1
Perlegos Gust, Wu Tsung Ching: Mos floating gate memory cell and process for fabricating same.. Seeq Technology, November 6, 1985: EP0160003-A1

A two device floating gate MOS nonvolatile memory cell (8) including a floating gate memory device (20) coupled to a select device (22) wherein a thin tunnel dielectric region (32, 134) of insulation material between the substrate (10, 100) and floating gate (26, 26a, 26b) of the memory device (20) ...


2
Perlegos Gust, Wu Tsung Ching: Mos floating gate memory cell and process for fabricating same. Seeq Technology, BROOKS James C, March 14, 1985: WO/1985/001146

A two device floating gate MOS nonvolatile memory cell (8) including a floating gate memory device (20) coupled to a select device (22) wherein a thin tunnel dielectric region (32, 134) of insulation material between the substrate (10, 100) and floating gate (26, 26a, 26b) of the memory device (20) ...



Click the thumbnails below to visualize the patent trend.