


8
Edward Rutter Jr, Ahila Krishnamoorthy, Joseph Kennedy: Processable inorganic and organic polymer formulations, methods of production and uses thereof. Honeywell International, Faegre Baker Daniels, October 14, 2014: US08859673

Polymer formulations are disclosed and described herein that comprise: at least one polymer comprising at least one hydroxy functional group, at least one acid source, and at least one acid-activated crosslinker that reacts with the polymer. In contemplated embodiments, these polymer formulations ar ...


9
Qiang Guo, Ahila Krishnamoorthy, Xiaomei Bu, Vladimir N Bliznetsov: Method to form Cu/OSG dual damascene structure for high performance and reliable interconnects. Institute of Microelectronics, Stephen B Ackerman, October 14, 2004: US20040203223-A1

An improved method of forming a dual damascene structure that includes an organosilicate glass (OSG) dielectric layer is described. A via first process is followed in which a via is formed in the OSG layer and preferably stops on a SiC layer. The SiC layer is removed prior to stripping a photoresist ...


10
Ahila Krishnamoorthy, Joseph Kennedy, Richard Spear, Deborah Yellowaga, Peter Smith, Ben Palmer, Ronald Katsanes, Michael Tucker: Compositions, layers and films for optoelectronic devices, methods of production and uses thereof. Buchalter Nemer, July 3, 2008: US20080157065-A1

Optoelectronic devices are described that include: a) a surface within the device, and b) at least one sufficiently light-transmissive crosslinked film, wherein the film is formed from at least one silicon-based material, at least one catalyst, and at least one solvent. Optoelectronic device are als ...



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