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Jennifer Petoff Brian Goodall
Brian Leslie Goodall, Jennifer Lynn Petoff, Han Shen: Catalytic composition and its preparation and use for preparing polymers from ethylenically unsaturated monomers. Rohm And Haas Company, December 15, 2005: US20050277749-A1

A catalytic composition, including a cationic metal-pair complex, is disclosed, along with a method for its preparation. A method for the polymerization of ethylenically unsaturated monomers using the catalytic composition, and the addition polymers produced thereby are also disclosed.


2
Jennifer Petoff Brian Goodall
Brian Lesllie Goodall, Jennifer Lynn Petoff, Han Shen: Catalytic composition and its preparation and use for preparing polymers from ethylenically unsaturated monomers. Rohm And Haas Company, December 15, 2005: US20050277569-A1

A catalytic composition, including a cationic metal-pair complex, is disclosed, along with a method for its preparation. A method for the polymerization of ethylenically unsaturated monomers using the catalytic composition, and the addition polymers produced thereby are also disclosed.


3
Belgacem Haba Belgacem (Bel) Haba
Yoichi Kubota, Teck Gyu Kang, Jae M Park, Belgacem Haba: Components with posts and pads. Tessera, Tessera, LERNER DAVID et al, December 29, 2005: US20050284658-A1

A packaged microelectronic element includes connection component incorporating a dielectric layer (22) carrying traces (58) remote from an outer surface (26), posts (48) extending from the traces and projecting beyond the outer surface of the dielectric, and pads (30) exposed at the outer surface of ...


4
Belgacem Haba Belgacem (Bel) Haba
Belgacem Haba, Masud Beroz, Teck Gyu Kang, Yoichi Kubota, Sridhar Krishnan, John B Riley, Ilyas Mohammed: Microelectronic packages and methods therefor. Tessera, Tessera, LERNER DAVID et al, December 29, 2005: US20050285246-A1

A microelectronic package includes a microelectronic element having faces, contacts and an outer perimeter, and a flexible substrate overlying and spaced from a first face of the microelectronic element, an outer region of the flexible substrate extending beyond the outer perimeter of the microelect ...


5
Dr Raj C Thiagarajan ATOA Scientific Technologies
Tansen Dhananjay Chaudhari, Chinniah Thiagarajan, Poovanna Kushalappa Theethira, Stephen Shuler, Eric Jon Jaarda: Energy absorbing articles. General Electric Company, General Electric Company, C O Fletcher Yoder, December 29, 2005: US20050287371-A1

An article comprises a plurality of auxetic structures wherein the auxetic structures are of size greater than about 1 mm. The article also comprises at least one cell boundary that is structurally coupled to the auxetic structures. The cell boundary is configured to resist a deformation of the auxe ...


6
Katherina Babich
Marie Angelopoulos, Katherina Babich, S Jay Chey, Michael Straight Hibbs, Robert N Lang, Arpan Pravin Mahorowala, Kenneth Christopher Racette: Attenuated embedded phase shift photomask blanks. International Business Machines Corporation, Scully Scott Murphy & Presser, Daniel P Morris Esq, December 27, 2005: US06979518

An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of ...


7
Belgacem Haba Belgacem (Bel) Haba
Teck Gyu Kang, Michael Estrella, Jae M Park, Kenneth Robert Thompson, Craig S Mitchell, Belgacem Haba: Image sensor package and fabrication method. Tessera, LERNER DAVID et al, Tessera, December 22, 2005: US20050279916-A1

An image sensor package is disclosed that reduces the overall size of known image sensor packages. The image sensor package includes an image sensor and image sensor controller that are arranged on a substrate so that the surfaces of the image sensor and image sensor controller are directly adjacent ...


8
Xavier Baie
Doris Bruce B, Chidambarrao Dureseti, Baie Xavier, Mandelman Jack A, Sadana Devendra K: Field effect transistor with stressed channel and method for making same. International Business Machines Corporation, December 21, 2005: TWI246180

Field effect transistor with increased charge carrier mobility due to stress in the current channel 22. The stress is in the direction of current flow (longitudinal). In PFET devices, the stress is compressive; in NFET devices, the stress is tensile. The stress is created by a compressive film 34 in ...


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