1
Craig Allen
Rodolfo Ernesto Kilian, Allen Craig Todd: Two phase anaerobic organic matter treatment and system. Dennis W Beech, July 26, 2005: US06921485 (8 worldwide citation)

The process and system may have an organic matter influent introduced into an acid reactor. The acid reactor may be maintained under conditions to facilitate creation of volatile acids in a fluid having water and suspended solids forming a sludge effluent. The sludge effluent may be communicated to ...


2
Belgacem Haba Belgacem (Bel) Haba
John W Smith, Belgacem Haba: Semiconductor chip package with interconnect structure. Tessera, Lerner David Littenberg Krumholz & Mentlik, July 26, 2005: US06921713 (2 worldwide citation)

An active microelectronic element such as a semiconductor chip or wafer is bonded to an interconnect element having substantially the same coefficient of thermal expansion as the active element using small, rigid bonds, desirably made by a solid-phase bonding technique, which accommodate numerous cl ...


3
Eugene Fitzgerald
Zhi Yuan Cheng, Eugene A Fitzgerald, Dimitri A Antoniadis, Judy L Hoyt: Process for producing semiconductor article using graded epitaxial growth. Massachusetts Institute of Technology, Goodwin Procter, July 26, 2005: US06921914 (31 worldwide citation)

A process for producing monocrystalline semiconductor layers. In an exemplary embodiment, a graded Si1-xGex (x increases from 0 to y) is deposited on a first silicon substrate, followed by deposition of a relaxed Si1-yGey layer, a thin strained Si1-zGez layer and another relaxed Si1-yGey layer. Hydr ...


4
Maged Beshai
Maged E Beshai, Alan Frank Graves: Fast optical switch. Nortel Networks, Withrow & Terranova PLLC, July 26, 2005: US06922501 (2 worldwide citation)

A fast optical switch is needed to realize an economical and scaleable optical-core network. In the disclosed optical switch, switching is effected by rapid wavelength conversion. Either channel switching, Time Division Multiplex (TDM) switching or both may be provided by the fast optical switch. Th ...


5
Jonathan A Eppstein, Mark A Samuels, Michael R Hatch: Integrated poration, harvesting and analysis device, and method therefor. SpectRx, Altea Therapeutics Corporation, Altera Law Group, July 26, 2005: US06922578 (268 worldwide citation)

An integrated device for poration of biological tissue, harvesting a biological fluid from the tissue, and analysis of the biological fluid. The device comprises a tissue-contacting layer having an electrically or optically heated probe to heat and conduct heat to the tissue to form at least one ope ...


6
Rajiv V Joshi, Richard Q Williams: FET channel having a strained lattice structure along multiple surfaces. International Business Machines Corporation, Satheesh K Karra Esq, Harrington & Smith, July 26, 2005: US06921982 (220 worldwide citation)

A channel 16 of a FinFET 10 has a channel core 24 and a channel envelope 32, each made from a semiconductor material defining a different lattice structure to exploit strained silicon properties. A gate is coupled to the channel envelope through a gate dielectric. Exemplary materials are Si and SixG ...


7
Andrew H Cragg, Robert L Assell, Eugene A Dickhudt: Method and apparatus for spinal distraction and fusion. TranS1, Knobbe Martens Olson & Bear, July 26, 2005: US06921403 (220 worldwide citation)

The invention provides an implantable spinal distraction/fusion rod with varied thread pitch and diameters along different portions of its length that it is capable of distracting two or more vertebral bodies relative to each other and/or facilitating the procedure of fusing the vertebral bodies tog ...


8
Andre P Bessette, James L Pacek: Methods and apparatus for skin treatment. Arthrocare Corporation, John T Raffle, Richard R Batt, July 26, 2005: US06920883 (219 worldwide citation)

Methods and apparatus for electrosurgically treating human skin. The skin may be treated by applying thermal energy to the dermis to shrink the skin following liposuction, or to induce collagen deposition at the site of a wrinkle for wrinkle reduction or removal. In another embodiment, a method invo ...


9
Zoran Krivokapic, Judy Xilin An, Srikanteswara Dakshina Murthy, Haihong Wang, Bin Yu: Narrow fin FinFET. Advanced Micro Devices, Harrity & Snyder, July 26, 2005: US06921963 (212 worldwide citation)

A narrow channel FinFET is described herein with a narrow channel width. A protective layer may be formed over the narrow channel, the protective layer being wider than the narrow channel.


10
Kie Y Ahn, Leonard Forbes: Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics. Micron Technology, Schwegman Lundberg Woessner & Kluth P A, July 26, 2005: US06921702 (209 worldwide citation)

A dielectric film containing HfO2/ZrO2 nanolaminates and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A gate dielectric is formed by atomic layer deposition of HfO2 using a HfI4 precursor fo ...



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