1
Ravi Laxman
John N Gregg, Scott L Battle, Jeffrey I Banton, Donn K Naito, Ravi Laxman: Method and apparatus to help promote contact of gas with vaporized material. Advanced Technology Materials, Vincent K Gustafson, Intellectual Property Technology Law, Maggie Chappuis, November 27, 2007: US07300038 (36 worldwide citation)

Structure helps support material in a container with an increased exposed surface area to help promote contact of a gas with vaporized material. For at least one disclosed embodiment, the structure may help support material for vaporization in the same form as when the material is placed at the stru ...


2
Aaron Carrano
Aaron W Carrano, Gopinath Kuduvalli, Michael J Saracen, Mohan Bodduluri: Imaging geometry for image-guided radiosurgery. Accuray Incorporated, Blakely Sokoloff Taylor & Zafman, November 27, 2007: US07302033 (24 worldwide citation)

A system and method for stereoscopically imaging a patient at multiple locations in a radiation treatment system with a variable imaging geometry to enable the delivery of radiation treatments from multiple ranges of treatment angles without obstructing the imaging system or the radiation treatment.


3
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Natalie B Feilchenfeld, Michael L Gautsch, Zhong Xiang He, Matthew D Moon, Vidhya Ramachandran, Barbara Waterhouse: Formation of metal-insulator-metal capacitor simultaneously with aluminum metal wiring level using a hardmask. International Business Machines Corporation, Gibb & Rahman, Anthony J Canale, November 27, 2007: US07301752 (5 worldwide citation)

Disclosed is a method of fabricating a metal-insulator-metal (MIM) capacitor. In this method, a dielectric layer is formed above a lower conductor layer and an upper conductor layer is formed above the dielectric layer. The invention then forms an etch stop layer above the upper conductor layer and ...


4
Eugene Fitzgerald
Minjoo L Lee, Christopher W Leitz, Eugene A Fitzgerald: Structure and method for a high-speed semiconductor device having a Ge channel layer. Massachusetts Institute of Technology, Goodwin Procter, November 27, 2007: US07301180 (8 worldwide citation)

The invention provides semiconductor structure comprising a strained Ge channel layer, and a gate dielectric disposed over the strained Ge channel layer. In one aspect of the invention, a strained Ge channel MOSFET is provided. The strained Ge channel MOSFET includes a relaxed SiGe virtual substrate ...


5
Nicolas Demange
Nicolas Demange: Error test for an address decoder of a non-volatile memory. STMicroelectronics, Hogan & Hartson, November 27, 2007: US07301837 (1 worldwide citation)

A non-volatile memory includes word lines providing access to memory cells, a word-line decoder applying an activation signal corresponding to an input address to a word line, a converter reproducing the activation signal on outputs by lowering its voltage level, and an encoding circuit that include ...


6
Robert H Wham, Thomas A Sturm: Automatic control system for an electrosurgical generator. Sherwood Services, November 27, 2007: US07300435 (371 worldwide citation)

An automatic control system for an electrosurgical generator is herein disclosed. The automatic control system includes voltage and current sensing circuits, a processing circuit, an output determining circuit, and a control circuit. Samples of the voltage and current outputs are supplied to the pro ...


7
Michel Petronella Hubertus Vleugels, Markus Cornelis Jakobus Lazeroms: Surgical instrument. VLEUGELS Holding, Keusey Tutunjian & Bitetto P C, November 27, 2007: US07300450 (302 worldwide citation)

The invention relates to an instrument for surgery, in particular minimally invasive surgery. The instrument includes means for feeding back a force which is exerted on the working element of the instrument to the operating element. These means include at least a first force sensor for measuring the ...


8
Shunpei Yamazaki, Hongyong Zhang: Method of forming an oxide film. Semiconductor Energy Laboratory, Nixon Peabody, Jeffrey L Costellia, November 27, 2007: US07301211 (205 worldwide citation)

A method of forming an oxide film and a method of manufacturing an electronic device utilizing the oxide film is disclosed. A silicon oxide film is formed on a substrate by sputtering. Therefore, the film formation is carried out at a low temperature. The sputtering atmosphere. comprises an oxidizin ...


9
Serguei Okhonin, Mikhail Nagoga: Bipolar reading technique for a memory cell having an electrically floating body transistor. Innovative Silicon, Neil A Steinberg, November 27, 2007: US07301803 (185 worldwide citation)

A method and a device for the coding and decoding of an information symbol for transmission over a transmission channel or a received signal value is described and illustrated, whereby a channel symbol used for coding is selected from at least two available channel symbols by means of a pre-calculat ...


10
Mark H Lucovsky, Shaun Douglas Pierce, Steven D White, Ramu Movva, Jagadeesh Kalki, David Benjamin Auerbach, Peter Sewall Ford, Jay Christopher Jacobs, Paul Andrew Steckler, Walter C Hsueh, Kendall D Keil, Burra Gopal, Suresh Kannan, Yi Wen Guu, Samuel John George, William Raymond Hoffman, Philip Michael Smoot, Lijiang Fang, Michael B Taylor, Winnie C Wu, Paul J Leach, Richard B Ward, Yun Qi Yuan: Schema-based services for identity-based data access. Microsoft Corporation, November 27, 2007: US07302634 (183 worldwide citation)

A schema-based service for Internet access to per-user services data, wherein access to data is based on each user's identity. The service includes a schema that defines rules and a structure for each user's data, and also includes methods that provide access to the data in a defined way. The servic ...