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Perlegos Gust, Wu Tsung Ching: Mos floating gate memory cell and process for fabricating same.. Seeq Technology, November 6, 1985: EP0160003-A1

A two device floating gate MOS nonvolatile memory cell (8) including a floating gate memory device (20) coupled to a select device (22) wherein a thin tunnel dielectric region (32, 134) of insulation material between the substrate (10, 100) and floating gate (26, 26a, 26b) of the memory device (20) ...


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Perlegos Gust, Wu Tsung Ching: Mos floating gate memory cell and process for fabricating same. Seeq Technology, BROOKS James C, March 14, 1985: WO/1985/001146

A two device floating gate MOS nonvolatile memory cell (8) including a floating gate memory device (20) coupled to a select device (22) wherein a thin tunnel dielectric region (32, 134) of insulation material between the substrate (10, 100) and floating gate (26, 26a, 26b) of the memory device (20) ...