1
Raihan M Tarafdar, George D Papasouliotis, Ron Rulkens, Dennis M Hausmann, Jeff Tobin, Adrianne K Tipton, Bunsen Nie: Sequential deposition/anneal film densification method. Novellus Systems, Beyer Weaver & Thomas, December 12, 2006: US07148155 (255 worldwide citation)

A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique. The deposited layer thickness is insufficient to prevent substantially complete penetration of annealing process agents into the layer and migration of water out of the layer. The d ...


2
Adrianne K Tipton, Brian G Lu, Patrick A Van Cleemput, Michelle T Schulberg, Qingguo Wu, Haiying Fu, Feng Wang: Method of porogen removal from porous low-k films using UV radiation. Novellus Systems, Beyer Weaver & Thomas, April 24, 2007: US07208389 (104 worldwide citation)

Methods of preparing a porous low-k dielectric material on a substrate are provided. The methods involve the use of ultraviolet radiation to react with and remove porogen from a porogen containing precursor film, leaving a porous low-k dielectric matrix. Methods using oxidative conditions and non-ox ...


3
Raihan M Tarafdar, George D Papasouliotis, Ron Rulkens, Dennis M Hausmann, Jeff Tobin, Adrianne K Tipton, Bunsen Nie: Sequential deposition/anneal film densification method. Novellus Systems, Weaver Austin Villeneuve & Sampson, September 7, 2010: US07790633 (102 worldwide citation)

A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique. The deposited layer thickness is insufficient to prevent substantially complete penetration of annealing process agents into the layer and migration of water out of the layer. The d ...


4
George D Papasouliotis, Raihan M Tarafdar, Ron Rulkens, Dennis M Hausmann, Jeff Tobin, Adrianne K Tipton, Bunsen Nie: Method for controlling properties of conformal silica nanolaminates formed by rapid vapor deposition. Novellus Systems, Beyer Weaver, November 20, 2007: US07297608 (56 worldwide citation)

A method employing atomic layer deposition rapid vapor deposition (RVD) conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is then annealed using a high density plasma (HDP) at a temperature under 500° C. in an oxidizing environment. Th ...


5
George D Papasouliotis, Raihan M Tarafdar, Ron Rulkins, Dennis M Hausmann, Jeff Tobin, Adrianne K Tipton, Bunsen Nie, Wai Fan Yau, Brian G Lu, Timothy M Archer, Sasson Roger Somekh: Conformal nanolaminate dielectric deposition and etch bag gap fill process. Novellus Systems, Weaver Austin Villeneuve & Sampson, January 27, 2009: US07482247 (52 worldwide citation)

Conformal nanolaminate dielectric deposition and etch back processes that can fill high aspect ratio (typically at least 5:1, for example 6:1), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps with significantly reduced incidence of voids or weak spots involve the use of ...


6
Dennis M Hausmann, Adrianne K Tipton, Patrick A Van Cleemput, Bunsen Nie, Francisco J Juarez, Teresa Pong: Properties of a silica thin film produced by a rapid vapor deposition (RVD) process. Novellus Systems, Beyer Weaver & Thomas, March 15, 2005: US06867152 (40 worldwide citation)

A rapid vapor deposition (RVD) method conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film has a low dielectric constant, low wet etch rate, low film shrinkage and low stress hysteresis, appropriate for various integrated circuit dielectr ...


7
Dennis M Hausmann, Jeff Tobin, George D Papasouliotis, Ron Rulkens, Raihan M Tarafdar, Adrianne K Tipton, Bunsen Nie: Silica thin films produced by rapid surface catalyzed vapor deposition (RVD) using a nucleation layer. Novellus Systems, Beyer Weaver, April 10, 2007: US07202185 (28 worldwide citation)

An method employing atomic layer deposition (ALD) and rapid vapor deposition (RVD) techniques conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film has a low dielectric constant and a high degree of surface smoothness. The method includes ...


8
Ron Rulkens, Dennis M Hausmann, Raihan M Tarafdar, George D Papasouliotis, Bunsen Nie, Adrianne K Tipton, Jeff Tobin: films, Mixed alkoxy precursors and methods of their use for rapid vapor deposition of SiO. Novellus Systems, Beyer Weaver & Thomas, August 29, 2006: US07097878 (22 worldwide citation)

A method employing rapid vapor deposition (RVD) deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is thicker, faster growing, shows better gap fill performance and has improved film properties compared to films resulting from silicon precursors wi ...


9
Dennis M Hausmann, Adrianne K Tipton, Bunsen Nie, George D Papasouliotis, Ron Rulkens, Raihan M Tarafdar: Aluminum phosphate incorporation in silica thin films produced by rapid surface catalyzed vapor deposition (RVD). Novellus Systems, Beyer Weaver & Thomas, October 31, 2006: US07129189 (20 worldwide citation)

An method employing atomic layer deposition (ALD) and rapid vapor deposition (RVD) techniques conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film applies a phosphate-doped silicate film using atomic layer deposition (ALD) and rapid surfa ...


10
George D Papasouliotis, Jeff Tobin, Ron Rulkens, Dennis M Hausmann, Adrianne K Tipton, Raihan M Tarafdar, Bunsen Nie: Dynamic rapid vapor deposition process for conformal silica laminates. Novellus Systems, Beyer Weaver, May 29, 2007: US07223707 (9 worldwide citation)

A method for using ALD and RVD techniques in semiconductor manufacturing to produce a smooth nanolaminate dielectric film, in particular for filling structures with doped or undoped silica glass, uses dynamic process conditions. A dynamic process using variable substrate (e.g., wafer) temperature, r ...