Guoxiao Guo Guoxiao Guo
Jie Yu, Guoxiao Guo: System and method for identifying track squeeze errors (TSEs) of a disk of a disk drive. Western Digital Technologies, Blakely Sokoloff Taylor & Zafman, February 16, 2010: US07663835 (110 worldwide citation)

A system and method for efficiently identifying track squeeze errors (TSEs) of a disk of a disk drive during a testing process for the disk drive is disclosed. The method includes reading servo bursts from a track of the disk, utilizing a modeled scan variable, and determining a gain comprising a ra ...

Deodatta Shenai-Khatkhate Bob Ware
Francis Joseph Lipiecki, Stephen G Maroldo, Deodatta Vinayak Shenai Khatkhate, Robert A Ware: Method of preparing organometallic compounds. Rohm and Haas Company, Tifani M Cottingham, February 9, 2010: US07659414 (3 worldwide citation)

A method of preparing an ultra-pure organometallic compound comprising using a microchannel device for synthesis in reacting a metal halide with an alkylating agent to produce an ultra-pure alkylmetal compound for processes such as chemical vapor deposition.

Belgacem Haba Belgacem (Bel) Haba
Belgacem Haba, Chang Myung Ryu, Kimitaka Endo, Christopher Paul Wade: Microelectronic substrate or element having conductive pads and metal posts joined thereto using bond layer. Tessera Interconnect Materials, Tessera, LERNER DAVID et al, February 25, 2010: US20100044860-A1

An interconnection element can include a substrate, e.g., a connection substrate, element of a package, circuit panel or microelectronic substrate, e.g., semiconductor chip, the substrate having a plurality of metal conductive elements such as conductive pads, contacts, bond pads, traces, or the lik ...

James Kraemer Ph.D.
Robert Lee Angell, Robert R Friedlander, James R Kraemer: Selection and Delivery of Messages Based on an Association of Pervasive Technologies. International Business Machines Corporation, Duke W Yee, February 25, 2010: US20100049805-A1

A computer implemented method, apparatus, and computer program product for selectively delivering messages. In one embodiment, the process identifies a set of pervasive devices using detection data. The detection data comprises an electronic signature transmitted from the set of pervasive devices as ...

Jean-luc Dubois
Jean Luc Dubois: Method for the synthesis of acrylonitrile from glycerol. Arkema France, Hunton & Williams, February 25, 2010: US20100048850-A1

The invention relates to a novel way to synthesize acrylonitrile from a renewable raw material and more particularly relates to a method for producing acrylonitrile by the ammoxidation of glycerol in gaseous phase. The method can be implemented in a single step, or the glycerol can be previously sub ...

Dr. Elke Erben
Stephan Kudelka, Lars Oberbeck, Uwe Schroeder, Tim Boescke, Johannes Heitmann, Annette Saenger, Joerg Schumann, Elke Erben: Deposition method for a transition-metal-containing dielectric. Qimonda, Fay Kaplun & Marcin, February 23, 2010: US07666752 (7 worldwide citation)

The present invention relates to a method for depositing a dielectric material comprising a transition metal compound. After providing a substrate, a first pre-cursor comprising a transition metal compound and a second pre-cursor predominantly comprising at least one of water vapour, ammonia and hyd ...


Katherina Babich
Katherina E Babich, Michael A Guillorn, Isaac Lauer, Amlan Majumdar: Thin body silicon-on-insulator transistor with borderless self-aligned contacts. International Business Machines Corporation, Fleit Gibbons Gutman Bongini & Bianco Pl, February 18, 2010: US20100038715-A1

A method for fabricating a thin-silicon-on-insulator transistor with borderless self-aligned contacts is disclosed. A gate stack is formed on a silicon layer that is above a buried oxide layer. The gate stack includes a gate oxide layer on the silicon layer and a gate electrode layer on the gate oxi ...

Katherina Babich
Katherina E Babich, Josephine B Chang, Nicholas C Fuller, Michael A Guillorn, Isaac Lauer, Michael J Rooks: Self-aligned borderless contacts for high density electronic and memory device integration. International Business Machines Corporation, Fleit Gibbons Gutman Bongini & Bianco Pl, February 18, 2010: US20100038723-A1

A method for fabricating a transistor having self-aligned borderless electrical contacts is disclosed. A gate stack is formed on a silicon region. An off-set spacer is formed surrounding the gate stack. A sacrificial layer that includes a carbon-based film is deposited overlying the silicon region, ...


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