1
Muriel Firon, Bernard Drevillon, Anna Fontcuberta I Morral, Serge Palacin, Pere Roca i Cabarrocas: Photoactive nanocomposite and method for the production thereof. Commissariat a l Energie Atomique, Ecole Polytechnique, Centre National de la Recherche Scientifique, Young & Thompson, May 11, 2010: US07713779 (39 worldwide citation)

The invention concerns a photoactive nanocomposite (3) comprising at least one donor-acceptor couple of semiconductor elements. One of the elements is made of doped nanowires (7) with sp3 structure, and the other of the elements is an organic compound (8). The elements are supported by a device subs ...


2
Pere Roca I Cabarrocas, Pavel Bulkin, Dmitri Daineka, Patrick Leempoel, Pierre Descamps, Thibault Kervyn De Meerendre: Method for forming a film with a graded bandgap by deposition of an amorphous material from a plasma. Dow Corning Corporation, Ecole Polytechnique, Leason Ellis, June 21, 2011: US07964438 (14 worldwide citation)

A method is described of forming a film of an amorphous material on a substrate by deposition from a plasma. The substrate is placed in an enclosure, a film precursor gas is introduced into the enclosure, and unreacted and dissociated gas is extracted from the enclosure so as to provide a low pressu ...


3
Pierre Jean Ribeyron, Claude Jaussaud, Pere Roca I Cabarrocas, Jerome Damon Lacoste: Semiconductor device with heterojunctions and an inter-finger structure. Commissariat a l Energie Atomique Et Aux Energies Alternatives, Oblon Spivak McClelland Maier & Neustadt L, May 3, 2011: US07935966 (4 worldwide citation)

A semiconductor device including, on at least one surface of a crystalline semiconductor substrate, at least one first amorphous semiconductor region doped with a first type of conductivity. The semiconductor substrate includes, on the same at least one surface, at least one second amorphous semicon ...


4
Jean Paul Peres, Stephane Gillot, Juliette Saint, Mathieu Morcrette, Dominique Larcher, Jean Marie Tarascon, Pere Roca I Cabarrocas: Nanocomposite material for the anode of a lithium cell. SAFT, Sughrue Mion PLLC, November 22, 2011: US08062556 (2 worldwide citation)

The subject of the invention is an anode material of the silicon-carbon composite type, for a lithium cell, having a high mass capacity and good cycling stability. This material is obtained by a preparation method comprising the steps consisting of: a) providing a silicon powder obtained by the plas ...


5
Pere Roca I Cabarrocas, Jerome Damon Lacoste: Semiconductor device with heterojunctions and an interdigitated structure. Centre National de la Recherche Scientifique, Ecole Polytechnique, Oblon Spivak McClelland Maier & Neustadt L, April 16, 2013: US08421074 (1 worldwide citation)

A Semiconductor device including, on at least one surface of a layer made of a crystalline semiconductor material of a certain type of conductivity, a layer made of an amorphous semiconductor material, doped with a type of conductivity opposite to the type of conductivity of the crystalline semicond ...


6
Pere Roca I Cabarrocas, Pavel Bulkin, Dmitri Daineka, Thien Hai Dao, Patrick Leempoel, Pierre Descamps, Thibault Kervyn De Meerendre: Deposition of amorphous silicon films by electron cyclotron resonance. Ecole Polytechnique, Dow Corning Corporation, Leason Ellis, January 8, 2013: US08349412 (1 worldwide citation)

A method is described for forming a film of amorphous silicon (a-Si:H) on a substrate by deposition from a plasma. The substrate is placed in an enclosure, a film precursor gas is introduced into the enclosure, and unreacted and dissociated gas is extracted from the enclosure so as to provide a low ...


7
Pere Roca I Cabarrocas, RĂ©gis Vanderhaghen, Bernard Drevillon: Transistor for active matrix display and a method for producing said transistor. Centre National de la Recherche Scientifique, Ecole Polytechnique, Young & Thompson, January 4, 2011: US07863113 (1 worldwide citation)

A transistor for active matrix display and a method for producing the transistor (1). The transistor (1) includes a microcrystalline silicon film (5) and an insulator (3). The crystalline fraction of the microcrystalline silicon film (5) is above 80%. According to the invention, the transistor (1) i ...


8
Pere Roca I Cabarrocas, Pavel Bulkin, Dmitri Daineka, Patrick Leempoel, Pierre Descamps, Thibault Kervyn De Meerendre: Method of forming a film by deposition from a plasma. Dow Corning Europe, Ecole Polytechnique, Leason Ellis, February 26, 2013: US08383210

A method is described of depositing film of an amorphous or microcrystalline material, for example silicon, from a plasma on to a substrate. Microwave energy is introduced into a chamber as a sequence of discrete microwave pulses, a film precursors gas is introduced into the chamber as a sequence of ...


9
Pere Roca I Cabarrocas, Pavel Bulkin, Dmitri Daineka, Patrick Leempoel, Pierre Descamps, Thibault Kervyn De Meerendre: Method and apparatus for forming a film by deposition from a plasma. Dow Corning Corporation, Ecole Polytechnique, Leason Ellis, October 14, 2014: US08859929

An apparatus is described for depositing a film on a substrate from a plasma. The apparatus comprises an enclosure, a plurality of plasma generator elements disposed within the enclosure, and means, also within the enclosure, for supporting the substrate. Each plasma generator element comprises a mi ...


10
Pere Roca I Cabarrocas, Pavel Bulkin, Dmitri Daineka, Patrick Leempoel, Pierre Descamps, Thibault Kervyn De Meerendre: Device for forming a film by deposition from a plasma. Ecole Polytechnique, Dow Corning Corporation, Leason Ellis, January 28, 2014: US08635972

A plasma excitation device is described for use in depositing a film on a substrate from a plasma formed by distributed electron cyclotron resonance. The device comprises a microwave antenna having an end from which microwaves are emitted, a magnet disposed in the region of the said antenna end and ...