1
John Yamamoto Rajiv Banavali
Rajiv Manohar Banavali, Randall Wayne Stephens, John Hiroshi Yamamoto: Preparation of MnB12H12. Rohm And Haas Company, May 7, 2009: US20090118526-A1

A method for producing MnB12H12, wherein M is a metal or ammonium cation and n is one or two, by combining a metal borohydride and XBH3; wherein X is a substituted amine; a substituted phosphine; or tetrahydrofuran.


2
Bhawna Kulshreshtha Sandeep Tyagi
Tyagi Sandeep, Anand Vishal, Kulshreshtha Bhawna, Preschilla Nisha, Venkateswaran Natarajan, Biswas Amit: Polyolefin composition having high melt strength. Reliance, Tyagi Sandeep, Anand Vishal, Kulshreshtha Bhawna, Preschilla Nisha, Venkateswaran Natarajan, Biswas Amit, MADAN Jose A, May 7, 2009: WO/2009/057131

The invention relates to filled polyolefin compositions having improved mechanical and surface properties and to a process for preparing them. The invention provides a composition of polyolefin reinforced with filler(s), impact modifier(s) and a fibrous sub micron structured material, the compositio ...


3
Sandeep Tyagi
Bhat Shrikant, Rai Roopali, Krishnamurthy Sriram, Tyagi Sandeep, Volkers Andries Andriaan: Thermoplastic compositions, method of manufacture, and articles therefrom. Sabic Innovative Plastics Ip, Bhat Shrikant, Rai Roopali, Krishnamurthy Sriram, Tyagi Sandeep, Volkers Andries Andriaan, May 7, 2009: WO/2009/057025

A thermoplastic composition comprising, based on the total weight of the thermoplastic composition, from 0.1 to 30 weight percent of an inorganic filler composition comprising an inorganic filler-polyorganosiloxane composite; up to 80 weight percent of a polycarbonate; and from 1 to 25 weight percen ...


4
Belgacem Haba Belgacem (Bel) Haba
Belgacem Haba, Vage Oganesian, Kimitaka Endo: Robust multi-layer wiring elements and assemblies with embedded microelectronic elements. Tessera, Tessera, LERNER DAVID et al, May 7, 2009: US20090115047-A1

An interconnect element 130 can include a dielectric layer 116 having a top face 116b and a bottom face 116a remote from the top face, a first metal layer defining a plane extending along the bottom face and a second metal layer extending along the top face. One of the first or second metal layers, ...


5
Gerald N Nkwantah
Xuequn Hu, Pradnya V Nagarkar, Gerald N Nkwantah, Michael K Gerlach, James P Dizio, Gregg S Cannavo: Optical element having optical adhesive layer and polarizer. 3M Innovative Properties Company, Oliff & Berridge, May 7, 2009: US20090117378-A1

An optical element includes a polarizer having oriented vinylene segments; a substrate; and an adhesive layer disposed between the polarizer and the substrate, the adhesive layer comprising aliphatic urethane(meth)acrylate oligomer, (meth)acryl monomer, silane, and crosslinker, the crosslinker compr ...


6
Eugene Fitzgerald
Yu Bai, Minjoo L Lee, Eugene A Fitzgerald: Tensile strained ge for electronic and optoelectronic applications. Gauthier & Connors, May 7, 2009: US20090114902-A1

A semiconductor structure is provided. The semiconductor structure includes one or more III-IV material-based semiconductor layers. A tensile-strained Ge layer is formed on the one or more a III-IV material-based semiconductor layers. The tensile-strained Ge layer is produced through lattice-mismatc ...


7
Watanabe Tomohiro, Abe Katsumi, Hayashi Susumu: Thin-film transistor, its manufacturing method, and display device. Canon, May 7, 2009: JP2009-099847 (117 worldwide citation)

PROBLEM TO BE SOLVED: To provide an a-IGZO-based thin-film transistor further stable against electrical stress, and to provide a display device using the same.SOLUTION: The thin-film transistor has an active layer formed of an amorphous oxide prepared by containing In and Zn. In the thin-film transi ...


8
Kohler Ross A, Mcpartland Richard J, Werner Wayne E: Systematic error correction for multi-level flash memory. Agere Systems, Kohler Ross A, Mcpartland Richard J, Werner Wayne E, MENDELSOHN Steve, May 7, 2009: WO/2009/058140 (87 worldwide citation)

In accordance with exemplary embodiments, a multi-level flash memory employs error correction of systematic errors when reading multi-level flash memory. Error correction includes i) detection of each systematic error, ii) feedback of the systematic error to circuitry within the memory, and iii) sub ...


9
Nathan Arokia, Chaji G Reza: High aperture ratio pixel layout for display device. Ignis Innovation, Nathan Arokia, Chaji G Reza, HARRIS John D, May 7, 2009: WO/2009/055920 (86 worldwide citation)

A display device, pixel layout and method of forming the same is provided. The display device includes: a plurality of pixels formed in a pixel array area; and a power supply grid for distributing power to the pixels. Each pixel has a light emitting device and a plurality of transistors. The power s ...


10
Liu Yuxin, Chang Nelson Liang An: Interactive display system with collaborative gesture detection. Hewlett Packard Development Company, Liu Yuxin, Chang Nelson Liang An, LEHMANN Eileen A, May 7, 2009: WO/2009/059065 (81 worldwide citation)

An interactive content delivery system (10) includes means for displaying visual content (20) to a group of individuals (14), means for detecting a collective gesture (12) of the group, and a control system (26), coupled to the means for displaying visual content (20) and the means for detecting a c ...