1
Kevin Rodzinak
Arruda Jeannie M, Campbell Brian T, Cosford Nicholas D P, Hoffman Jacob M, Hu Essa H, Layton Mark E, Li Yiwei, Liang Jun, Rodzinak Kevin J, Siu Tony, Stearns Brian A, Tehrani Lida R: Inhibitors of akt activity. Merck & Co, Arruda Jeannie M, Campbell Brian T, Cosford Nicholas D P, Hoffman Jacob M, Hu Essa H, Layton Mark E, Li Yiwei, Liang Jun, Rodzinak Kevin J, Siu Tony, Stearns Brian A, Tehrani Lida R, MERCK 126 East Lincoln Avenue Rahway NJ 07065 0907, June 22, 2006: WO/2006/065601 (23 worldwide citation)

The present invention is directed to compounds which contain substituted naphthyridines which inhibit the activity of Akt, a serine/threonine protein kinase. The invention is further directed to chemotherapeutic compositions containing the compounds of this invention and methods for treating cancer ...


2
Dr Raj C Thiagarajan ATOA Scientific Technologies
Chinniah Thiagarajan, Narayanaswamy Venkatesha: Load bearing structure and method of manufacture thereof. General Electric Company, General Electric Company, Global Research, June 22, 2006: US20060131437-A1

A load bearing structure configured to bear a load, the structure comprising a multiple cells. The load bearing structure has a length, a center, and a cell density, which varies at least along the length of the load bearing structure, which weighs at least 6 kg.


3
Dan Miller
Daniel N Miller, Paul D McClure, Charles J Chase, Robert R Boyd: Systems and methods for plasma jets. Lockheed Martin Corporation, Koestner Bertani, June 22, 2006: US20060131282-A1

A plasma jet system includes a housing with an opening. A plasma generator is coupled to ionize a fluid in the housing. An electromagnetic accelerator is coupled to generate an electric field that accelerates ionized fluid in the housing toward the opening. A controller can modulate the frequency of ...


4
Kumomi Hideya, Hosono Hideo, Kamiya Toshio, Nomura Kenji: Image display. Canon, Tokyo Institute Of Technology, June 22, 2006: JP2006-165528 (528 worldwide citation)

PROBLEM TO BE SOLVED: To provide a novel image display using an amorphous oxide.SOLUTION: The active matrix image display has an amorphous oxide used as an active layer 12 of a field effect transistor for driving a light control element. The image display is an active matrix image display and has a ...


5
Sano Masafumi, Nakagawa Katsumi, Hosono Hideo, Kamiya Toshio, Nomura Kenji: Amorphous oxide and field effect transistor. Canon, Tokyo Institute Of Technology, June 22, 2006: JP2006-165529 (290 worldwide citation)

PROBLEM TO BE SOLVED: To provide a new amorphous oxide applicable to an active layer of a TFT or the like.SOLUTION: An amorphous oxide is characterized in that it comprises microcrystals, that its composition changes in a layer thickness direction, or that it contains a predetermined material.


6
Osada Yoshiyuki, Hosono Hideo, Kamiya Toshio, Nomura Kenji: Field effect transistor. Canon, Tokyo Institute Of Technology, June 22, 2006: JP2006-165527 (159 worldwide citation)

PROBLEM TO BE SOLVED: To provide a novel transistor relating to a field effect transistor.SOLUTION: The transistor is provided with a source electrode 708, a drain electrode 709, a gate electrode 712 and an active layer that includes an amorphous oxide having an electron carrier concentration less t ...


7
Nathan Arokia, Chaji Gholamreza Reza, Servati Peyman: Method and system for programming, calibrating and driving a light emitting device display. Ignis Innovation, Nathan Arokia, Chaji Gholamreza Reza, Servati Peyman, HARRIS John D, June 22, 2006: WO/2006/063448 (156 worldwide citation)

A method and system for programming, calibrating and driving a light emitting device display is provided. The system may include extracting a time dependent parameter of a pixel for calibration.


8
Abe Katsumi, Hosono Hideo, Kamiya Toshio, Nomura Kenji: Semiconductor device utilizing amorphous oxide. Canon, Tokyo Institute Of Technology, June 22, 2006: JP2006-165532 (142 worldwide citation)

PROBLEM TO BE SOLVED: To provide a semiconductor device and a circuit utilizing a transparent oxide film.SOLUTION: A semiconductor device comprises a P-type region and an N-type region. For the N-type region, an amorphous oxide having an electron carrier concentration of less than 1018/cm3 or an amo ...


9
Sugiura Toshihiro, Takeda Seiso, Takahashi Junichi: Antenna system for emc test, test signal generation apparatus and transmission apparatus. Maspro Denkoh, June 22, 2006: JP2006-166399 (138 worldwide citation)

PROBLEM TO BE SOLVED: To properly irradiate an object to be tested with electric waves for test, without increasing costs, in a transmission apparatus used for an EMC test (in particular for an immunity test).SOLUTION: The transmission apparatus comprises a horn antenna 20 and a dielectric lens 30 f ...


10
Döllinger Horst: (De) Implantat zur behandlung der lumbalen spinalkanalstenose, (En) Implant for the treatment of lumbar spinal canal stenosis. Döllinger Horst, FELDMANN P Clarence, June 22, 2006: WO/2006/064356 (116 worldwide citation)

(EN) Disclosed is an implant (201) for treating lumbar spinal canal stenosis, comprising a spacer (210) that is provided with an elongate interior space (211) into which an insert part (241) can be inserted. A first retaining element (210) is fixed in the spacer (210) in the inserted state. Said fir ...